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Contextual Info: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492
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2SC5170
Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5170 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5170 is a silicon NPN epitaxial type transistor. It is designed for
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2sc5170100hz110mvtypx10-3+5le300mitsubishi vcbtransistor common base amplifiercommon base amplifier circuitdual transistor
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C2E1
Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 (M) QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max
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qca75a/qcb75a40/60e76102qca75aqcb75a+1394maxvcex400/600v32max31max110tabic75ac2e1qca75a40qca75a60qcb75a40qcb75a60diode a60ib25ab
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C2E1
Abstract: transistor QCA75A60 QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX
Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 (M) QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max
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qca75a/qcb75a40/60e76102qca75aqcb75a+1294maxvcex400/600v32max31max110tabic75ac2e1transistor qca75a60qca75a40qca75a60qcb75a40qcb75a60
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E2 diode
Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 (M) QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1
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MARKING A6C SOT-23
Abstract: transistor A6A SOT-23 marking a6c sot23 marking A6g sot23 marking A6L MMUN2111LT1 MMUN2111LT3 MMUN2112LT3 MMUN2113LT1 MMUN2114LT1
Contextual Info: MMUN2111LT1 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias
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mmun2111lt1ot-23mmun2132lt1mmun2133lt1+13mmun2134lt1mmun2111lt1/mmun2112lt1/mmun2113lt1mmun2114lt1mmun2115lt1/mmun2116lt1mmun2130lt1/mmun2131lt1/mmun2132lt1marking a6c sot-23transistor a6asot-23 marking a6csot23 marking a6gsot23 marking a6lmmun2111lt3mmun2112lt3mmun2113lt1
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ksp8097
Abstract: 2N5088
Contextual Info: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • CoHector-Emitter Voltage: V c e o “ 2 5 V • Collector Dissipation :P C max a625mW ABSOLUTE MAXIMUM RATINGS (TA=25T) C h aracteristic Collector-Base Voltage Collector-Em ttter Voltage Em itter-Base Voltage
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transistor A6A
Abstract: A6k SURFACE MOUNT transistor a6f MMUN2115 a6j* pnp transistor a6j datasheet transistor A6j MMUN2112 MMUN2113 MMUN2114
Contextual Info: MMUN2111…MMUN2134 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias
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mmun2111mmun2134ot-23mmun2133+13mmun2111/mmun2112/mmun2113mmun2114mmun2115/mmun2116mmun2130/mmun2131/mmun2132transistor a6aa6k surface mounttransistor a6fmmun2115a6j* pnp transistora6j datasheettransistor a6jmmun2112mmun2113
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52
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transistor A6A
Abstract: transistor a6f a6j* pnp transistor MARKING A6C SOT-23 SOT-23 A6A k 49 transistor code A6J A6k SURFACE MOUNT MMUN2111 MMUN2112
Contextual Info: MMUN2111 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting
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mmun2111ot-23mmun2132mmun2133+14mmun2134mmun2111/mmun2112/mmun2113mmun2114mmun2115/mmun2116mmun2130/mmun2131/mmun2132transistor a6atransistor a6fa6j* pnp transistormarking a6c sot-23sot-23 a6ak 49 transistorcode a6ja6k surface mountmmun2112
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transistor A6A
Abstract: a6j* pnp transistor transistor a6f A6F SURFACE MOUNT A6k SURFACE MOUNT MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115
Contextual Info: MMUN2111…MMUN2134 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias
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mmun2111mmun2134ot-23mmun2133+12mmun2111/mmun2112/mmun2113mmun2114mmun2115/mmun2116mmun2130/mmun2131/mmun2132transistor a6aa6j* pnp transistortransistor a6fa6f surface mounta6k surface mountmmun2112mmun2113mmun2115
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A6k SURFACE MOUNT
Abstract: transistor A6j MMUN2115 a6j* pnp transistor transistor a6f MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2116
Contextual Info: MMUN2111…MMUN2134 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias
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mmun2111mmun2134ot-23mmun2133+12mmun2111/mmun2112/mmun2113mmun2114mmun2115/mmun2116mmun2130/mmun2131/mmun2132a6k surface mounttransistor a6jmmun2115a6j* pnp transistortransistor a6fmmun2112mmun2113mmun2116
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a6j* pnp transistor
Abstract: marking A6f MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1 MMUN2132RLT1 MMUN2133RLT1 MMUN2134RLT1 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
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mmun2111rlt1mmun2112rlt1mmun2113rlt1mmun2114rlt1+8mmun2115rlt1mmun2116rlt1mmun2130rlt1mmun2131rlt1mmun2132rlt1mmun2133rlt1a6j* pnp transistormarking a6f
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t416
Abstract: 817 CN
Contextual Info: DISCRETE SEMICONDUCTORS PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE
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SOT223 marking SG
Abstract: MARKING SG SOT223 marking sot223 GY
Contextual Info: DISCRETE SEMICONDUCTORS SHEET PZT4403 PNP switching transistor Product specification Philips Semiconductors 1999 May 10 PHILIPS Philips Semiconductors Product specification PNP switching transistor FEATURES PZT4403 PINNING • High current max. 600 mA PIN
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pzt4403ot223pzt4401zt4403+415002/00/01/pp8sot223 marking sgmarking sg sot223marking sot223 gy
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D1133
Abstract: transistor D1133 EQUIVALENT number transistor D1133 EQUIVALENT CIRCUIT transistor D1133 7405AN D1133 EQUIVALENT CIRCUIT truth table inverter gate 74 Inverter Gates FJH321 FJH321A
Contextual Info: T.T.L. SEXTUPLE SINGLE INPUT INVERTER GATES FIH 3 2 I FJH3 2 IA Corresponds to 74 Series type 7405AIM P R O V IS IO N A L D A T A These d evices are transistor-transistor logic sextuple single-input inverter gates, with a single-ended open collector output transistor, in the FJ s e r ie s of integrated
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fih32ifjh32ia7405anfjh321+10o-116fjh321-paged1133transistor d1133 equivalent numbertransistor d1133 equivalent circuittransistor d1133d1133 equivalent circuittruth table inverter gate 74inverter gatesfjh321a
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PN2222A
Abstract: 1041A
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PN2222A NPN switching transistor 1999 May 21 Product specification Supersedes data of 1997 May 05 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PN2222A FEATURES
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Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BCV64B PNP general purpose double transistor Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor
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A6T TRANSISTOR
Abstract: transistor a6t A6t SOT23 sot23 marking A6T
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA144TLT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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ldta144tlt1got-23a6t transistortransistor a6t+2a6t sot23sot23 marking a6t
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LDTA123TLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA123TLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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LDTA114YLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA114YLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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transistor A6U
Abstract: radio a6u LDTA115TLT1G 100MHZ
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA115TLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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ldta115tlt1got-23transistor a6uradio a6u+1100mhz
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A6k SURFACE MOUNT
Abstract: transistor A6K LDTA143ZLT1G A6K resistor LDTA143ZLT3G A6K MARKING
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA143ZLT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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ldta143zlt1got-23a6k surface mounttransistor a6k+3a6k resistorldta143zlt3ga6k marking
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