TRANSISTOR B 647 C Search Results

BD651

Contextual Info: BD643; BD645; BD647; BD649; ^ BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 envelope. They are intended fo r output stages in audio equipment, general amplifiers, and analogue switching

Contextual Info: b?E ]> bb53T31 0 Q 2 3 C12C1 647 « A P X Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue July 1993 _ FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

transistor 647

Abstract: BUZ71 PVAPOX 647 transistor
Contextual Info: 30E J> • 7T2T2_37 DO 3D 1Sb 3 M ^ ^ O i - S G S -T H O M S O N s 6 - s-thomson = L[I(g¥GM0 S BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:

transistor BD6

Abstract: bd645 transistor BD643 H 649 A transistor
Contextual Info: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR SS9015 LOW FREQUENCY, LOW NOISE AMPLIFIER TO -92 • Complement to SS9014 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

lg bd645

Abstract: darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647
Contextual Info: BD643; BD645; BD647; BD649; BD651 PHILIPS I N T ERNATIONAL 5bE D • 7110fl2b 0 0 4 2 ^ 741 « R H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching

Contextual Info: STANLEY ELECTRIC CO LTD 5SE D • 4b7fll5ß QQ0201Ö 57b B I I S T ínlei -r¿+t- c2> PHOTODARLINGTON TRANSISTOR PD302 Package Dimensions ■ FEATURES • • • HIGH SENSITIVITY (lc = 12mW TYP. HIGH DIRECTIVITY MOLDED EPOXY TYPE ■ APPLICATION • •

TIP 642 transistor

Abstract: transistor 2N 3792 2N5333 4998 transistor 2N4300 APPLICATION MIN 5758 2N DIODE TIP 75 transistor
Contextual Info: TYPE 2N5333 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4300 15 W at 100°C Case Temperature Max V E|„, of 0.45 V at 1 A Typ ton of 150 ns at 1 A l c lc

Contextual Info: PHILIPS INTERNATIONAL Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK542-1 OOA/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

Contextual Info: BSE D • Ô23fc»320 0 0 1 7 0 ^ PNP Silicon RF Transistor SIEMENS/ SPCL-, SEMICONDS ñ H SIP BFT 93 _ *'" " _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. • Complementary type: BFR 93P NPN .

Contextual Info: h "7 > V $ /Transistors 7 5 7 2SD1757K K I t °7 * ' > ^ ; U 7 U _ ^ 7 _ y N °- * - : t - ; i' KNpN Ct, t 7j*iillliffl/M edium Power Amp. Epitaxial Planar Super Mini-Mold NPN Silicon Transistor • ^ ff^ rfa E I/D im e n s io n s (U n it: mm V c E (s a 1 )*^ lC -(£ t'„

MG75G2CL1

Abstract: MG75G2cl1 toshiba 68Q5 A649
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75G2CL1 Unit in mm 5-Mi 2-05.3ÍO.3 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. o . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.

2SK1407

Contextual Info: ROHM CO LTD 4DE D • 7 0 2 f l cm OGQhMMb 2 B R H M h 7 > v X £ /Transistors 2SK1407 ‘ 2SSC1407 Low Noise High Electron Mobility Transistor • 2SK1407 i , ~ 7 ^3 / ~ 2 S ' \f iiH /D im e n s io n s (Unit: mm M BE (Molecular Beam Epitaxy) H E M T T -fo

647 transistor

Abstract: TA6206 cascode transistor array
Contextual Info: H A RR IS S E M I C O N D S E C T O R ¡SjHARRIS blE D • 4 3 02 27 1 0 0 4 7 0 H b b46 « H A S 1A1197 Æ U S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features • Gain Bandwidth Product (fT Description .>1GHz

Contextual Info: FM IF IC FOR PAGER NJM2294 NJM2294 is a super low current FM IF IC for pagers. It includes almost all functions of the paging IF sysem. In those functions, the RSSI function can be used for autmatic gain control. When the electric field strength is high, the RSSI output signal

mosfet marking code gg

Abstract: marking g1s marking code g1s
Contextual Info: 711002b G 0 b a ? n TTT H P H I N BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television

Contextual Info: bbS3^31 00547S3 111 « A P X N AMER PHILIPS/DISCRETE BF997 b7E ]> SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S 0T143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television

Contextual Info: 0912GN-600 600 Watts - 65 Volts, 128 s, 10% Broadband Data Link 960 - 1215 MHz Preliminary GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 0912GN-600 is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18dB gain,

Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A

Contextual Info: zSzmL-donductoi ZPioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX; (973) 376-8960 MTP2N80 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS M*MN'. -I*-! •H B h- 1 ±

GL-12F

Abstract: transistor top 222 GL-N12F GL-N12F B - P GL-N12F-P GL-N12H-P10 N12H GL-N12H GA10 GL-12F10
Contextual Info: SERIES Low Price Square-shaped Inductive Proximity Sensor GXL INDUCTIVE PROXIMITY SENSORS GL-N12 Marked Conforming to EMC Directive Exclusive Mounting Bracket is Needless Low Price Wide Variation The GL-N12 series can be reliably fixed even without an exclusive

PIC646

Abstract: DIODE 1334 LM lm 3844 diode 20KHz PIC645 DIODE 1334 PIC600 PIC647 PIC655 PIC656
Contextual Info: POWER INTEGRATED CIRCUIT PIC645 PIC646 PIC647 PIC655 PIC656 PJC657 Switching Regulator 15 Amp Positive and Negative Power Output Stages FEATURES • Designed and characterized fo r sw itch in g regulator a p p lica tio n s • Cost saving design reduces size, improves efficiency, reduces noise and RFI See note 4.

Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A

ipc-SM-782

Abstract: BC847BLD BC847BLD-7
Contextual Info: BC847BLD Lead-free Green NEW PRODUCT SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE Features • · · · · Low Deviation in Base-Emitter Voltage Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant Note 2