TRANSISTOR BC QE Search Results

TRANSISTOR C 369

Abstract: transistor cb 369 transistor BC 368 TRANSISTOR bC 369 BC368 BC369 2586 TRANSISTOR 2586
Contextual Info: BC 368 Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Kom plem entäre NF-Treiber- und Endstufen m it n ie driger Betriebsspannung. Kom plem entärtype zu BC 369 Applications: C om plem entary audio amplifier, d river and o utput stages fo r lo w su p p ly voltage.

Contextual Info: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

LB 122 transistor To-92

Abstract: BC368 BG368 B-G368 Philips 119 Silicon Epitaxial Planar Transistor philips
Contextual Info: b'iE D • 1^53=131 □DB7S3b TIE I IAPX BC368 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92envelope, intended for low-voltage, high current L F applications. BC368/BC 369 is the matched complementary pair suitable fo r class-B audio output stages up to 3 W.

Contextual Info: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

5b1 transistor

Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type

Contextual Info: 2 S B 1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1188; BC-*, where ★ is hFE code • • • 2SB1188 (MPT3) c -0.1 *0'2 4.5 1. 6 collector power dissipation, Pc = 2 W,

Transistor BC 227

Contextual Info: PD-9.1620 International I R Rectifier IRG4 BC 2 0 K-S prelim inary Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =1 Ops, @360V VCE start , T j = 125°C, V ge = 15V

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

transistor BC 549

Abstract: transistor BC 550 TRANSISTOR BC 550 c TRANSISTOR BC 550 b TFK BC BC549 BC550 TRANSISTOR BC 135 BE550 TRANSISTOR BC 620
Contextual Info: BC 549 - BC 550 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Rauscharme V orstufen Application: Low noise prestages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

bi 370 transistor

Abstract: bi 370 transistor e transistor 010C semiconductors bi 370 transistor BI 370 BFE520 NPN power transistor spice transistor MJE -1103 mixer 5pin package bi+370+transistor
Contextual Info: Product specification Philips Semiconductors NPN wideband differential transistor BFE520 PINNING - SOT353B FEATURES • Small size • High power gain at low bias current and voltage • Temperature matched • Balanced configuration • hpE matched • Continues to operate at V qe < 1 V.

Contextual Info: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M ark in g P A C K A G E O U T L IN E D E T A IL S BC807 = 5D A L L D IM E N S IO N S IN m m B C 8 0 7 -1 6 - 5A B C 807-25 * 5B BC807-40 = 5C 3.0 BCB08 - 5H 2.8 0.48 B C 808-16 - 5E B C 808-25 = 5F

ALG TRANSISTOR

Contextual Info: bbSB'lBl Q024547 02b * A P X N AflER PHILIPS/DISCRETE b7E D _ J BCV62; 62A BCV62B; 62C V SILICON PLANAR EPITAXIAL TRANSISTOR Double p-n-p transistor, in SOT-143 plastic envelope, designed for use in applications where the working p oint must be independent o f temperature.

Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Unit Pc 32 32 5 100 350 Tstg 15 0 V V V mA mW °C Symbol Collector-Base Voltage Collector-Emitter Voltage VcBO Emitter-Base Voltage

1000HA

Abstract: NE5517 dolby true HD circuit lm13600 application notes NE5517N operational transconductance amplifier LM13600 NS high end amplifier schematics LM13600 NE5517A
Contextual Info: Product specification Philips. Semiconductor# Linear Products N E 5 5 1 7 /5 5 1 7 A Dual operational transconductance amplifier PIN CONFIGURATION DESCRIPTION N, D Packages The NE5517 contains tw o current-controlled transconductance amplifiers, each with a differential Input and push-pull output. The

Contextual Info: bb53=l31 QQ34525 4bS « A P X N AMER PHILIPS/DISCRETE BCP68 b7E T> y v SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature plastic envelope intended for low-voltage, high-current LF applications. QUICK REFERENCE DATA Collector-emitter voltage VgE = 0

D 1062 transistor

Abstract: BFE505 transistor k 2847 transistor 1234 npn TRansistor L 701 Dual RF transistor dual transistor O2
Contextual Info: Philips Semiconductors Product specification NPN wideband differential transistor FEATURES BFE505 PINNING - SOT353B • Small size SYMBOL PIN • High power gain at low bias current and voltage DESCRIPTION bi 1 base 1 • Temperature matched e 2 emitter • Balanced configuration

BCV65

Abstract: BCV65B SOT143B pnp matched pair
Contextual Info: Philips Semiconductors Product specification NPN/PNP general purpose transistors BCV65; BCV65B PINNING FEATURES • Low current max. 100 mA PIN • Low voltage (max. 30 V). 1 ,3 APPLICATIONS DESCRIPTION co lle cto r 2 com m on base 4 com m on em itter • G eneral purpose sw itching and am plification.

Contextual Info: LTE4002S Maintenance type - not for new designs J _ MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emi ter class-A linear amplifiers up :o 4 GHz. Diffused em itter ballasting resistors, self aligni d process entirely ion implantec end gold sandwich

transistor MJE -1103

Abstract: sot353b BFE520 transistor 2201 D 1414 transistor npn dual emitter RF Transistor NPN power transistor spice
Contextual Info: Product specification Philips Semiconductors NPN wideband differential transistor BFE520 PINNING - SOT353B FEATURES • Small size PIN SYMBOL • High power gain at low bias current and voltage DESCRIPTION bi 1 base 1 • Temperature matched e 2 emitter • Balanced configuration

MRC031

Abstract: MRC051 BFS25A
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low curren t consum ption PIN • Low noise figure DESCRIPTION C ode: N6 • Gold m etallization ensures e xcellent reliability • S O T 323 envelope. 3

Operational Transconductance Amplifier

Contextual Info: Product specification Philips Semiconductors Linear Products Dual operational transconductance amplifier NE5517/5517A PIN CONFIGURATION DESCRIPTION The N E 5517 contains tw o current-controlled transconductance am plifiers, each w ith a differential input and push-pull output. The

MRC021

Abstract: BFS520 BFS520F
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS520 • High transition frequency It is intended for w ideband applications such as satellite TV tuners, ce llu la r phones, cordless phones, pagers etc., w ith signal frequencies up to 2 GHz.

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T