TRANSISTOR A6 Search Results

K1S1616B5M-E

Contextual Info: Advance K1S1616B5M UtRAM Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft - Design target Draft Date Remark May 30, 2002 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K1S1616BCA

Abstract: K1S1616BCA-I
Contextual Info: Preliminary K1S1616BCA UtRAM Document Title 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Draft Date Initial Draft Remark December 12, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K1S32161CC

Abstract: K1S32161CC-I
Contextual Info: Preliminary K1S32161CC UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark July 14, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

TC5816AFT

Abstract: tc5816ft TC5816 toshiba NAND ID code TSOP44-P-400B nv16 NAND memory nand toshiba reference
Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816AFT PRELIMINARY 16Mbit 2M x 8 BIT CMOS NAND EEPROM Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as 264 bytes x 16 pages x 512 blocks. The device has a 264 byte static register which allows

10 switch coded 18 pin ic

Abstract: lm386 audio amplifier PCB diagram transistor 13030 stage play function of ic LM386 LM386 BLOCK DIAGRAM DESCRIPTION LM386 PIN DIAGRAM 8656B HT8656 LM386
Contextual Info: HT8656 Talking Back Features • • • • • Operating voltage: 4.5V~5.5V ADM algorithm DRAM selection: – 64K – 256K Sampling rate selection: – 32Kb – 16Kb Auto stop recording – 0.5 seconds silence is detected – Recording capacity is full •

Contextual Info: LM95245 www.ti.com SNIS148F – OCTOBER 2007 – REVISED MARCH 2008 Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation Technology for 45nm Process Check for Samples: LM95245 FEATURES 1 • • • 2 • • • • •

Contextual Info: TXS0108E www.ti.com . SCES642B – DECEMBER 2007 – REVISED SEPTEMBER 2008 8-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

Contextual Info: RF5125 Proposed 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11b/g/n WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems • Commercial and Consumer Systems

UCD9246

Abstract: compensator
Contextual Info: UCD9246 www.ti.com SLVSA34 – JANUARY 2010 Digital PWM System Controller FEATURES Tool to Simulate, Configure, and Monitor Power Supply Performance 1 • 2 • • • • • • • • • • • • • • • • Fully Configurable Multi-Output and MultiPhase Non-Isolated DC/DC PWM Controller

Contextual Info: MUN2116, MMUN2116L, MUN5116, DTA143TE, DTA143TM3 Digital Transistors BRT R1 = 4.7 kW, R2 = 8 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

Contextual Info: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

Contextual Info: MUN2115, MMUN2115L, MUN5115, DTA114TE, DTA114TM3, NSBA114TF3 Digital Transistors BRT R1 = 10 kW, R2 = 8 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

SRAM 10ns

Abstract: IC 7444 74FCT245 FCT245 ML65245 ML65245CK ML65L245 R4000
Contextual Info: August 1996 ML65245*/ML65L245* High Speed Octal Buffer Transceivers GENERAL DESCRIPTION FEATURES The ML65245 and ML65L245 are non-inverting octal transceivers. The high operating frequency 50MHz driving a 50pF load and low propagation delay (ML65245 – 1.7ns, ML65L245 – 2ns) make them ideal for very high

UCD9240

Contextual Info: UCD9240 www.ti.com. SLUS766C – JULY 2008 – REVISED NOVEMBER 2008 Digital PWM System Controller FEATURES 1

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

TPS51601A

Contextual Info: TPS51640A, TPS59640, TPS59641 SLUSAQ2 – JANUARY 2012 www.ti.com Dual-Channel 3-Phase CPU/1-Phase GPU SVID, D-CAP+ Step-Down Controller for IMVP-7 VCORE with Two Integrated Drivers FEATURES 1 • • • • • 2 • • • • • • • • •

StrongARM SA-1100

Abstract: S1100 UCB1100 UCB1200
Contextual Info: Intel StrongARM® SA-1100 Microprocessor for Embedded Applications Brief Datasheet Product Features The Intel® StrongARM® SA-1100 Microprocessor SA-1100 is a device targeted to provide high-performance computing to embedded applications but at consumer electronics pricing with MIPS-per-dollar and MIPS-perwatt advantages. The SA-1100 incorporates a 32-bit StrongARM® RISC

UDN2916

Abstract: A6219DS L6219DS L6219DS-T L6219DSTR-T PBL3717 UC3770
Contextual Info: L6219DS Dual Full-Bridge PWM Motor Driver Not for New Design These parts are in production but have been determined to be NOT FOR NEW DESIGN. This classification indicates that sale of this device is currently restricted to existing customer applications.

M08A

Abstract: MTC08 NM93C46A
Contextual Info: NM93C46A 1K-Bit Serial CMOS EEPROM MICROWIRE Synchronous Bus General Description Features The NM93C46A is 1,024 bits of CMOS nonvolatile, electrically erasable memory available as either 64 16-bit registers or 128 8bit registers. (The organization is determined by the status of the

Contextual Info: Ordering number : ENA0683C LE24C162M CMOS IC Two Wire Serial Interface EEPROM 16k EEPROM Overview The LE24C162M is a 2-wire serial interface EEPROM. It realizes high speed and a high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. This device is compatible with I2C memory protocol,

amd 15h power

Abstract: AM29LV640
Contextual Info: Implementing a Common Layout for AMD MirrorBitTM and Intel StrataFlashTM Memory Devices Application Note Overview This document describes the benefits of designing with AMD MirrorBit Flash memory and the ease with which system designers can layout a board to accommodate high-density flash devices from both AMD and

MJE15003

Abstract: opa454
Contextual Info: OPA454 www.ti.com . SBOS391A – DECEMBER 2007 – REVISED DECEMBER 2008 High-Voltage 100V , High-Current (50mA) OPERATIONAL AMPLIFIERS, G = 1 Stable

Contextual Info: TSC2003 TSC 2003 TSC2 003 SBAS162E – NOVEMBER 2000 – REVISED JANUARY 2005 I2C TOUCH SCREEN CONTROLLER DESCRIPTION FEATURES ● 2.5V TO 5.25V OPERATION ● INTERNAL 2.5V REFERENCE ● DIRECT BATTERY MEASUREMENT 0.5V TO 6V ● ON-CHIP TEMPERATURE MEASUREMENT

MB9A340NA

Abstract: MB9AF342LA MB9AF342MA
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00039-2v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9A340NA Series MB9AF341LA/MA/NA, MB9AF342LA/MA/NA, MB9AF344LA/MA/NA  DESCRIPTION The MB9A340NA Series are highly integrated 32-bit microcontrollers dedicated for embedded controllers