TRANSISTOR A32 Search Results

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

bf998 Mop

Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
Contextual Info: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

buz 385

Abstract: buz385 4900 SIEMENS
Contextual Info: SIEMENS BUZ 385 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 385 Vos 500V b 9A RdSion 0.8 n Package Ordering Code TO-218AA C67078-A3210-A2 Maximum Ratings Parameter Symbol Drain source voltage Vds V DGR Drain-gate voltage

BUZ 382

Contextual Info: SIEMENS BUZ 382 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type Vos b BUZ 382 400 V 12.5 A %S on 0.4 w Package Ordering Code TO-218AA C67078-A3207-A2 Maximum Ratings Parameter Symbol Drain source voltage Vds Drain-gate voltage

ld 1088 bs

Abstract: k 1094 transistor 1/ld 1088 bs
Contextual Info: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 380 Vbs 1000 V 5.5 A ^bsfon 2w Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage Vbs V DGR Drain-gate voltage

MC706

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 380 • N channel • Enhancement mode • FREDFET Type V'ds h ^DS on Package 1> Ordering Code BUZ 380 1000 V 5.5 A 2.0 n TO-218 AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 30 "C

STT 3 SIEMENS

Abstract: TRANSISTOR 2FE ScansUX7 C67078-A3209-A2
Contextual Info: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 384 Vds 500 V DS on 10.5 A 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage ^DS V DGR Drain-gate voltage

Contextual Info: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FR ED FET Type Vos BUZ 384 500 V 4> 10.5 A *bs on 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage Vos Drain-gate voltage

transistor k 385

Abstract: transistor buz 36 C67078-A3210-A2
Contextual Info: BUZ 385 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 385 500 V 9A 0.8 Ω TO-218 AA C67078-A3210-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS

C67078-A3209-A2

Abstract: buz384
Contextual Info: BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 384 500 V 10.5 A 0.6 Ω TO-218 AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage

transistor c37

Abstract: a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 TRANSISTOR a31 2N3904 A32 2N3904 b11
Contextual Info: BIPOLAR TRANSISTOR PARTS LIST ALPHA-NUMERIC INDEX OF S S T /S M T SOT-23 , UMT (SOT-323), MPT (SOT-89) AND TO-92 PACKAGED BIPOLAR TRANSISTORS PART NUMBER PART NUMBER DIE No. DIE No. PAGE PAGE PAGE PAGE 2 2N2925 28 C22 61 2N3703 31 A32 37 BCW65B BCW65C 22

Contextual Info: SIEMENS BUZ 382 SIPMOS Power Transistor • N channel • Enhancement mode V'IOys6 • FREDFET 3 Pin 1 Pin 2 Type BUZ 382 Vbs 400 V b 12.5 A flbSfon 0.4 w Pin 3 D G S Package Ordering Code TO-218AA C67078-A3207-A2 Maximum Ratings Parameter Symbol Drain source voltage

transistor BUZ 40

Abstract: BUZ 382 C67078-A3207-A2
Contextual Info: BUZ 382 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 382 400 V 12.5 A 0.4 Ω TO-218 AA C67078-A3207-A2 Maximum Ratings Parameter Symbol Drain source voltage

buz 380 transistor

Abstract: transistor buz 380 C67078-A3205-A2
Contextual Info: BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 380 1000 V 5.5 A 2Ω TO-218 AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS

Contextual Info: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode ' • FR ED FET fé YW5S 3 Pin 1 Pin 2 Type BUZ 380 Vfes 1000 V b flbsfon 2w 5.5 A Pin 3 D G S Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage

Contextual Info: SIEMENS BUZ 385 SIPMOS Power Transistor • N channel • Enhancement mode V’ICfc'58 2 é 3 • FREDFET Pirn Pin 2 G Type BUZ 385 Vds 500 V 1D 9A ^DS on 0.8 Q Pin 3 D S Package Ordering Code TO-218AA C67078-A3210-A2 Maximum Ratings Parameter Symbol Drain source voltage

SGA-3263

Abstract: DC-5500 mmic a32
Contextual Info: Preliminary Product Description Stanford Microdevices’ SGA-3263 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

mmic a32

Abstract: SGA-3263 SGA-3263-TR1
Contextual Info: Preliminary Product Description SGA-3263 Stanford Microdevices’ SGA-3263 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-3286 Stanford M icrodevices’ SG A-3286 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

TRANSISTOR a32

Contextual Info: Die no. A-32 PNP small signal transistor These are epitaxial planar PNP silicon transistors. Features Dimensions U nits: mm • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCE0 =40 V (min) at

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

Contextual Info: 131,072 WORDS X 8 BIT CMOS PRELIMINARY PSEUDO STATIC RAM DESCRIPTION The TC518128A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518128A-LV Family utilizing one transistor dynamic memory’ cell with CMOS