TRANSISTOR BJT HIGH CURRENT Search Results

transistor 2sc5353

Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Contextual Info: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000

Contextual Info: A Product Line of Diodes Incorporated FMMT560Q 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 

Contextual Info: A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features

Contextual Info: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. •

Contextual Info: A Product Line of Diodes Incorporated FMMT459Q 500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Feature 

9435R

Abstract: NSB9435T1
Contextual Info: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS

Contextual Info: MJD32CQ 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features           

transistor bd 370

Contextual Info: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS

9435R

Abstract: transistor BD 240
Contextual Info: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS

Contextual Info: MJD31CQ 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features           

9435R

Abstract: NSB9435T1 NSB9435T1G power BJT PNP
Contextual Info: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com • Collector −Emitter Sustaining Voltage − POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc

Contextual Info: BCX5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features     BVCEO > 80V Ic = 1A High Continuous Collector Current

Transistor BJT 547 b

Abstract: 120E2 BJT 12 NUS5531MTR2G NUS5531MT
Contextual Info: NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce sat Transistor, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and

NUS5531MT

Contextual Info: NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce sat Transistor, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and

power bjt transistor 600v

Abstract: fuji bjt 50D-050A transistor and schematic symbols Transistor BJT 100A 2D TRANSISTOR 50d-050 M208 bjt transistor 600v 2pack transistor module 50a 600V
Contextual Info: FUJI 2DI 50D-050A M U M Ë ïïr a iÊ /< 2-Pack BJT 600 V 50 A 7— \ s7 'S *S 7 & :& > n .— V POWER TRANSISTOR MODULE Features • High Current • h F E ^ g i' High DC Current Gain •mm Insulated Type A pplicatio ns • High Power Switching • ftE fM n X X fll Uninterruptible Power Supply

BJT with V-I characteristics

Abstract: bjt 100a power bjt transistor 600v 1100D-050 bjt 100a 600v KRT 30 BJT 600V BJT IC Vce
Contextual Info: 2-Pack BJT 2 D I 100D-050 ‘ SSX ✓ n° 7 - POWER TRANSISTOR MODULE • # 5 : Features • 7 1} — 5fc-f K rti >$¥<4 • hF E ^iS *,' Including Free W heeling Diode High DC Current Gain Insulated Type ' Applications • "jJ- H i g H Power S witching

transistor 1249

Abstract: UPA800T 1788
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800T UPA800T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 Parameters Q1, Q2 IS BF 3.84e-16 MJC 0.5 124.9 XCJC NF 1.04 CJS VAF 11.87 VJS 0.75 IKF 0.027 MJS ISE 1e-14 FC 0.5 10e-12 NE 2.17 TF BR

KF 35 transistor

Abstract: power bjt transistor 600v 690 lc b20 diode two transistors IEBo-400mA fblu 3A500
Contextual Info: 2-Pack BJT 600 V e o,v 150 A 2D11500-050 ^ L /l I l $ 1 O u t l i n e Drawings POWER TRANSISTOR MODULE • # 4 : Features m y \ —Tfrj i) • hFE*v'iS t' • : t — K rt/K Including Free Wheeling Diode High DC Current Gain Insulated Type I Applications

power bjt transistor 600v

Abstract: 6DI20C-050 bjt transistor 600v transistor 104 VCBo-600V fuji bjt fuji bjt 6-pack
Contextual Info: FU JI 6-Pack BJT 600 V 20 A 6DI20C-050 MUM STOSOÊ : Outline Drawings POWER TRANSISTOR MODULE : Features y > 9 ¥ 4 1 — Ff tM • 7 U— • h F E ^ 'iiji' • Including Free Wheeling Diode High DC Current Gain Insulated Type ' A pplica tio ns • DC * —9 U'M

Drive Base BJT

Abstract: Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576
Contextual Info: Testing Key Parameters of High Voltage BJTs for RDFC Applications Application Note AN-2576 INTRODUCTION Certain primary switch BJT parameters are particularly important for correct operation and longterm reliability of RDFC designs. : • Current gain hFE

PWM Controller For BJT

Abstract: power transistor bjt 1000 a transistor marking CS
Contextual Info: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the

Contextual Info: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the

710 opto coupler

Abstract: 3720M-G1 power BJT 710 opto COUNTER LED bcd transistor marking CS bjt specifications Transistor BJT High Current AP3720 bjt high voltage
Contextual Info: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the

SMD Transistor dj rm

Abstract: complementary bipolar transistor driver schematic Z-Power P7 TRANSISTOR SMD mosfet driver cree mc-e driver TRANSISTOR SMD mosfet power 882 smd ZXLD1320 SMD Transistor dj diode smd ed 49
Contextual Info: A Product Line of Diodes Incorporated DN95 2.8A high current LED driving using ZXLD1320 with external power switch Ray Liu, Applications engineer, Diodes Incorporated Introduction In the past decade, solid state lighting devices have gained popularity. High brightness LEDs are