TRANSISTOR BDX34 65 Search Results

BDX34C

Abstract: BDX34 BDX34B BDX34A transistor bdx34c transistor BDX34 65
Contextual Info: BDX34/A/B/C PNP EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD X33/33A/33B/33C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector Base : BDX34

BDX34C

Abstract: BDX34 BDX34A BDX34B
Contextual Info: BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

BDX34C

Contextual Info: BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

transistor bdx54

Abstract: BDX34 BDX34BTU
Contextual Info: BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

BDX34C

Abstract: BDX34A BDX33 BDX33A BDX33B BDX33C BDX33D BDX34 BDX34B BDX34D
Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D Transistor de puissance PNP darlington Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Transistor complémentaire conçut pour être utilisé avec BDX33, BDX33A, BDX33B, BDX33C and

DX34C

Abstract: DX34
Contextual Info: BDX34/A/B/C PNP EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BDX33/33A/33B/33C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base : B DX34 BDX34A BDX34B

Contextual Info: BDX33/A/B/C NPN EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINER AND SWITCHING APPLICATIONS • Complement to BDX34/34A/34B/34C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector Base Voltage : BDX33

transistor BDX34 65

Abstract: bdx33
Contextual Info: BDX33/A/B/C NPN EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BDX34/34A/34B/34C respectively TO -220 ABSOLUTE MAXIMUM RATINGS Symbol Characteristic C ollecto r Base Voltage

bdx33

Abstract: bdx33c BDX33B power transistor Ic 4A NPN to - 251 BDX33A bdx34
Contextual Info: BDX33/A/B/C NPN EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINER AND SWITCHING APPLICATIONS • Complement to BDX34/34A/34B/34C respectively ABSOLUTE MAXIMUM RATINGS VcEO lc lc Ib Pc Tj T stg ELECTRICAL CHARACTERISTICS

Contextual Info: BDX34/A/B/C PNP EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD X33/33A/33B/33C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Sym bol Rating

BDX34C

Abstract: BDX34A
Contextual Info: BDX34/A/B/C PNP EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • Complement to B DX33/33A/33B/33C respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollecto r Base Voltage C ollecto r E m itter Voltage

BDX33

Abstract: BDX33A BDX33B BDX33C
Contextual Info: BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

bdx33

Contextual Info: BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

BDX33 application notes

Abstract: bdx33c bdx33
Contextual Info: BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D • 70 W at 25°C Case Temperature

BDX33

Abstract: BDX34C BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B T-801 k 30 transistor
Contextual Info: E lMOSPEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN PNP BDX33 BDX33A BDX33B BDX33C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Coliector-Emitter Sustaining VoltageVcEopus, = 45 V Min - BDX33.BDX34

bdx34

Abstract: BDX34A
Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

BDX34C

Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

BDX33

Abstract: BDX33A BDX33B BDX33C BDX33D BDX34 BDX34A BDX34B BDX34C BDX34D
Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature

BDX34C

Abstract: BOX34 BDX34B transistor BDX34 65 AIR LB 8DX34A
Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SIUCON POWER DARLINGTONS Copyright 1997. Power Innovations Limited, UK_ • AUGUST 1983 - REVISED MARCH 1907 Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D • 70 W at 25°C Case Temperature

Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

BDX34

Abstract: BDX34B BDX34C BDX33 BDX33A BDX33B BDX33C BDX33D BDX34A BDX34D
Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

RCA 40872

Abstract: RCA 40636 transistor rca 40872 transistor 40872 transistor NPN Transistor 2N3055 darlington RCA 40595 transistor 40872 rca rca 40636 rca8203a 40636
Contextual Info: M O N O LITH IC D A R LIN G TO N T Y P E S H E R M E T IC lc • 8 A max. P j - 3 6 W max. TO-66 138 x 136 lc > 8 A max. P f “ 90 W max. (TO-31 136 x 136 P L A S T IC lt z 8 A max. Py 100 W max. (TO-3) lc * 10 A max. P y ■ 100 W max. (TO-3) lc •= - 1 0 A max.

r3673

Abstract: Y1031 TIC106D Thyristor r3673 Philippines R3672 TIP43 BD657 transistor bf65 BF65-S transistor bf64
Contextual Info: CIRCUIT PROTECTION PRODUCTS February, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team TO-220 Packaged Transistor, Thyristor & Overvoltage Protection Product Change Notification