TRANSISTOR AOD408 Search Results

TRANSISTOR AOD408 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR AOD408 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AOD408 Abstract: aoD408 transistor L082 Transistor AOD408 Contextual Info: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pb-free	Original	AOD408 AOD408L O-252 aoD408 transistor L082 Transistor AOD408	PDF
Contextual Info: Rev 2: Sept 2004 AOD408, AOD408L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM	Original	AOD408, AOD408L AOD408 O-252	PDF
AOD408 Contextual Info: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pb-free (meets ROHS &	Original	AOD408 AOD408 O-252	PDF
Contextual Info: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pb-free (meets ROHS &	Original	AOD408 AOD408 O-252	PDF
D408 Abstract: D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408 AOD408L Contextual Info: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications).	Original	AOD408 AOD408 AOD408L O-252 PD-00085 D408 D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408	PDF
AOD408 Abstract: L082 aoD408 transistor AOD408L Contextual Info: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications).	Original	AOD408 AOD408 AOD408L O-252 L082 aoD408 transistor	PDF