TRANSISTOR BA 752 Search Results

transistor ba 752

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef­ fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t­

Contextual Info: Standard ICs 6-channel high current driver BA6256 The BA 6256 is a low voltage, high current driver w ith six circuits, and is desig ned fo r a p plicatio ns such as LEDs, relays, solenoids, and other driver devices w hich operate at low voltages. This driver is particularly ideal for direct

P2624

Abstract: transistor d2624 ULN2003
Contextual Info: ULN2001ATHRU ULN2004A DARLINGTON TRANSISTOR ARRAYS SLDS036A - D2624, DECEMBER 1 9 7 6 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS 500-mA Rated Collector Current Single Output D OR N PACKAGE (TOP VIEW) High-Voltage Outputs. . , ,50 V

2N4300

Contextual Info: TYPE 2N4300 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR • TYPE 2N4300 BULLETIN NO. DL-S 668562, FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 15 W at 100°C Cose Temperature • Max VtE jat of 0.3 V at 1 A l ( • Typ t enof 130 ns at 1 A lc

2N458B

Abstract: 2N1022A 2N4588 transistor ba 752 2N1021A 2N456B 2H102 Transistor BC 227 Germanium Transistor Germanium power
Contextual Info: TYPES 2N456B, 2N457B, 2N458B, 2N1021A AND 2N1022A P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS Military and Industrial Applications mechanical data The use of silver a llo y to assem ble the mounting b ase a n d the use of resistance w elding to seal the can ,

Contextual Info: / T L lim TECHNOLOGY _ LTC1235 M icrop rocessor Supervisory C irc u it F€flTUR€S D C S C R IP T IO n • Guaranteed Reset Assertion at Vcc = 1V ■ 1.5mA Maximum Supply Current ■ Fast 35ns Max. Onboard Gating of RAM Chip Enable Signals

cq 724 g diode

Abstract: dr 25 diode texas TL497 TL497A
Contextual Info: TL497AC, TL497AI, TL497AY SWITCHING VOLTAGE REGULATORS SLVS009C - JUNE 1976 - REVISED AUGUST 1995 TL497AC, TL497AI. . . D, N, OR PW PACKAGE TOP VIEW High Efficiency . . . 60% or Greater Output Current. . . 500 mA Input Current Limit Protection TTL-Compatible Inhibit

transistor ba 752

Contextual Info: TOSHIBA MP6754 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M P 6 7 54 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage

LT 5247

Abstract: LT 5247 H LT 5245 LT 5248 LT 5245 TRANSISTOR hz 524-2 generator 380v schematic LT 5242 H LT 5241
Contextual Info: TE XA S IN S T R { O PT O} 8961726 TEXAS bÊ IN STR Î F | ÒTbl72Li □□ 3b clfl5 0 6 2C OPTO) 36982 D TIP660, TIP661, TIP662 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 T-33-29 8 0 W a t 100° C Case Temperature

NPN transistor 2n2222 beta value

Abstract: 2n3838
Contextual Info: TYPE 2N3838 N -P -N , P-N-P D U A L SILICON TRANSISTOR B U L L E T I N NO. D L - S 6 7 7 5 0 1 , M A R C H 1 9 6 5 - R E V I S E D A P R I L 1967 DESIGNED FOR COM PLEM ENTARY MEDIUM-POW ER, HIGH-SPEED SWITCHING AN D GENERAL PURPOSE AM PLIFIER APPLICATIONS

BA6446FM

Abstract: BA6446FP
Contextual Info: Motor driver ICs 3-phase motor driver BA6446FP/BA6446FM The BA6446FP and BA6446FM are 3-phase, full-wave, pseudo-linear motor drivers suited for VCR capstan motors. The 1C has a torque ripple cancellation circuit to reduce wow and flutter, a forced brake circuit that allows abrupt

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TXS0104E-Q1 SCES853A – NOVEMBER 2013 – REVISED APRIL 2014 1 Features 3 Description • • The TXS0104E-Q1 device connects an incompatible logic communication from chip-to-chip due to voltage

