TRANSISTOR A75 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: • TRANSISTOR MODULE 7«maM3 0005177 357 QCA75A/QCB75A40/60 UL;E76102 M and Q C B 7 5 A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP731,732 OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead

1117 S 3,3 Transistor

Abstract: Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345
Contextual Info: CONTENTS PREFACE Related Document System List of Small Signal Transistors & Diodes Surface Mount Devices . 5 1. Using Device Selection Flowchart . 15 General Purpose Low Frequency Transistor SelectionMethod .

UPA75V

Abstract: upa75 pa75v A75V
Contextual Info: ¿¿PA75V /uP A75V PN P Silicon Epitaxial Compound Transistor Differential Amplifier P N P if c ; - > 'J a > í g - é - h - 7 > ¿ 5 . * ? ft# FEATURES O 1c h i p £*: *>. -<71*. ¿ V b e = 2mV T Y P . <. /PA C KA G E DIM ENSIONS (Unit : mm) E Q T > 7*.

2N6603

Abstract: SILICON SMALL-SIGNAL DICE 2n6603 transistor 2C6603
Contextual Info: MOTOROLA SC -C D IO DE S /O PT O } 34 dË T | t i3t a75SS 00BÖ077 4 | 1 ! 6367255 MOTOROLA SC 34C DIO D ES/O PTO SILICON RF TRANSISTOR DICE (continued) 38077 T ” 3 (" / D ? 2C6603 DIE NO. — NPN LINE SOURCE — RF502.101 This die provides performance equal to or better than that of

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 8 A ISSUE 3 - FEBRUARY 1995. — . FEATURES * * V cev =50V Very Low Saturation Voltages * High Gain * 20 A m p s pulse current

TRANSISTOR REPLACEMENT GUIDE

Abstract: ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE SFC2741 MC1305P
Contextual Info: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.

SFC2741

Abstract: sfc2741c TRANSISTOR REPLACEMENT GUIDE ULN2081A ULN2083 array SFC2741DC TDA1200 LM1307N MC1305P CA1310E
Contextual Info: SPRAGUE T ES T TYPE ULN-2054A DUAL INDEPENDENT DIFFERENTIAL AMPLIFIERS The ULN-2054A is a transistor array consisting of six NPN transistors on a single monolithic chip. The transistors are internally interconnected to form two independent differential am­

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

M15958

Abstract: MARKING C75
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

transistor marking A19

Abstract: A6 marking
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The μPD44321181 is a 2,097,152-word by 18-bit and the μPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

TC518129AF-10

Contextual Info: 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518129A-LV Family is a 1M bit high-speed CMOS Pseudo-Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizes one transistor dynamic memory cell array with CMOS peripheral circuitry to achieve large capacity, high speed accesses, and low

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

Contextual Info: • b S H IÔ E ? M IT S U B IS H I 0G 15125 D G T L 31S *1 1 1 7 3 MITSUBISHI BIPOLAR DIGITAL ICs M 54584P L O G IC 8-UNIT 350mA TRANSISTOR ARRAY DESCRIPTION The M54584P, 8-channel sink driver, consists of 16 NPN PIN CONFIGURATION (TOP VIEW) transistors connected to form high current gain driver pairs

A75-2

Abstract: CA75-2 SMA75-2
Contextual Info: Cascadable Amplifier 5 to 250 MHz A75-2/ SMA75-2 V2 Features Product Image • AVAILABLE IN SURFACE MOUNT • HIGH GAIN: 21.0 dB TYP. • MEDIUM OUTPUT LEVEL: +8.0 dBm (TYP.) Description The A75-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

Contextual Info: Cascadable Amplifier 10 to 500 MHz A75-3/ SMA75-3 V3 Features Product Image • HIGH GAIN: 20.5 dB TYP. • LOW NOISE: 1.7 dB (TYP.) Description The A75-3 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

Contextual Info: Cascadable Amplifier 5 to 500 MHz A75/ SMA75 V3 Features • • • • Product Image HIGH GAIN: 21.0 dB TYP. LOW NOISE: 2.1 dB (TYP.) MEDIUM OUTPUT LEVEL: +9 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +20 VOLTS Description The A75 RF amplifier is a discrete hybrid design, which uses

TRANSISTOR A75

Abstract: A75-2 CA75-2 SMA75-2
Contextual Info: A75-2 / SMA75-2 Cascadable Amplifier 5 to 250 MHz Rev. V2 Features Product Image • AVAILABLE IN SURFACE MOUNT • HIGH GAIN: 21.0 dB TYP. • MEDIUM OUTPUT LEVEL: +8.0 dBm (TYP.) Description The A75-2 RF amplifier is a discrete hybrid design, which uses

TRANSISTOR A75

Abstract: CA75 SMA75
Contextual Info: A75 / SMA75 Cascadable Amplifier 5 to 500 MHz Rev. V3 Features • • • • Product Image HIGH GAIN: 21.0 dB TYP. LOW NOISE: 2.1 dB (TYP.) MEDIUM OUTPUT LEVEL: +9 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +20 VOLTS Description The A75 RF amplifier is a discrete hybrid design, which uses

transistor A753

Abstract: A75-3 CA75-3 MAAM-008317-CA7503 SMA75-3 TRANSISTOR A75
Contextual Info: A75-3 / SMA75-3 Cascadable Amplifier 10 to 500 MHz Rev. V3 Features Product Image • HIGH GAIN: 20.5 dB TYP. • LOW NOISE: 1.7 dB (TYP.) Description The A75-3 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

TRANSISTOR A75

Abstract: transistor A753 A75-3 CA75-3 SMA75-3
Contextual Info: A75-3/SMA75-3 10 TO 500 MHz CASCADABLE AMPLIFIER • HIGH GAIN: 20.5 dB TYP. · LOW NOISE: 1.7 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.) Reverse Isolation