TRANSISTOR BD 540 Search Results

Contextual Info: y i / i y j x i y n -48V to +5V Output Switching DC-DC Converter _ G eneral Description _ Features The MAX650 is a low -pow er fixed +5V output switching DC-DC converter designed for operation from very high negative input voltages. All control functions and a 140V,

transistor BU 5027

Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im

bc 540

Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0

transistor BD 540

Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
Contextual Info: 6 0 9 y e a MICRO ELECTRONICS CORF D E | b [ m 7 f i a DOGObS? D | 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches

BD 140 transistor

Abstract: MMJT9435 MOTOROLA TRANSISTOR motorola bjt
Contextual Info: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA MMJT9435 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc

BD 140 transistor

Abstract: BD NPN transistors BJT IC Vce BJT npn motorola MOTOROLA TRANSISTOR MMJT9410
Contextual Info: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA MMJT9410 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device NPN Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc

transistor bd 370

Abstract: transistor BD 110
Contextual Info: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9435 PNP Silicon • Collector -Emitter Sustaining Voltage — VcEOisusI = 30 Vdc Min @ Iq = 10 mAdc • High DC Current Gain — hpE = 125 (Min) @ lc = 0.8Adc

transistor bd 370

Contextual Info: MOTOROLA Order this document by MMJT94I0/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9410 NPN Silicon • Collector -Emitter Sustaining Voltage — V q e o s u s = 30 Vdc (Min) @ lc = 10 mAdc • High DC Current Gain — hpE = 85 (Min) @ lc = 0.8 Adc

Contextual Info: Part Number: Integra IB2729M5 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor part number IB2729M5 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class C

MMFT2N25E

Abstract: 735 motorola make
Contextual Info: MOTOROLA Order this document by MMFT2N25E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT2N25E TMOS E-FET High Energy Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently.

BJT npn motorola

Abstract: transistor bd 370 power transistor bd JT9410 motorola bjt
Contextual Info: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA M M Ü T9410 Preliminary Data Sheet B ipolar Pow er Transistors Motorola Preferred Device NPN Silicon • Collector -Emitter Sustaining Voltage — VcEO sus = 30 Vdc (Min) @ Iq = 10 mAdc

MMJT9435

Contextual Info: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9435 PNP Silicon Motorola Preferred Device • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE

MMJT9410

Contextual Info: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9410 NPN Silicon Motorola Preferred Device • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE

lb 156

Contextual Info: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors M M JT9435 PNP Silicon • Collector -E m itte r Sustaining Voltage — V cEO isus^ = 30 Vdc Min @ Iq = 10 mAdc • High DC Current Gain — hpE = 125 (Min) @ lc = 0.8 Adc

Contextual Info: MOTOROLA Order this document by MMFT2N25E/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E-FET High Energy Pow er FET N-Channel Enhancement-Mode Silicon Gate T h is a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to withstand high energy in the avalanche mode and switch efficiently.

Contextual Info: MOTOROLA Order this document by MMFT2N25E/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E-FET High Energy Power FET M MFT2N25E N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to withstand high energy in the avalanche mode and switch efficiently.

HN1V01H

Contextual Info: HN1V01H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN 1V 01H Unit in mm AM RADIO BAND TUNING APPLICATIONS. + 0.3 4.5 - 0.2 High Capacitance Ratio :CIV /C8V = 19.5 Typ. High Q :Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)

Contextual Info: HN2V02H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. s MAXIMUM RATINGS Ta = 25°C (D1# D2, D3) SYMBOL VR Tj T stg RATING 16 125 -5 5 -1 2 5 UNIT V °C °C À i o I O 1. ANODE 1 5. CATHODE 3

H123

Abstract: MARKING D3 8pin HN2V02H
Contextual Info: HN2V02H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : CIV /C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Three Devices in FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation : V r = 1—8V

Contextual Info: TOSHIBA HN1V01H SILICON EPITAXIAL PLANAR TYPE HN1V 01 H Unit in mm A M RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio :CIV /C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Four Devicesin FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation :

Contextual Info: TOSHIBA HN1V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V 02 H Unit in mm A M RADIO BAND TUNING APPLICATIONS. M A X IM U M RATINGS Ta = 25°C (D 1# D2) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range 1 SYMBOL VR

D 5038 Transistor Horizontal

Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Contextual Info: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

HN1V02H

Contextual Info: TOSHIBA HN1V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN 1V 02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range 1 1 SYMBOL VR Tj T stg RATING 16 125 -5 5 -1 2 5 UNIT V