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    TRANSISTOR BS 170 Search Results

    TRANSISTOR BS 170 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F573FM/B
    Rochester Electronics LLC 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, PDF Buy

    TRANSISTOR BS 170 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • V^GS th = 0.8.2.0V Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 Ordering Code Q67000-S076 %S(on) 5Û Pin 3 G Package Marking TO-92 BS 170 D


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    Q67000-S076 PDF

    bs 170

    Abstract: BS 050 transistor Q67000-S076
    Contextual Info: BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information


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    Q67000-S076 E6288 bs 170 BS 050 transistor Q67000-S076 PDF

    Q67000-S076

    Abstract: BS 050 transistor transistor BS 170
    Contextual Info: BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information


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    Q67000-S076 E6288 Q67000-S076 BS 050 transistor transistor BS 170 PDF

    BLV38

    Abstract: 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179
    Contextual Info: PHILIPS INTERNATIONAL bS E D • 711GÔ5ti DDt.2R2R Jl 557 ■ BLV38 VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use In linear V H F television transmitters vision o r sound amplifiers .


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    711Gfl5ti BLV38 711002t. 0b2c13fl BLV38 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179 PDF

    2SK774

    Contextual Info: 6427525 N E C ELECTRONICS as SaSyir.";- FEATU RES 98D 18925 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ~Tfi D ESCRIPTIO N INC D E | b457S2S OQlfl^BS fl 2SK774 The 2SK774 is N-channel MOS Field Effect Power Transistor designed for switching power supplies OC-OC converter.


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    2SK774 PDF

    BUK427-400A

    Abstract: 100-P BUK427-400B lD25-c RI LGR
    Contextual Info: N AMER btiS3'i31 □□202 bS SSE D P H I L I P S / D I SC RE T E 4 PowerMOS transistor BUK427-400A BUK427-400B • GENERAL DESCRIPTION SYMBOL CO Û > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


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    BUK427-400A BUK427-400B BUK427 -400A -400B 100-P BUK427-400B lD25-c RI LGR PDF

    BS170

    Contextual Info: SIEMENS SIPMOS Small-Signal Transistor BS 170 VDS = 60 V / o = 0 .3 A ^DS on = 5.0 Q -4.2- • N channel • Enhancement mode • Package: TO-92 a 1) 1.6 0.4 GPT05573 taped version Type Ordering code for version on tape Ordering code for version in bulk


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    Q67000-S076 Q67000-S285 Q67000-S061 GQ54112 E35bOS BS170 PDF

    VPT05155

    Abstract: buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051
    Contextual Info: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vds 600 V 10 ^bS on Package Ordering Code 4.5 A 1.6Í2 TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


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    VPT05155 O-220 C67078-S1321-A2 VPT05155 buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051 PDF

    Contextual Info: Motor driver ICs 3-phase motor driver BA6871BS The BA6871 BS is a 3-phase, full-wave, pseudo-linear motor driver suited for VCR capstan motors. The IC has a torque ripple cancellation circuit to reduce wow and flutter, and an output transistor saturation prevention circuit that


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    BA6871BS BA6871 PDF

    resistor MR25 philips

    Abstract: resistor MR25 philips MR25 MR25 resistor MR25 philips Metal film resistor MF led MR25 MR25 DGB27 transistor nf
    Contextual Info: PHILIPS INTERNATIONAL bS E D □0LE713 711Dö2b 0 2 ö I IPHIN BLU20/12 U.H.F. POWER TRANSÌSTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile


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    711D02b 0LE713 BLU20/12 OT-119) 711002b 0b2720 resistor MR25 philips resistor MR25 philips MR25 MR25 resistor MR25 philips Metal film resistor MF led MR25 MR25 DGB27 transistor nf PDF

    ecn 3-Phase Motor Driver IC

    Abstract: BA6871 BA6871BS SDIP32 motor breaker gv2
    Contextual Info: Motor driver ICs 3-phase motor driver BA6871BS The BA6871 BS is a 3-phase, full-w ave, p se u d o -lin e a r m o to r driver suite d for VCR cap stan m otors. The IC has a torque ripple cancellation circuit to reduce w ow and flutter, and an output transistor saturation prevention circuit that


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    BA6871BS BA6871BS ecn 3-Phase Motor Driver IC BA6871 SDIP32 motor breaker gv2 PDF

    Contextual Info: 1989963 CENTRAL SEM C O N D U C T O R _ 6 1 C 0 0 2 3 0 - r - 2 9 ' 3 1 ti graf&Gsfl gSfiîB6e©Bi^5SÊ@P @@51-3. de I n t m b B • 00DDE3D b GES6014 GES6016 C@BS€?CSl g©DlliS@HÖö£tOP Corp. Central sem iconductor Corp. NPN SILICON TRANSISTOR


