TRANSISTOR BC 650 C Search Results

Contextual Info: BC 200 MINIATURE P N P A F LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR I M E C H A N IC A L O U T L IN E G E N E R A L D ESC R IP T IO N M T -4 2 The BC 200 is a PNP silicon planar epitaxial transistor in miniature plastic package designed for hearing aids, watches, paging systems and other equipment

C2373

Abstract: Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor
Contextual Info: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code

Marking 3ds sot

Abstract: transistor 5B1 BR 101 Transistor
Contextual Info: SIEMENS BC856S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low colfector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Fi FI FI U

bc 301 transistor

Abstract: bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A < 0 ,2 A v C E O ^ \^ PNP PNP

Marking 3ds sot

Abstract: Q62702-C2532 VPS05604
Contextual Info: BC 856S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type Marking Ordering Code

H12E

Contextual Info: BC 856U PNP Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197

Marking 3ds sot

Abstract: VPS05604 TRANSISTOR BC 650 c
Contextual Info: BC 856S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604

846PN

Abstract: VQE 11E
Contextual Info: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

Contextual Info: SIEMENS BC 846S NPN Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package 11 az t.£. FI iïl R Lü

5b1 transistor

Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type

857T

Abstract: BC857AT BC857BT SC-75
Contextual Info: BC 857T PNP Silicon AF Transistor 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs

Contextual Info: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

Contextual Info: BC 846U PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 VPW09197 C1

C2529 transistor

Abstract: Q62702-C2529 VPS05604 5b1 transistor 1Ds SOT363
Contextual Info: BC 846S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type Marking Ordering Code

Marking 1ps sot

Abstract: VPS05604
Contextual Info: BC 847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation

wabash relay

Abstract: 1820-3145 1826-0346 Rohm op amp tkf 28 1826-0180 Caddell-Burns Manufacturing e1420 5053HD619K0F GRM3195C1H102JD01D
Contextual Info: Agilent E1420B Component Level Information E1420B Universal Counter Component Level Information Information in this packet applies to the following assemblies: 1. E1420-68006 PC Assembly VXI Assembly 2. 53310-60008 PC Assembly (Input Board) The following is included in this packet:

Contextual Info: bbS3R31 Q02HS5U N AMER PHILIPS/DISCRETE «APX b7E D BCV64 BCV64B A SILICON PLANAR TRANSISTOR Double P-N-P transistor in a plastic SO T-143 envelope. Intended for Schmitt-trigger applications. N-P-N complement is the BC V63. Q U IC K R E F E R E N C E D A T A

TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

1000HA

Abstract: NE5517 dolby true HD circuit lm13600 application notes NE5517N operational transconductance amplifier LM13600 NS high end amplifier schematics LM13600 NE5517A
Contextual Info: Product specification Philips. Semiconductor# Linear Products N E 5 5 1 7 /5 5 1 7 A Dual operational transconductance amplifier PIN CONFIGURATION DESCRIPTION N, D Packages The NE5517 contains tw o current-controlled transconductance amplifiers, each with a differential Input and push-pull output. The

transistor bc 146

Abstract: transistor bc 570 transistor bc 630
Contextual Info: , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR GENERAL DESCRIPTION The BC 146 isaNPNsilicon planar epitaxial transistor in miniature plastic package designed for hearing

transistor smd marking BA

Abstract: transistor smd marking bb transistor BC 550 transistor smd marking BA sot-23 transistor smd marking BC BCW61B bc transistor icbo nA MARKING SMD PNP TRANSISTOR transistor smd ba rs TRANSISTOR BC 550 b
Contextual Info: Transistors IC SMD Type General Purpose Transistor BCW61A/B/C/D Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 PNP Epitaxial Silicon Transistor 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

transistor BC 458

Abstract: transistor BC 557 BC 458 transistor
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor B 560

Abstract: TRANSISTOR BC 136 BC560 TRANSISTOR BC 560 TRANSISTOR BC 135 IC 7414 transistor c-133 2493 transistor transistor Bc 82 ic 7414 cm
Contextual Info: BC 559 * BC 560 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendung: Rauscharme Vorstufen Application: Low noise prestages Besondere Merkmale: Features: • Verlustleistung 500 m W • Power dissipation 500 m W

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06