TRANSISTOR B722 Search Results
TRANSISTOR B722 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 27S185DM/B |
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27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 |
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TRANSISTOR B722 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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transistor b722
Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
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OCR Scan |
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equivalent transistor TT 3034
Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
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B861 transistor
Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR
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OCR Scan |
J/U13 B861 transistor equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR | |
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Contextual Info: AWB7223 1.930 -1.995 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7223 AWB7223 | |
LDJ2H825M03FA062
Abstract: AWB7225 DATE CODE MURATA Hybrid Couplers
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AWB7225 AWB7225 LDJ2H825M03FA062 DATE CODE MURATA Hybrid Couplers | |
AWB7227Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET- Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7227 AWB7227 | |
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Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29.5 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7225 AWB7225 | |
LDJ2H825M03FA062
Abstract: AWB7225 AWB7225P8
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AWB7225 AWB7225 LDJ2H825M03FA062 AWB7225P8 | |
AWB7223
Abstract: JESD22-C101D 9 class date sheet 2012 AWB7223RM52P8
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AWB7223 AWB7223 JESD22-C101D 9 class date sheet 2012 AWB7223RM52P8 | |
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Contextual Info: AWB7223 1.93 -1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7223 AWB7223 | |
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Contextual Info: AWB7223 1.93 -1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7223 AWB7223 | |
ETM1
Abstract: AWB7228
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AWB7228 AWB7228 ETM1 | |
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Contextual Info: AWB7224 728 - 768 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7224 AWB7224 | |
AWB7227Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET- Rev 1.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7227 AWB7227 | |
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Contextual Info: AWB7224 728 - 768 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7224 AWB7224 | |
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Contextual Info: AWB7223 1.930 -1.995 GHz Small-Cell Power Ampliier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7223 AWB7223 | |
AWB7228Contextual Info: AWB7228 2.545 - 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7228 AWB7228 | |
JS-001-2010Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7227 AWB7227 JS-001-2010 | |
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Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Ampliier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7227 AWB7227 | |
AWB7228P8
Abstract: K 2545 transistor
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AWB7228 AWB7228 AWB7228P8 K 2545 transistor | |
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Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET- Rev 1.5 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7227 AWB7227 | |
MODULE TM1Contextual Info: AWB7223 1.930 -1.995 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7223 AWB7223 MODULE TM1 | |
LDJ2H825M03FA062Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Ampliier Module ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7225 AWB7225 LDJ2H825M03FA062 | |
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Contextual Info: AWB7228 2.545 - 2.69 GHz Small-Cell Power Ampliier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System |
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AWB7228 AWB7228 | |