TRANSISTOR ARRAY HIGH FREQUENCY Search Results
TRANSISTOR ARRAY HIGH FREQUENCY Equivalents
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TRANSISTOR ARRAY HIGH FREQUENCY Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CO-213UHFMX20-100 |
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Amphenol CO-213UHFMX20-100 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 100 ft | |||
| CO-213UHFMX20-005 |
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Amphenol CO-213UHFMX20-005 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 5 ft | |||
| CO-213UHFMX20-025 |
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Amphenol CO-213UHFMX20-025 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 25 ft | |||
| CO-213UHFMX20-010 |
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Amphenol CO-213UHFMX20-010 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 10 ft | |||
| CO-213UHFMX20-015 |
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Amphenol CO-213UHFMX20-015 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 15 ft |
TRANSISTOR ARRAY HIGH FREQUENCY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
M54563FPContextual Info: <TRANSISTOR ARRAY> M54563FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54563FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high |
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M54563FP 500mA M54563FP 500mA) | |
DARLINGTON TRANSISTOR ARRAYContextual Info: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high |
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M54562FP 500mA M54562FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY | |
M54562FPContextual Info: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high |
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M54562FP 500mA M54562FP 500mA) | |
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Contextual Info: <TRANSISTOR ARRAY> M54563FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54563FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high |
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M54563FP 500mA M54563FP 500mA) 20P2N-A | |
BJT IC Vce
Abstract: NPN Transistor Pair HFA3134 npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E
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HFA3134 MM3134 HFA3134, BJT IC Vce NPN Transistor Pair npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E | |
MOTOROLA transistor 413
Abstract: transistor br 5 n 60 CR820
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OCR Scan |
CR820 CR820 244D0 MOTOROLA transistor 413 transistor br 5 n 60 | |
zener diode 10.5k
Abstract: DARLINGTON TRANSISTOR ARRAY M54525AGP DIODE 85c
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M54525AGP 500mA M54525AGP 500mA zener diode 10.5k DARLINGTON TRANSISTOR ARRAY DIODE 85c | |
M54525AGPContextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54525AGP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54525AGP is seven-circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. |
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M54525AGP 500mA M54525AGP 500mA | |
HFA3134
Abstract: npn 8 transistor array
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HFA3134 MM3134 HFA3134, npn 8 transistor array | |
M54525AGPContextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54525AGP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54525AGP is seven-circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. |
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M54525AGP 500mA M54525AGP 500mA | |
M54537FP
Abstract: M54537P
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M54537P/FP 350mA M54537P M54537FP 350mA) 250mA) | |
M54519P
Abstract: M54519FP IC M54519P
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M54519P/FP 400mA M54519P M54519FP 400mA) IC M54519P | |
H3101B
Abstract: HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration
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HFA3101 HFA3101 10GHz) FN3663 UPA101 H3101B HFA3101B HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration | |
HFA3101
Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
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HFA3101 HFA3101 10GHz) RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz | |
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18P4G
Abstract: 20P2N-A M63807FP M63807KP M63807P
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M63807P/FP/KP 300mA M63807P/FP/KP 300mA) 18P4G 20P2N-A M63807FP M63807KP M63807P | |
M54516PContextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54516P 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54516P is five-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. |
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M54516P 500mA M54516P 500mA) | |
NPN DARLINGTON TRANSISTOR ARRAY
Abstract: 300 W npn darlington power transistors M54522WP Transistor Array
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M54522WP 400mA M54522WP 400mA) Jul-2011 NPN DARLINGTON TRANSISTOR ARRAY 300 W npn darlington power transistors Transistor Array | |
18P4G
Abstract: 20P2N-A M63805FP M63805KP M63805P
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M63805P/FP/KP 300mA M63805P/FP/KP 300mA) 18P4G 20P2N-A M63805FP M63805KP M63805P | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54531WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54531WP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current |
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M54531WP 400mA M54531WP BVCEO40V) 400mA) 16P4X | |
M63806KP
Abstract: 18P4G 20P2N-A M63806FP M63806P
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M63806P/FP/KP 300mA M63806P/FP/KP 300mA) M63806KP 18P4G 20P2N-A M63806FP M63806P | |
M54517PContextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54517P 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54517P is seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. |
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M54517P 400mA M54517P 400mA) | |
M54585FP
Abstract: 24 "transistor array"
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M54585FP 500mA M54585FP 500mA) 24 "transistor array" | |
M54539P
Abstract: M54539
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M54539P 700mA M54539P 700mA) M54539 | |
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Contextual Info: <TRANSISTOR ARRAY> M54585FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE DESCRIPTION M54585FP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current |
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M54585FP 500mA M54585FP 500mA) 20P2N-A | |