TRANSISTOR B772 Search Results

b72L

Abstract: IC regulator B72 sot-23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES

d82 sot23

Abstract: D882* transistor
Contextual Info: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23

b772

Abstract: BR B772
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-252 FEATURES •Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

b772

Abstract: TRANSISTOR b772
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-252 FEATURES •Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

D882B

Abstract: datasheet d882 B772 D882 B772B
Contextual Info: D882B D882B Silicon NPN Epitaxial Transistor Description :The D882B is designed for use in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. Features: ●Excellent hFE Linearity ●Complementary to B772B Chip Appearance

B772B

Abstract: B772 D882 datasheet d882 D882B
Contextual Info: B772B B772B Silicon PNP Epitaxial Transistor Description :The B772B is designed for use in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. Features: ●Excellent hFE Linearity ●Complementary to D882B Chip Appearance

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 B772 TRANSISTOR PNP FEATURES 1. EMITTER Low speed switching 2. COLLECTOR Value Units VCBO Collector-Base Voltage Parameter -40 V VCEO Collector-Emitter Voltage

TO-251 B772

Abstract: br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 B772 equivalent B772 PNP b772 transistor transistors b772
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

Contextual Info: B772C -3A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-126C FEATURES    Low frequency power amplifier High Current Low Speed Switching Emitter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER Low Speed Switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit

b772s

Abstract: transistors b772s
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772S TO-92 TRANSISTOR PNP FEATURES Low speed switching 1. EMITTER 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

br b772

Abstract: TRANSISTOR b772 B772 TRANSISTOR br b772 b772 transistor B772 datasheet B772 equivalent B772 PNP transistors b772 b772 to 126
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-126 FEATURES •Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

b772

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR（ PNP ） TO—126 FEATURES •Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter

B772

Abstract: br b772 TRANSISTOR b772 B772 PNP B772 SOT-89 sot 89 b772 transistors b772 B772 datasheet B772 equivalent
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 TRANSISTOR（PNP） SOT-89 FEATURES Low speed switching 1 2 3 1. BASE 1 2. COLLETOR 2 MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units

TRANSISTOR b772

Abstract: B772 equivalent B772 B772 PNP pnp b772 B772 datasheet b772 transistor transistor PNP b772
Contextual Info: PNP TRANSISTOR B772 3.0A z z z AF OUTPUT AMPLIFIER FOR DC-DC CONVERTER FOR CAMERA MOTOR DRIVER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage BVceo Collector-Base Breakdown Voltage BVcbo Emitter-Base Breakdown Voltage

br b772

Abstract: b772
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772 TRANSISTOR（PNP） FEATURES Power dissipation : 625 PCM TO-92 1. EMITTER m W（Tamb=25℃） 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR（ PNP ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range

B772

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 TRANSISTOR（PNP） FEATURES Power dissipation : 625 PCM SOT-89 1 2 3 1. BASE 1 m W（Tamb=25℃） 2. COLLETOR 2 3 3. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted

transistor b722

Abstract: transistor b722 p B722 p B722 TRANSISTOR DATA b772 to 126 transistor b722 b N E C B772 b722 transistor pnp b722 b772 p
Contextual Info: B772 TO-126 Plastic-Encapsulate Transistors Transistor PNP FEATURES TO-126 Power dissipation o P CM :1.25 W (Tamb=25 C) Collector current I CM :-3 A 1.EMITTER Collector-base voltage 2.COLLECTOR V (BR)CBO :-40 V 3.BASE 1 2 3 ELECTRICAL CHARACTERISTICS o (Tamb=25 C unless otherwise specified)

Contextual Info: B772S PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low speed switching. G  Emitter  Collector  Base H J A D A B C D E F G H J K B K E C Millimeter

b772s

Abstract: BTB772SA3 BTD882SA3
Contextual Info: CYStech Electronics Corp. Spec. No. : C817A3-H Issued Date : 2003.05.31 Revised Date:2004.07.02 Page:1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features • Low VCE sat ,typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics

B772 equivalent

Abstract: b772 to 126 b772 p TRANSISTOR b772 B772 SPECIFICATION pnp b772 BTB772T3S complementary b772 B772 b772 pnp
Contextual Info: CYStech Electronics Corp. Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3/S Features • Low VCE sat , typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics

2sb772

Contextual Info: 2SB772 PNP MEDIUM POWER TRANSISTOR PRELIMINARY DATA Features • HIGH CURRENT ■ LOW SATURATION VOLTAGE ■ COMPLEMENT TO 2SD882 Applications ■ VOLTAGE REGULATION ■ RELAY DRIVER ■ GENERIC SWITCH ■ AUDIO POWER AMPLIFIER ■ DC-DC CONVERTER 3 2 1 SOT-32