TRANSISTOR B 1666 Search Results

Contextual Info: TOSHIBA {DISCRETE/OPTOJ DE I ^ 0 ^ 7 5 5 0 O O l b b b E 2 99D 16662 9097250 TOSHIBA <DISCRETE/OPTO SEMICONDUCTOR D T ^ cj^ TOSHIBA FIELD EFFECT TRANSISTOR 2SK386 SILICON N CHANNEL MOS TYPE Æ - M O S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA O I S C R E T E / O P T O } ^ 9097250 TOSHIBA CDISCRETE/OPTO ¿jashih SEMICONDUCTOR DE I t O T T S S G O D l b b b S 99D 16665 ^~T- 3ci-J3 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 3 8 7 SILICON N CHANNEL MOS TYPE 7 T - M 0 S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS

2SA1462

Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
Contextual Info: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,

JE 800 transistor

Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
Contextual Info: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )

2SD571

Abstract: 2SB605
Contextual Info: NEC v U = i > h 7 > y ^ ^ Silicon T ran sisto r 2SD571 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier £fJfil2 Unit : mm o t —T 'i *T> y°ï$co Y ÿ 4 o 2 S B 605 ¿ n y 7 “ ') S > ? >) O / J^ T P tA ^ ^ <, 7.0 MAX. T é tto if t lÎŒ T - t o

se5020

Abstract: marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM
Contextual Info: NEC j m *= rJ Ÿ T X '> I J =3 > b S ilic o n T ra n s is to r A 2SA1464 PNP i k ^ r s ] Ja J /; + y T iP iv 'J =i > h l > ï £> <£ 7 'm PNP Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^ 0 / P A C K A G E DIMENSIONS Unit : mm # * / FEATURES

uPA77HA

Abstract: upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460
Contextual Info: NEC A. l i T / \ m .'g - h Com pound Transisitor ' i 7 ¿¿PA77HA PNP h = 7 > i> 7 ,5 U f c Jl& jg S & Jif liffl PNP Silicon Epitaxial Compound Transistor Differential Amplifier ^ 0 / P A C K A G E D IM ENSIONS Unit: mm ^ / F E A T U R E S 01 chip nm.'chhtztb, ^ r i 4 ( j v b e = 2 mv t y p . ) ^ c ,

transistor jsx

Abstract: 2SK681 ipw fet s0822 t460 transistor
Contextual Info: ^ £ — 5 7 . 5 / — h M O S W * im . R $ b $ k '< t7 - Y :7 > ï ï * 9 M O S Field Effect Power Transistor 2SK681 MOS F E T 2SK 681Ü , N f - - v ^ . ; H i^ > 'f I7 - M 0 S t i i z «t i m ^c7 K 7 # x a 7 f > / FETT, f v q x ¥ i i : mm) 5 V'ffiiH*IC<7)

A1376

Abstract: 2SA1376 PA33 nec C 3514 63445-5 L0249 ScansUX881 NI3T
Contextual Info: NEC h =? Silicon T ra n sisto rs 2 S A 1 3 7 6 , 1 3 7 6 A PNP Epitaxial Transistor High Voltage Amplifier PACKAGE DIMENSIONS ^/FEA TU RES Unit : mm V c e o : ~ 1 8 0 V / — 200 V ( 2 S A 1 376 / 2 S A 1376 A ) o B S E t t . O h FE « ' l - T ' I f i : 0 .7 5

2SB963

Abstract: 2SD1286 T108 T460 TS33 CC OWV W ST
Contextual Info: NEC j m = f = f iS r f K D arlington T ra n s is to r _ 2SD1286 A NPN =l> NPN Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier, Low Speed Switching ftM M -' ! y b > 7 > if x ? t , U nit: mm 'j u —, v w / -i k, 7 y y° n c c o & t i y 7 4 rtò m ià iz M & T to

Contextual Info: Compound Transistor G Σ ÎÆ f* 3 M P N P ^ ft I M 1 L 4 M > ' 3 > : mm) m o A<'f T X IE in; £ f*aM L T ^ i 1 0 Ri = 47 kQ, R 2= 47 kQ) c B o—V A — Ri —V v \ —'* Rs o E OGA1L4M t =? >7° IJ / > 9 U M arking (T a —25 °C ) *1 a v 9 •3 v 9 9

ail4m

Abstract: FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M
Contextual Info: ± I /7N I ih Compound Transistor F N 1 L4 M i&ijtrtMPNPxfc 4# .' mm it o ^ r x L ^ ^ L T v ^ - r . 2 . 8 + 0.2 R i = 47 k£2, R 2= 47 kQ) o F A 1 L 4 M t 3 y y >J 9 y ? ') (T a = H £ to 2 5 °C ) B& g ^r 5e #r # z V CBO -6 0 V =i W 9 9 • J- = -y 9m 'M l±

2SB1149

Abstract: 2SD1692 T460
Contextual Info: $r 13 Si PP NEC ✓ N°r 7 - Silicon P o w e r Tran sisto r m = f= r/Y T X S 2 B 1 1 4 9 'J U P N P i fc; P N P Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier « « /FEA TU R ES ^f-JFi /PA C K A G E D IM EN SIO N S U n it: mm o r - u > f > « 1 % vtztb,

J196

Abstract: L0836 40t60 2sj196 DF RV transistor 2SK1482
Contextual Info: Mos M O S Field Effect Transistor 2 P 2SJ196 l i P f t ? ' / « izx v -f- > / * MOS FET Ü t &tznb, , y ^ / 1 9 6 9w m m m i f t t » < , x 4 y f- > 'j J MOS F E T MOS FET Z", 5 V'tiJJtiU C ò S &i # a r v* 5.2 MAX -f H jj S T " ì ~ o Œ i t o 5v i c fr b m m m T é t t o

CMSD4448

Abstract: aahp D3 017 6PIN 1N4148 CMPD7000 EP05Q03L MAX1605 MAX1605ETT-T MAX1605EUT-T MAX1605EVKIT
Contextual Info: 19-1666; Rev 1; 10/03 30V Internal Switch LCD Bias Supply Features ♦ Adjustable Output Voltage up to 30V ♦ 20mA at 20V from a Single Li+ Battery ♦ 88% Efficiency ♦ Up to 500kHz Switching Frequency ♦ Selectable Inductor Current Limit 125mA, 250mA, or 500mA

CMSD4448

Contextual Info: 19-1666; Rev 1; 10/03 3 0 V I nt e rna l Sw it c h LCD Bia s Supply Fe a t ure s The MAX1605 boost converter contains a 0.5A internal switch in a tiny 6-pin SOT23 package. The IC operates from a +2.4V to +5.5V supply voltage, but can boost battery voltages as low as 0.8V up to 30V at the output.

D3 017 6PIN

Abstract: CMSD4448 sot23-6 ABW 6-pin ic 237 MAXim step-up sot-23 MBRS0530
Contextual Info: 19-1666; Rev 1; 10/03 30V Internal Switch LCD Bias Supply The MAX1605 boost converter contains a 0.5A internal switch in a tiny 6-pin SOT23 package. The IC operates from a +2.4V to +5.5V supply voltage, but can boost battery voltages as low as 0.8V up to 30V at the output.

aahp

Abstract: MAX1605EVKIT 1n4148 sot23 motorola transistor 2N2907A CMSD4448 1N4148 2N2907A CMPD7000 EP05Q03L MAX1605
Contextual Info: 19-1666; Rev 0; 7/00 28V Internal Switch LCD Bias Supply in SOT23 Features ♦ Adjustable Output Voltage up to 28V ♦ 20mA at 20V from a Single Li+ Battery ♦ 88% Efficiency ♦ Up to 500kHz Switching Frequency ♦ Selectable Inductor Current Limit 125mA, 250mA, or 500mA

CMSD4448

Abstract: MBRS0530 1N4148 2N2907A CMPD7000 EP05Q03L MAX1605 MAX1605EUT-T MAX1605EVKIT
Contextual Info: 19-1666; Rev 0; 7/00 28V Internal Switch LCD Bias Supply in SOT23 Features ♦ Adjustable Output Voltage up to 28V ♦ 20mA at 20V from a Single Li+ Battery ♦ 88% Efficiency ♦ Up to 500kHz Switching Frequency ♦ Selectable Inductor Current Limit 125mA, 250mA, or 500mA

CMSD4448

Contextual Info: 19-1666; Rev 1; 10/03 30V Internal Switch LCD Bias Supply The MAX1605 boost converter contains a 0.5A internal switch in a tiny 6-pin SOT23 package. The IC operates from a +2.4V to +5.5V supply voltage, but can boost battery voltages as low as 0.8V up to 30V at the output.

CMSD4448

Contextual Info: 19-1666; Rev 1; 10/03 30V Internal Switch LCD Bias Supply The MAX1605 boost converter contains a 0.5A internal switch in a tiny 6-pin SOT23 package. The IC operates from a +2.4V to +5.5V supply voltage, but can boost battery voltages as low as 0.8V up to 30V at the output.

Contextual Info: TOSHIBA {DISCRETE/OPTO} "H 9097250 TOSHIBA DISCRETE/OPTO » F | ciDci7ESG QGlbbbfl 3 | ~ 99D 16668 D 7 SEMICONDUCTOR 3 ?~/3 TOSHIBA FIELD EFFECT TRANSISTOR 2 SK 3 8 8 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm

A45A

Abstract: SO402 2SK386 j2f3 16664
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- ‘H 9097250 TOSHIBA <DISCRETE/OPTO> DE 99D SEMICONDUCTOR I SOTTESO OOlbbba 2 16662 DT_3CH3 TOSHIBA FIELD EFFECT TRANSISTOR 2SK386 SILICON N CHANNEL MOS TYPE TECHNICAL DATA <7T — M O S INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

0T39

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA "H <D I S C R E T E / O P T O » F | ciDci7SSG OOlbbbfl 3 1~~ 99D 16668 D T- TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 8 8 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-MOS ) INDUSTRIAL APPLICATIONS Unit in tnm