TRANSISTOR AC 125 EQUIVALENT Search Results

MG400V2YS60A

Contextual Info: MG400V2YS60A MITSUBISHI IGBT Module MG400V2YS60A High Power Switching Applications Motor Control Applications • The electrodes are isolated from case. • Enhancement−mode • Thermal output terminal TH Equivalent Circuit TH1 C1 TH2 G1 Fo1 E1 E1/C2 G2

MG800J2YS50A

Contextual Info: MG800J2YS50A MITSUBISHI IGBT Module MG800J2YS50A High power switching applications Motor control applications • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal TH Equivalent Circuit TH1 C1 TH2 G1 Fo1 E1 E1/C2 G2

MG600Q2YS60A

Contextual Info: MG600Q2YS60A MITSUBISHI IGBT Module MG600Q2YS60A High Power Switching Applications Motor Control Applications The electrodes are isolated from case. Enhancement−mode Thermal output terminal TH Equivalent Circuit TH1 C1 TH2 G1 Fo1 E1 E1/C2 G2 Fo2 E2 E2

Contextual Info: Programmable Controller FP2SH Machine Cybernation High Performance & High Capacity 2012.07 panasonic.net/id/pidsx/global Compact body loaded with functions equivalent to a medium-scale PLC Superior cost performance, and ideal for built-in use FP2SH is a compact PLC series W140 x H100 x D110 mm W5.51 x H3.94 x D4.33 in when using 5-module type loaded with multiple

MG800J2YS50A

Abstract: RG412
Contextual Info: MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications Unit: mm • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal TH Equivalent Circuit Ｃ1

C264A

Abstract: 7266A 26EA TC74HC266
Contextual Info: TOSHIBA TC74HC266AP/AF TC74HC7266AP/AF TC74HC266 Quad Exclusive Nor Gate Open Drain TC74HC7266 Quad Exclusive Nor Gate The TC74HC266A/7266A are high speed CMOS QUAD EXCLUSIVE NOR GATE fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent

VQE 23F

Abstract: MG600Q2YS60A
Contextual Info: TO SH IBA MG600Q2YS60A TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT MG600Q2YS60A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. Enhancement-Mode Thermal Output Terminal TH EQUIVALENT CIRCUIT

DPDT 6 terminal window switch

Abstract: H3CR-A8E TIMER H3CR-A8 11 pin relay Socket DPDT 6 terminal switch internal diagram H3CR-A H3CR-A8 SPDT 5 pins Relay SPDT relay Y92F 30
Contextual Info: Solid-state Multi-functional Timer Timers H3CR-A DIN 48 x 48-mm State-of-the-art Multifunctional Timer • A wider power supply range reduces the number of timer models kept in stock. • A wide range of applications through six or four operating modes. • Reduced power consumption.

omron H3CR-A8

Abstract: OMRON TIMER H3CR-A8 H3CR-A8 H3CR-A8-301 P3GA-11 Y92F-30 transformerless power supply omron timer H3CR-A
Contextual Info: Solid-state Multi-functional Timers H3CR-A CSM_H3CR-A_DS_E_5_1 Multiple Operating Modes and Multiple Time Ranges. DIN 48 x 48-mm Multifunctional Timer with Wide AC/DC Power Supply Range for Both High and Low Voltages. • A wide AC/DC power supply range greatly reduces the number

Contextual Info: Ordering number : EN 4688 Thick Film Hybrid 1C _ STK392-020 Convergence Correction Circuit Three Channels in a Single Package Maximum Output Current : 6A Overview Package Dimensions The STK392-020 is a hybrid IC for video projector convergence correction. Since this IC integrates three

stk392 100

Abstract: lg projector power supply diagram STK392_020 stk392 120 STK392-000 STK392-020
Contextual Info: Ordering number : EN 4688 Thick Film Hybrid 1C No.4688 // S T K 3 9 2 -0 2 0 Convergence Correction Circuit Three Channels in a Single Package Maximum Output Current : 6A Overview Package Dimensions The STK392-020 is a hybrid IC for video projector convergence correction. Since this IC integrates three

MG1200V1US51

Abstract: set igbt on off Vge
Contextual Info: MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT MG1200V1US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES High Input Impedance Enhancement Mode Electrodes are isolated from case. EQUIVALENT CIRCUIT MAXIMUM RATINGS Ta = 25°C

TRANSISTOR C 460

Abstract: fast recovery Diode 1200V 200A 1di200z-120
Contextual Info: 1DI200Z-120 200A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 HHigh Voltage 内蔵 ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵

TRANSISTOR C 460

Abstract: 1DI300Z-120 M106 TRANSISTOR dt300 DC motor 150 Nm fuji 1di300z-120
Contextual Info: 1DI300Z-120 300A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 HHigh Voltage 内蔵 ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵

Electronic ignitors for HID lamp circuits

Abstract: xenon hid ballast SDB250 xenon ignitor SIDAC DIAC SIDAC ignitor xenon xenon ballast scr firing dc circuits sidac trigger circuit
Contextual Info: STC SIDAC Series DO-15X DO-214 Surface Mount TO-92 Type 70 TO-202 E9 General Description The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

MG180V2YS40

Contextual Info: TOSHIBA MG180V2YS40 TOSHIBA GTR MO DULE SILICON N CHANNEL IGBT MG180V2YS40 HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS EQUIVALENT CIRCUIT El o Çl Cl • The Electrodes are Isolated from Case • High Input Impedance • Includes a Complete Half Bridge in One Package.

MG25Q6ES51

Abstract: MG25Q6ES
Contextual Info: TOSHIBA MG25Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 5Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

TOSHIBA IGBT

Abstract: 800 kw Toshiba AC motor MG900GXH1US53 4 kw Toshiba AC motor diode 900A
Contextual Info: TOSHIBA MG900GXH1US53 TOSHIBA IGBT TENTATIVE DATA MODULE MG900GXH1US53 SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features • High Input Impedance • Enhancement Mode • Electrodes are Isolated from Case EQUIVALENT CIRCUIT

MG25Q6ES51A

Abstract: toshiba Igbts MG25Q6ES51
Contextual Info: TOSHIBA MG25Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 5 Q 6 ES51 A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: E9 DO-15X DO-214 Surface Mount TO-92 Type 70 TO-202 Sidac 79 V to 330 V E9 General Description The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage

K1050E70

Abstract: scr firing gas ignition 1.5 Amps transformer ignitor firing circuit D sidac trigger circuit
Contextual Info: DO-15X DO-214 Surface Mount TO-92 Type 70 TO-202 79 V to 330 V E9 General Description The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage

Xenon Lamp EP 150 Watt

Abstract: 1.5 Amps transformer
Contextual Info: E9 DO-15X DO-214 Surface Mount TO-92 Type 70 TO-202 Sidac 79 V to 330 V E9 General Description The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage

Contextual Info: E9 DO-15X DO-214 Surface Mount TO-92 Type 70 TO-202 Sidac 79 V to 330 V E9 General Description The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage