TRANSISTOR AC 125 EQUIVALENT Search Results
TRANSISTOR AC 125 EQUIVALENT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR | |||
D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs | |||
TMP89FM42LUG |
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8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B | Datasheet | ||
TMP89FS28LFG |
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8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP176-P-2020-0.40D | Datasheet | ||
TMP89FS62BUG |
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8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 | Datasheet |
TRANSISTOR AC 125 EQUIVALENT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AN6525
Abstract: 290MS 74ACxxx
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CD54/74ACTXXX-Serles CD54/74ACXXX-Seiies 10MHz 10MHz, 74ACXXXX 54/74ACTXXXX AN6525 290MS 74ACxxx | |
RCA 7651
Abstract: Difference between LS, HC, HCT devices RCA-CD4000B ICAN-6525
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OCR Scan |
CD54/74ACTXXX-serfes CD54/74ACXXX-series 54/74ACXXXX 54/74ACTXXXX RCA 7651 Difference between LS, HC, HCT devices RCA-CD4000B ICAN-6525 | |
AC/ACT CMOS family characteristics
Abstract: AN6525 Difference between LS, HC, HCT devices 74 Series IC Manual plotter AN-6525 HARRIS PACKAGE LOGIC FCT scr 2 22m four-layer diode act240 harris
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CD54/74ACTXXX-Series AC/ACT CMOS family characteristics AN6525 Difference between LS, HC, HCT devices 74 Series IC Manual plotter AN-6525 HARRIS PACKAGE LOGIC FCT scr 2 22m four-layer diode act240 harris | |
TRANSISTOR BC 157
Abstract: transistor bc 564 NMOS-2 transistor bc 541 transistors BC 543 HARRIS PACKAGE LOGIC FCT TRANSISTOR REPLACEMENT GUIDE bc 574 transistor AN6525 NMOS-2 transistor
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CD74ACTXXXE/M TRANSISTOR BC 157 transistor bc 564 NMOS-2 transistor bc 541 transistors BC 543 HARRIS PACKAGE LOGIC FCT TRANSISTOR REPLACEMENT GUIDE bc 574 transistor AN6525 NMOS-2 transistor | |
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
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Contextual Info: Standard Page 1 of 3 Model : QT3 Type: Transistor Outline Crystal Oscillator Pin Configuration VCC GND OUT CASE ITP 8 4 5 4 2, 6, 7 Equivalent Military Designation: M55310/10 = QT3T, /13 = QT3C Frequency Options 400 Hz to 64 MHz TTL 0.01 Hz to 15 MHz 5 to 15 V |
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M55310/10 QT3C9M-16 | |
Contextual Info: Standard Page 1 of 3 Model : QT116 Type: Transistor Outline Crystal Oscillator Pin Configuration VCC GND OUT CASE ITP 1 9 8 9 4, 13 Equivalent Military Designation: N/A Frequency Options 20 Hz to 80 MHz TTL 0.01 Hz to 15 MHz 5 to 15 V CMOS * 0.03 Hz to 80 MHz |
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QT116 QT116C9M-16 | |
Contextual Info: Standard Page 1 of 3 Model : QT2 Type: Transistor Outline Crystal Oscillator Pin Configuration VCC GND OUT CASE ITP 12 6 5 6 3, 9, 10 Equivalent Military Designation: N/A Frequency Options 400 Hz to 64 MHz TTL 0.01 Hz to 15 MHz 5 to 15 V CMOS * 0.03 Hz to 60 MHz |
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QT2C9M-16 | |
Contextual Info: Standard Page 1 of 3 Model : QT8 Type: Transistor Outline Crystal Oscillator Pin Configuration VCC GND OUT CASE ITP 12 6 5 6 3, 9, 10 Equivalent Military Designation: N/A Frequency Options 20 Hz to 80 MHz TTL 0.01 Hz to 15 MHz 5 to 15 V CMOS * 0.03 Hz to 80 MHz |
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QT8C9M-16 | |
MG400V2YS60AContextual Info: MG400V2YS60A MITSUBISHI IGBT Module MG400V2YS60A High Power Switching Applications Motor Control Applications • The electrodes are isolated from case. • Enhancement−mode • Thermal output terminal TH Equivalent Circuit TH1 C1 TH2 G1 Fo1 E1 E1/C2 G2 |
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MG400V2YS60A 29H30H MG400V2YS60A | |
