TRANSISTOR A1227 Search Results

TRANSISTOR A1227 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR A1227 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Marking Code ES SOT-89 Abstract: DN5SW dn5s Contextual Info: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing	Original	DN3535 DN3535 O-243AA OT-89) O-243, DSFP-DN3535 A122707 Marking Code ES SOT-89 DN5SW dn5s	PDF
Contextual Info: TP2424 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This	Original	TP2424 TP2424 O-243AA OT-89) O-243, DSFP-TP2424 A122707	PDF
Contextual Info: TN2501 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This	Original	TN2501 110pF TN2501 O-243AA OT-89) O-243, DSFP-TN2501 A122707	PDF
TP5L Contextual Info: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination	Original	TP2502 125pF TP2502 O-243AA OT-89) O-243, DSFP-TP2502 A122707 TP5L	PDF
TN2504 Abstract: SOT89 FET marking TN5LW Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This	Original	TN2504 125pF TN2504 O-243AA OT-89) O-243, DSFP-TN2504 A122707 SOT89 FET marking TN5LW	PDF
jedec package TO-243AA Abstract: FET marking code 365 Contextual Info: TN2435 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This	Original	TN2435 150pF TN2435 O-243AA OT-89) O-243, DSFP-TN2435 A122707 jedec package TO-243AA FET marking code 365	PDF
Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This	Original	TN0104 TN0104 O-243AA OT-89) O-243, DSFP-TN0104 A122707	PDF
Contextual Info: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This	Original	TP2540 125pF TP2540 O-243AA OT-89) O-243, DSFP-TP2540 A122707	PDF
SOT89 FET marking Abstract: SOT 213 MARKING diode sot-89 marking code FET SOT-89 N-Channel sot-89 fet Contextual Info: TN2535 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This	Original	TN2535 125pF TN2535 O-243AA OT-89) O-243, DSFP-TN2535 A122707 SOT89 FET marking SOT 213 MARKING diode sot-89 marking code FET SOT-89 N-Channel sot-89 fet	PDF
sot-89 na Abstract: Marking N8 diode sot-89 marking code marking oc diode sot89 Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This	Original	TP2435 TP2435 O-243AA OT-89) O-243, DSFP-TP2435 A122707 sot-89 na Marking N8 diode sot-89 marking code marking oc diode sot89	PDF
Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This	Original	TN2504 125pF O-243AA OT-89) O-243, DSFP-TN2504 A122707	PDF
JE1100 Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466 Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices	OCR Scan		PDF
uPC1342 Abstract: UPC1342V b1336 transistor C 2987A A1227A C2987A PC1342V UC1342 D1289 transistor 2987A Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT /¿ P C I 3 4 2 V 5 0 to 110 W POWER AMPLIFIER DRIVER DESCRIPTION /jPC1342V is a integrated m onolithic circuit designed for 50 W to H O W class H iFi audio power am plifier and consists of a input differential amplifier, a predhver circuit, a driver circuit and a over current protection circuit.	OCR Scan	uPC1342V PC1342V uPC1342 b1336 transistor C 2987A A1227A C2987A PC1342V UC1342 D1289 transistor 2987A	PDF
ZENER SOT89 Abstract: transistor a1227 Contextual Info: A1225, A1227, and A1229 Hall Effect Latch for High Temperature Operation Features and Benefits Description ▪ Symmetrical switchpoints ▪ Superior temperature stability ▪ Operation from unregulated supply ▪ Open-drain 25 mA output ▪ Reverse Battery protection	Original	A1225, A1227, A1229 ZENER SOT89 transistor a1227	PDF