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TXS0104E-Q1 SCES853A – NOVEMBER 2013 – REVISED APRIL 2014 1 Features 3 Description • • The TXS0104E-Q1 device connects an incompatible logic communication from chip-to-chip due to voltage

mc34060

Abstract: MC35060
Contextual Info: TEXAS IN ST R ^ ÌLIN /IN TFCJ SS DE*J f i T b l ? E 4 ^ 0 3 M S t ö “ L j ~ TEXAS INSTR <L IN / INTFC 55C 34560 T -5 8 -1 1 -3 1 LINEAR INTEGRATED CIRCUITS • TYPES MC35060, MC34060 PULSE-WIDTH-MODULATION CONTROL CIRCUITS D2714, MARCH 1983 J OR N DUAL-IN-LINE PACKAGE

2N3902

Contextual Info: TYPE 2N3902 N-P-N SILICON POWER TRANSISTOR HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M IL IT A R Y APPLICATIONS X CD - I m C -< • 100 W at 75°C Case Temperature <- r V À 1 NJ m o jz • 400 V Collector-Emitter Off-State Voltage

Contextual Info: bq24120 bq24123 bq24125 Actual Size 3,5 mm x 4,5 mm www.ti.com SLUS688C – MARCH 2006 – REVISED AUGUST 2007 SINGLE-CHIP SWITCHMODE, LI-ION AND LI-POLYMER CHARGE-MANAGEMENT IC WITH ENHANCED EMI PERFORMANCE bqSWITCHER FEATURES 1 • • • • • Handheld Products

Contextual Info: PD - 9 .1 4 5 0 A International I R Rectifier IRG4BC30F P R ELIM IN A R Y Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: Section 21 Electrical Characteristics —Preliminary— 21.1 Absolute Maximum Ratings Table 21-1 lists the absolute maximum ratings. Item —Preliminary— Sym bol Value Unit Power supply voltage < O o Table 21-1 Absolute Maximum Ratings -0.3 to +7.0 V Programming voltage

2N2988

Abstract: 2N2967 2N2987 2N2994 2N2989 2N2993 2N2991 EL 2n25 2N25 2N2990
Contextual Info: TYPES 2N2987 THRU 2N2994 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS TYPES 2N2987 THRU 2N2994 BULLETIN NO. Dl-S 6810506 , DECEMBER HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VcE tat of 0.2 V at 200 mA

liquid level sensor schematic diagram

Abstract: thyristor driver TL560C RC Network 1079 12Switch
Contextual Info: TYPE TL560C PRECISION LEVEL DETECTOR LINEAR INTEGRATED CIRCUITS B U L L E T IN N O . D L -S 1 2 4 0 0 , M A Y 1 9 7 6 - R E V IS E D O C T O B E R 1 9 7 9 • Stable Threshold Level • Threshold Hysteresis • Low Input Current • Wide Supply Voltage Range

c 3866

Abstract: TIP75 texas instruments tip75 str 6863 d TIP75B 6863D transistor 3866 transistor 3866 s
Contextual Info: TEXAS INSTR ÎOPTO> ^2 DE | f H b l T S b 62C 0D3tiôti0 36860 T-33-" TIP75, TIP75A, TIP75B, TIP75C N-P-N SILICON POWER TRANSISTORS APRIL 19 7 8 - REVISED O CTOBER 1984 65 W at 2 5 ° C C ase Temperature 5 A Peak Collector Current High-Voltage, High-Forward and Clamped Reverse Energy

Contextual Info: bq24120 bq24123 bq24125 Actual Size 3,5 mm x 4,5 mm www.ti.com. SLUS688G – MARCH 2006 – REVISED AUGUST 2008

bq24120

Abstract: BQ24120RHLR BQ24120RHLT bq24123 BQ24123RHLR BQ24123RHLT bq24125 SLUA443
Contextual Info: bq24120 bq24123 bq24125 Actual Size 3,5 mm x 4,5 mm www.ti.com. SLUS688G – MARCH 2006 – REVISED AUGUST 2008

Contextual Info: bq24120 bq24123 bq24125 Actual Size 3,5 mm x 4,5 mm www.ti.com. SLUS688G – MARCH 2006 – REVISED AUGUST 2008