MG800J2YS50AContextual Info: MG800J2YS50A MITSUBISHI IGBT Module MG800J2YS50A High power switching applications Motor control applications • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal TH Equivalent Circuit TH1 C1 TH2 G1 Fo1 E1 E1/C2 G2 |
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MG800J2YS50A 23F22G MG800J2YS50A | |
MG300Q2YS65HContextual Info: MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 |
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MG300Q2YS65H 2-109C4A MG300Q2YS65H | |
MG200Q2YS65HContextual Info: MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications • High input impedance · Enhancement-mode · The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC |
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MG200Q2YS65H 2-109C4A MG200Q2YS65H | |
MG600Q2YS60AContextual Info: MG600Q2YS60A MITSUBISHI IGBT Module MG600Q2YS60A High Power Switching Applications Motor Control Applications The electrodes are isolated from case. Enhancement−mode Thermal output terminal TH Equivalent Circuit TH1 C1 TH2 G1 Fo1 E1 E1/C2 G2 Fo2 E2 E2 |
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MG600Q2YS60A 23F22G MG600Q2YS60A | |
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Contextual Info: MG400Q1US65H TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H High Power & High Speed Switching Applications • High input impedance · Enhancement-mode · The electrodes are isolated from case. Unit: mm Equivalent Circuit E C E G B JEDEC ― JEITA |
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MG400Q1US65H 2-109F1A | |
MG600Q1US65H
Abstract: diode BY 028
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MG600Q1US65H 2-109F1A 15transportation MG600Q1US65H diode BY 028 | |
GE semiconductor data handbook
Abstract: ge-20 transistor TOSHIBA IGBT DATA BOOK MG300Q2YS65H IC3001
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MG300Q2YS65H 2-109C4A GE semiconductor data handbook ge-20 transistor TOSHIBA IGBT DATA BOOK MG300Q2YS65H IC3001 | |
MG200Q2YS65HContextual Info: MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 |
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MG200Q2YS65H 2-109C4A MG200Q2YS65H | |
Contextual Info: MG400Q1US65H TOSHIBA GTR Module Silicon N Channel IGBT MG400Q1US65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E C E G B JEDEC ― JEITA |
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MG400Q1US65H 2-109F1A | |
Contextual Info: Programmable Controller FP2SH Machine Cybernation High Performance & High Capacity 2012.07 panasonic.net/id/pidsx/global Compact body loaded with functions equivalent to a medium-scale PLC Superior cost performance, and ideal for built-in use FP2SH is a compact PLC series W140 x H100 x D110 mm W5.51 x H3.94 x D4.33 in when using 5-module type loaded with multiple |
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RS232C | |
Contextual Info: MG400V2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG400V2YS60A High Power Switching Applications Motor Control Applications • The electrodes are isolated from case. • Enhancement−mode • Thermal output terminal TH Unit: mm Equivalent Circuit |
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MG400V2YS60A 2-126A2A | |
Contextual Info: MG400V2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG400V2YS60A High Power Switching Applications Motor Control Applications • The electrodes are isolated from case. · Enhancement−mode · Thermal output terminal TH Unit in mm Equivalent Circuit |
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MG400V2YS60A 2-126A1A 125ments, | |
Contextual Info: MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 |
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MG100Q2YS65H 2-95A4A | |
Contextual Info: MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 |
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MG100Q2YS65H 2-95A4A |