TRANSISTOR AD Search Results

DUAL TRANSISTOR

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR „ DESCRIPTION The UTC TC200 is an epitaxial planar NPN transistor; it uses UTC’s advanced technology to provide the customers with high DC

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR  DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the

4124DL

Abstract: 4124dl power transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4124D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC 4124D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4126D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC 4126D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ 1 DESCRIPTION The UTC 4128D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMT1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMT1N is a dual transistor, including two PNP transistors. It uses UTC’s advanced technology to provide the customers with high DC current gain, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  1 DESCRIPTION The UTC 4128D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR  DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC’s advanced technology to provide

yn 1018

Abstract: MPF820 RS-50S Scans-00100834
Contextual Info: MPF820 silicon Advance Inform ation JUNCTION FIELD-EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION FIELD-EIFFECT TRANSISTOR SILIC O N N -CHANNEL . . . depletion mode jun ctio n fie ld -e ffect transistor designed fo r low noise grounded gate RF a m plifier applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MN2510 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN TRANSISTOR  DESCRIPTION The UTC MN2510 is an NPN transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.

2sa1013

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD KTD863 Preliminary NPN EPITAXIAL SILICON TRANSISTOR TRIPLE DIFFUSED NPN TRANSISTOR  DESCRIPTION The UTC KTD863 is a triple diffused NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage and high collector current

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMY1N Preliminary DUAL TRANSISTOR DUAL TRANSISTOR  DESCRIPTION The UTC UMY1N is a dual transistor, including a NPN and a PNP which have common emitters. it uses UTC’s advanced technology to provide customers with high DC current gain, etc.

transistor TE 901 equivalent

Abstract: transistor TE 901 IGT6D11 IGT6E11
Contextual Info: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

vqe 24 d

Abstract: vqe 24 e VQE 23 E vqe 23 vqe 14 E VQE 21 d vqe 23 f vqe 23 c IGT6D20 IGT6E20
Contextual Info: IGT6D20,E20 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 0 Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR  DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD238 PNP EPITAXIAL SILICON TRANSISTOR -80V, PNP TRANSISTOR  DESCRIPTION The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.

smd transistor marking SL6

Abstract: SMD MARKING CODE hitachi SMD MARKING CODE sg 2SC5700 2SC5757 HTT1115S MARKING CODE SMD IC DSA003640 Hitachi DSA003640
Contextual Info: HTT1115S Silicon NPN Epitaxial Twin Transistor ADE–208–1440C Z Rev.3 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6(6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700

smd transistor marking SL6

Abstract: SMD MARKING CODE hitachi HTT1213S marking code s21 SMD Transistor marking code e2 SMD Transistor SMD MARKING CODE sg 2SC5700 Hitachi transistor MARKING CODE SMD IC TRANSISTOR SMD fr
Contextual Info: HTT1213S Silicon NPN Epitaxial Twin Transistor ADE-208-1448 Z Preliminary Rev. 0 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6 (6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor

Contextual Info: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor