TRANSISTOR B722 Search Results

transistor b722

Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

equivalent transistor TT 3034

Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

B861 transistor

Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR
Contextual Info: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

Contextual Info: AWB7223 1.930 -1.995 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

LDJ2H825M03FA062

Abstract: AWB7225 DATE CODE MURATA Hybrid Couplers
Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

AWB7227

Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET- Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29.5 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

LDJ2H825M03FA062

Abstract: AWB7225 AWB7225P8
Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

AWB7223

Abstract: JESD22-C101D 9 class date sheet 2012 AWB7223RM52P8
Contextual Info: AWB7223 1.93 -1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

Contextual Info: AWB7223 1.93 -1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

Contextual Info: AWB7223 1.93 -1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

ETM1

Abstract: AWB7228
Contextual Info: AWB7228 2.62-2.69 GHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

Contextual Info: AWB7224 728 - 768 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

AWB7227

Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET- Rev 1.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

JS-001-2010

Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

AWB7228P8

Abstract: K 2545 transistor
Contextual Info: AWB7228 2.545 - 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET- Rev 1.5 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

MODULE TM1

Contextual Info: AWB7223 1.930 -1.995 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

LDJ2H825M03FA062

Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Ampliier Module ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

Contextual Info: AWB7228 2.545 - 2.69 GHz Small-Cell Power Ampliier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

transistor b722

Abstract: transistor b722 p B722 p B722 TRANSISTOR DATA b772 to 126 transistor b722 b N E C B772 b722 transistor pnp b722 b772 p
Contextual Info: B772 TO-126 Plastic-Encapsulate Transistors Transistor PNP FEATURES TO-126 Power dissipation o P CM :1.25 W (Tamb=25 C) Collector current I CM :-3 A 1.EMITTER Collector-base voltage 2.COLLECTOR V (BR)CBO :-40 V 3.BASE 1 2 3 ELECTRICAL CHARACTERISTICS o (Tamb=25 C unless otherwise specified)

Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module Data Sheet - Rev 2.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System • Low Profile Miniature Surface Mount Package;

dimmable LED driver

Abstract: UM10433
Contextual Info: UM10433 SSL2103 dimmable isolated LED driver demo board Rev. 1 — 9 December 2010 User manual Document information Info Content Keywords SSL2103, LED driver, mains dimmable, constant current, driver, mains supply, AC/DC conversion, user manual. Abstract This is a user manual for the SSL2103 mains dimmable 22 W LED.

ICE1HS01G

Abstract: TRANSISTOR D206 24V 5A SMPS circuit diagram LLC resonant transformer core pc47 SMPS CIRCUIT DIAGRAM 24v transistor NPN c115 24v 5a smps 24V SMPS 200w circuit smps resonant llc
Contextual Info: Application Note, V1.0, 22 April 2009 Application Note EVALHS-200W-ICE1HS01G 200W SMPS Evaluation Board using LLC Half Bridge Resonant Controller ICE1HS01G Power Management & Supply N e v e r s t o p t h i n k i n g . Published by Infineon Technologies AG