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    TRANSISTOR AK 157 Search Results

    TRANSISTOR AK 157 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    TRANSISTOR AK 157 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUK75

    Abstract: BUK7E11-55B
    Contextual Info: I2P AK BUK7E11-55B N-channel TrenchMOS standard level FET Rev. 3 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


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    BUK7E11-55B BUK75 BUK7E11-55B PDF

    Contextual Info: I2P AK BUK7E11-55B N-channel TrenchMOS standard level FET Rev. 3 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


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    BUK7E11-55B PDF

    3004x

    Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
    Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


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    fl23SbOS 0G04737 Q60206-X55 BFX55 23SbOS 150mA 3004x SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M PDF

    GR-1089-CORE

    Abstract: PEB4264 TISP8200M TISP8200MDR TISP8201M TISP8201MDR transistor k44 tip 416 transistor
    Contextual Info: TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP8200M & TISP8201M High Performance Protection for SLICs with +ve & -ve Battery Supplies TISP8200M D Package Top View


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    TISP8200M, TISP8201M, TISP8200M TISP8201M TISP8200M GR-1089-CORE PEB4264 TISP8200MDR TISP8201M TISP8201MDR transistor k44 tip 416 transistor PDF

    DATA SHEET SCR TRANSISTOR

    Abstract: PEB4264 k44 transistor SCR 213 specifications of scr GR-1089-CORE TISP8200M TISP8200MDR TISP8201M TISP8201MDR
    Contextual Info: TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP8200M & TISP8201M High Performance Protection for SLICs with +ve & -ve Battery Supplies TISP8200M D Package Top View


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    TISP8200M, TISP8201M, TISP8200M TISP8201M TISP8200M DATA SHEET SCR TRANSISTOR PEB4264 k44 transistor SCR 213 specifications of scr GR-1089-CORE TISP8200MDR TISP8201M TISP8201MDR PDF

    GR-1089-CORE

    Abstract: PEB4264 TISP8200M TISP8200MDR TISP8200MDR-S TISP8201M TISP8201MDR TISP8201MDR-S K45 S2
    Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP8200M & TISP8201M High Performance Protection for SLICs with +ve & -ve Battery


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    TISP8200M, TISP8201M, TISP8200M TISP8201M TISP8200M GR-1089-CORE PEB4264 TISP8200MDR TISP8200MDR-S TISP8201M TISP8201MDR TISP8201MDR-S K45 S2 PDF

    TRANSISTOR BL 560

    Abstract: 79R241 D008 GR-1089-CORE infineon slic TISP6NTP2C
    Contextual Info: H V SC AV ER O M A I S IO P L L A N IA BL S N T E TISP6NTP2C *R o QUAD FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP6NTP2C High Voltage Ringing SLIC Protector Independent Tracking Overvoltage Protection for Two SLICs: - Dual Voltage-Programmable Protectors


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    PDF

    array resistor bourns

    Abstract: D008 infineon slic 79R241 GR-1089-CORE SLIC10 K1 transistor array TISP6NTP2C
    Contextual Info: TISP6NTP2C QUAD FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP6NTP2C High Voltage Ringing SLIC Protector Independent Tracking Overvoltage Protection for Two SLICs: - Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V


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    PDF

    TISP6NTP2C

    Contextual Info: TISP6NTP2C QUAD FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP6NTP2C High Voltage Ringing SLIC Protector Independent Tracking Overvoltage Protection for Two SLICs: - Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V


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    Ro510 06/03/PI0269 TISP6NTP2C PDF

    MQ 6 SENSOR pin diagram

    Abstract: MQ 5 SENSOR pin diagram MQ 6 SENSOR
    Contextual Info: W fipl HEWLETT mLftm PACKARD Low Current Bar Code D igitizer IC Technical Data HBCC-0500 Features • Compatible with HP Bar Code Sensors -H B C C -1570- 0.013 in. 0.33 mm - HBCC-1580 - 0.007 in. 0.185 mm - HBCC-1590 - 0.005 in. 0.13 mm • Ambient Light Rejection


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    HBCC-0500 HBCC-1580 HBCC-1590 MQ 6 SENSOR pin diagram MQ 5 SENSOR pin diagram MQ 6 SENSOR PDF

    tip 420 transistor

    Abstract: QRC1133 st178 silicon diode temperature sensor Reflective Optical Sensor with Transistor Output
    Contextual Info: so REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRC1133 PACKAGE DIMENSIONS DESCRIPTION Th e Q RC1133 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing. The phototransistor reponds to radiation from the emitting


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    QRC1133 QRC1133 ST1781 tip 420 transistor st178 silicon diode temperature sensor Reflective Optical Sensor with Transistor Output PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBCX70GLT1G LBCX70JLT1G LBCX70KLT1G Featrues Pb-Free Package is Available. Ordering Information Device Marking LBCX70GLT1G LBCX70GLT3G LBCX70JLT1G LBCX70JLT3G LBCX70KLT1G AG AG AJ AJ AK Shipping


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    LBCX70GLT1G LBCX70JLT1G LBCX70KLT1G LBCX70GLT3G LBCX70JLT3G 3000/Tape 10000/Tape PDF

    QRB1134

    Abstract: QRB1133 LF 833
    Contextual Info: REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1133/1134 DESCRIPTION PACKAGE DIMENSIONS — .328 8.33 .420 (1 0.6 7)— Th e QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.