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    00DDE3D GES6014 GES6016 GES6014, GES6016 GES6015, GES6017 CBR10Series, CBR25Ser/es PDF

    DIN 32676

    Abstract: CLASS 2500 VALVE PRESSURE CHART transistor sms asme transistor D 322 DIN 43650 form a P122D din 64 pin ribbon type c RG2 -relay valve B16-5-1988
    Contextual Info: 8032 INLINE Flow Switch with On/Off indicator • DN 5/16“ to 2“ orifice • Local indicator • Adjustable switching contact transistor or relay • Adjustable hysterisis and delay time Type 8032 can be combined with. Type S030 Fitting Type 6013 Type 6213


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    PDF

    LR 120N

    Abstract: M62260FP avr qt 6ka transistor
    Contextual Info: MITSUBISHI Dig./Ana. INTERFACE M62260FP CS / BS CONVERTER DRIVER IC DESCRIPTION PIN CONFIGURATION (TOP VIEW) M62260FP is developed to be a 2-channel HEMT driver. Capable of simplifying the peripheral circuits, this 1C permits com­ pact unitized design.


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    M62260FP M62260FP LR 120N avr qt 6ka transistor PDF

    p421 coupler

    Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
    Contextual Info: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety


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    TLP227GA TLP227G TLP227GA TLP227G/TLP597GA/TLP227GA-2 p421 coupler MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note PDF

    Helitrim

    Abstract: lm1201 Helitrim 55 1500 watt audio amplifier circuit diagram
    Contextual Info: LM1201 LM1201 Video Amplifier System Literature Number: SNVS010A LM1201 Video Amplifier System Y The LM1201 is a wideband video amplifier system intended for high resolution monochrome or RGB monitor applications In addition to the wideband video amplifier the


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    LM1201 LM1201 SNVS010A LM1203 Helitrim Helitrim 55 1500 watt audio amplifier circuit diagram PDF

    BUK457-500B

    Abstract: GK 74 transistor
    Contextual Info: bSE D m PHILIPS INTERNATIONAL 7110fl2b D D b m 4 1 361 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. The device is intended for use In


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    711DfiSb 0Db4142 BUK457-500B -T0220AB BUK457-500B GK 74 transistor PDF

    telephone circuit with dtmf tp5088

    Abstract: TP5088 DEUTSCH 941 D DEUTSCH+941+D TP5088N
    Contextual Info: TP5088 TP5088 DTMF Generator for Binary Data Literature Number: SNOSBC2A TP5088 DTMF Generator for Binary Data General Description Features This CMOS device provides low cost tone-dialing capability in microprocessor-controlled telephone applications 4-bit


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    TP5088 TP5088 telephone circuit with dtmf tp5088 DEUTSCH 941 D DEUTSCH+941+D TP5088N PDF

    ZVN4206E

    Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
    Contextual Info: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA


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    OT-23 ZVN3320F BSS123 ZVN3310F ZVN4106F ZVN3306F 2N7002 VN10LF BS170F BSS138+ ZVN4206E bss123 marking sa B55123 BSS138 PDF

    Contextual Info: 0Q247fll D5b B A P X Philips Semiconductors N AUER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION Product specification b?E ]> S BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with double emitter bonding.


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    0Q247fll BFG17A OT143. PDF

    Contextual Info: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz


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    STC06IE170HV STC06IE170HV O247-4L PDF

    BFP96

    Abstract: BFP96 P6 BFQ32C OA74 Philips MBB UBB824 1462, TRANSISTOR MB8627 transistor 1548
    Contextual Info: Philips Semiconductors bbSB'ÎBl D D3 14Û 5 1ÔS M A P X Product specification NFN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE ]> PINNING NPN transistor in hermetically sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes.


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    BFP96 OT173 OT173X BFQ32C. BFP96 BFP96 P6 BFQ32C OA74 Philips MBB UBB824 1462, TRANSISTOR MB8627 transistor 1548 PDF

    "Sanken power transistor"

    Contextual Info: NR130 SERIES APPLICATION NOTE Rev.1.2 NR130 Series Application Note Rev.1.2 The contents in this application note are preliminary, and are subject to changes without notice. preliminary SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp Copy Right: SANKEN ELECTRIC CO., LTD.


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    NR130 "Sanken power transistor" PDF

    MOTOROLA ELECTROLYTIC CAPACITOR

    Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear am plifier applications in industrial and com m ercial FM/AM


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    MRF15090/D MOTOROLA ELECTROLYTIC CAPACITOR PDF