A1229 Abstract: a1227 transistor a1227 A1225 C1418 A1225L A122x a1227llttr Contextual Info: A1225, A1227, and A1229 Hall Effect Latch for High Temperature Operation Features and Benefits Description ▪ Symmetrical switchpoints ▪ Superior temperature stability ▪ Operation from unregulated supply ▪ Open-drain 25 mA output ▪ Reverse Battery protection	Original	A1225, A1227, A1229 A1229 a1227 transistor a1227 A1225 C1418 A1225L A122x a1227llttr	PDF
Contextual Info: A1225, A1227, and A1229 Hall Effect Latch for High Temperature Operation Features and Benefits Description Symmetrical switchpoints Superior temperature stability Operation from unregulated supply Open-drain 25 mA output Reverse Battery protection Activate with small, commercially available	Original	A1225, A1227, A1229	PDF
GH-027 Abstract: A1227 A3187 Contextual Info: A3185, A3187, A3188, and A3189 Protected Quad Driver with Fault Detection and Sleep Mode Discontinued Product This device is no longer in production. The device should not be purchased for new design applications. Samples are no longer available. Date of status change: October 31, 2005	Original	A3185, A3187, A3188, A3189 A1225 A1227 A1229 GH-027 A1227 A3187	PDF
A1225 Abstract: A1225LLTTK-T transistor a1227 A1227LLTTK-T 140 hall Contextual Info: A1225, A1227, and A1229 Hall Effect Latch for High Temperature Operation Features and Benefits Description ▪ Symmetrical switchpoints ▪ Superior temperature stability ▪ Operation from unregulated supply ▪ Open-drain 25 mA output ▪ Reverse Battery protection	Original	A1225, A1227, A1229 A1225 A1225LLTTK-T transistor a1227 A1227LLTTK-T 140 hall	PDF
transistor a1227 Abstract: A1227 A1225 A1229 transistor a1225 A1225-DS A1225LUA-T A1227LLTTR-T Contextual Info: A1225, A1227, and A1229 Hall Effect Latch for High Temperature Operation Features and Benefits Description ▪ Symmetrical switchpoints ▪ Superior temperature stability ▪ Operation from unregulated supply ▪ Open-drain 25 mA output ▪ Reverse Battery protection	Original	A1225, A1227, A1229 transistor a1227 A1227 A1225 transistor a1225 A1225-DS A1225LUA-T A1227LLTTR-T	PDF
ecg semiconductors master replacement guide Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei	Original		PDF
A1306 TRANSISTOR Abstract: A1273 A1266 transistor a1266 a1273 transistor a1232 transistor A1267 transistor a1276 a1273 transistor scheme a1273 y transistor Contextual Info: 80C186EC/80C188EC Microprocessor User’s Manual 80C186EC/80C188EC Microprocessor User’s Manual 1995 Order Number 272047-003 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including	Original	80C186EC/80C188EC 82C59A Index-10 A1306 TRANSISTOR A1273 A1266 transistor a1266 a1273 transistor a1232 transistor A1267 transistor a1276 a1273 transistor scheme a1273 y transistor	PDF
transistor A1011 Abstract: a1273 transistor scheme A1266 a1273 a1273 transistor DATA a1273 transistor a1232 transistor a1266 A1306 TRANSISTOR transistor A1267 Contextual Info: 80C186EC/80C188EC Microprocessor User’s Manual 80C186EC/80C188EC Microprocessor User’s Manual 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions	Original	80C186EC/80C188EC 82C59A Index-10 transistor A1011 a1273 transistor scheme A1266 a1273 a1273 transistor DATA a1273 transistor a1232 transistor a1266 A1306 TRANSISTOR transistor A1267	PDF

TRANSISTOR A1227 Search Results

TRANSISTOR A1227 Result Highlights (5)

TRANSISTOR A1227 Datasheets Context Search

Marking Code ES SOT-89

TP5L

TN2504

jedec package TO-243AA

SOT89 FET marking

sot-89 na

JE1100

uPC1342

ZENER SOT89

A1229

GH-027

A1225

transistor a1227

ecg semiconductors master replacement guide

A1306 TRANSISTOR

transistor A1011