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    QRB1133/1134 QRB1133/1134 QRB1133 QRB1134 LF 833 PDF

    CLC207AI

    Abstract: THERMALLOY 2268b CLC205 CLC207
    Contextual Info: Low Distortion Wideband Op Amp APPLICATIONS: • fast, precision A/D conversion • wide dynamic range IF amps • test waveform generation • VCO drivers • DDS postamps • radar/communication receivers • line drivers FEATURES typical : • -8 0 /-8 5 d B c 2nd/3rd harmonics at 20MHz


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    CLC207 CLC207 20MHz CLC207. CLC207AI THERMALLOY 2268b CLC205 PDF

    Contextual Info: 4SE D ISOCOM COMPONENTS LTD • MôfibSlD ÜD0030E Q B I S O MOC 8100X ' Wfc*mms*»?hw crv •?v t ^ .’îîäfl'^1- M i ï 1 * 3 1' v ?:!'■■vc*i ^ :"'-I-.':.!!hJ - ^ € Jr " iJ'-aHlaV M dfti'i '■’Üil5>»iyiyrf'iîi, w’1,^ m - n % æ >frf C J^Iya- y*:


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    D0030E 8100X 8100X PDF

    Transistor BFR 96

    Abstract: 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 BFR34A
    Contextual Info: SS C D • fl235bD S QQQMb70 ÍS I E û 2 BFR34A 2 N 6620 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ -/s' SIEMENS A K T I E N 6 E S E LLS CH AF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar


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    fl235bD QQQMb70 BFR34A 2N6620. Q62702-F346-S1 Q68000-A4668 0Q0Mb73 Transistor BFR 96 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 PDF

    AAT3693-AA

    Abstract: AAT3693 CRCW04021002F CRCW04021501F TDFN-10 Lithium-Ion Battery Charger 23-6 1471K
    Contextual Info: PRODUCT DATASHEET AAT3693 BatteryManagerTM 1.6A Lithium-Ion/Polymer Battery Charger in 2.2x2.2 TDFN General Description Features The AAT3693 BatteryManager is a highly integrated single-cell lithium-ion/polymer Li-Ion battery charger which operates from a USB port, or an AC adapter input


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    AAT3693 AAT3693 AAT3693-AA CRCW04021002F CRCW04021501F TDFN-10 Lithium-Ion Battery Charger 23-6 1471K PDF

    Contextual Info: 45E D ISOCOM COMPONENTS LTD • MflfibSlO □□□□274 T « I S O . IS 204X I»},.lu,■K-'n»."s *«»»■■g».$'ji 'r * v H » ^ ^ ^ ^ I* .i£ ï OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT DESCRIPTION The IS 204X is a optically coupled isolator consisting


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    PDF

    BFQ60

    Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
    Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


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    fl23Sb05 QQ04b43 -TZ3/-33_ Q62702-F655 fl23SbOS BFQ60 BFQ60 BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2 PDF

    AAT3693

    Abstract: AAT3693-AA CRCW04021002F CRCW04021501F TDFN-10
    Contextual Info: PRODUCT DATASHEET AAT3693 BatteryManagerTM 1.6A Lithium-Ion/Polymer Battery Charger in 2.2x2.2 TDFN General Description Features The AAT3693 BatteryManager is a highly integrated single-cell lithium-ion/polymer Li-Ion battery charger which operates from a USB port, or an AC adapter input


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    AAT3693 AAT3693 AAT3693-AA CRCW04021002F CRCW04021501F TDFN-10 PDF

    OPB706B

    Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB804 PACKAGE DIMENSIONS 500 12.70; PIN 1 -.175 (4.45 _L .250 (6.35) T I FEATURES — — rt .070(1.78) J_ 'SEE NOTE 4 .350 (8.89) MIN J_ .300 (7.62)- I I-SEE NOTE 3 (-.125 (3.18) ±.005 .460 (11.68) .100 (2.54)- j I-S E E NOTE 3


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    OPB804 OPB804 OPB706B PDF

    zo 107 NA P 611

    Abstract: TRANSISTOR 2SC 2026 642p 2sc 643
    Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — *- — — •» «* w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


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    fl23Sb05 QQQ4b43 Q62702-F655 023SbQS BFQ60 zo 107 NA P 611 TRANSISTOR 2SC 2026 642p 2sc 643 PDF

    1336-WB035

    Abstract: 1336-MOD-KB005 1321-3RB400-B 1336-WB110 dynamic brake bulletin 1336 1336-WB110 manual circuit 1336-MOD-KB050 20S-RFC AC drives regenerative braking circuits 1200 kVA, 690V transformers
    Contextual Info: Common DC Bus Selection Guide Common DC Bus Applications Introduction Contents Overview this page Typical Common DC Bus Configuration this page Non-Regen Bus Supplies 3 Line Regeneration Solutions 8 Choppers & Dynamic Brakes 15 DC Input Drives 21 Power Components


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    DRIVES-SG001B-EN-P DRIVES-SG001A-EN-P 1336-WB035 1336-MOD-KB005 1321-3RB400-B 1336-WB110 dynamic brake bulletin 1336 1336-WB110 manual circuit 1336-MOD-KB050 20S-RFC AC drives regenerative braking circuits 1200 kVA, 690V transformers PDF

    201896B

    Contextual Info: DATA SHEET AAT3693 1.6A Li-Ion/Polymer Battery Charger in a 2.2x2.2 TDFN Package General Description Features The AAT3693 BatteryManager is a highly integrated single-cell lithium-ion/polymer Li-Ion battery charger which operates from a USB port, or an AC adapter input


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    AAT3693 AAT3693 201896B 201896B PDF