TRANSISTOR A114 ESD Search Results

TRANSISTOR A114 ESD Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR A114 ESD Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
39SF512 Abstract: 39vf020 39SF010 37vf040 39VF512 39VF010 A114 transistor 39VF040 transistor A114 27SF020 Contextual Info: SST Product Reliability SST Product Reliability INTRODUCTION The SST quality policy is: To satisfy customer requirements by providing products and services that are cost effective, on schedule, and with zero nonconformances to specifications. SST is developing a quality system in accordance with the	Original	ISO-9001 S72023-00-000 SF3-33A 39VF040/39VF020/39VF010/39VF512 39SF512 39vf020 39SF010 37vf040 39VF512 39VF010 A114 transistor 39VF040 transistor A114 27SF020	PDF
Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant	Original	2N7002K JESD22 OT-23	PDF
transistor A114 Abstract: A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101 JESD22 Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant	Original	2N7002K JESD22 OT-23 transistor A114 A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101	PDF
transistor a114 esd Abstract: TRANSISTOR A114 A114 transistor 2n7002k Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant	Original	2N7002K 2N7002K JESD22 OT-23 transistor a114 esd TRANSISTOR A114 A114 transistor	PDF
transistor A114 Abstract: 2n7002k transistor a114 esd Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant	Original	2N7002K 2N7002K JESD22 OT-23 transistor A114 transistor a114 esd	PDF
Contextual Info: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •	Original	T2G6003028-FL T2G6003028-FL JESD22-A114 2002/95/EC C15H12Br402) J-STD-020. EAR99	PDF
transistor 4242 dm Abstract: MBRM130L NCP1800 NCP1800DM41R2 NCP1800DM41R2G NCP1800DM42R2 NTGS3441T1 NTHD4P02FT1 cccv regulator Contextual Info: NCP1800 Single−Cell Lithium Ion Battery Charge Controller The NCP1800 is a constant current, constant voltage CCCV lithium ion battery charge controller. The external sense resistor sets the full charging current, and the termination current is 10% of the	Original	NCP1800 NCP1800 NCP1800/D transistor 4242 dm MBRM130L NCP1800DM41R2 NCP1800DM41R2G NCP1800DM42R2 NTGS3441T1 NTHD4P02FT1 cccv regulator	PDF
Contextual Info: NCP1800 Single−Cell Lithium Ion Battery Charge Controller The NCP1800 is a constant current, constant voltage CCCV lithium ion battery charge controller. The external sense resistor sets the full charging current, and the termination current is 10% of the	Original	NCP1800 NCP1800 NCP1800/D	PDF
transistor A114 Abstract: A114 A115 FPD1000V JESD22 A114 transistor Contextual Info: PRELIMINARY • FEATURES 1.8 GHz ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias 1W POWER PHEMT	Original	FPD1000V FPD1000V transistor A114 A114 A115 JESD22 A114 transistor	PDF
Contextual Info: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T2G4005528-FS T2G4005528-FS	PDF
A114 Abstract: A115 FPD4000V JESD22 Contextual Info: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Linear Output Power ♦ 11 dB Power Gain ♦ Useable Gain to 9 GHz ♦ 47 dBm Output IP3 ♦ 19 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD4000V	Original	FPD4000V FPD4000V A114 A115 JESD22	PDF
A114 Abstract: A115 FPD2000V JESD22 Au Sn eutectic Contextual Info: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V	Original	FPD2000V FPD2000V A114 A115 JESD22 Au Sn eutectic	PDF
transistor A114 Abstract: transistor a114 diagram A114 transistor transistor a115 Contextual Info: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V	Original	FPD2000V FPD2000V transistor A114 transistor a114 diagram A114 transistor transistor a115	PDF
transistor a114 diagram Abstract: A114 A115 FPD1000V JESD22 transistor A114 transistor a115 Contextual Info: PRELIMINARY • FEATURES 1.8 GHz ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias 1W POWER PHEMT	Original	FPD1000V FPD1000V transistor a114 diagram A114 A115 JESD22 transistor A114 transistor a115	PDF

18w transistor Contextual Info: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T2G6001528-Q3 T2G6001528-Q3 TQGaN25 18w transistor	PDF
CRCW0805100F100 Abstract: Ghz dB transistor Contextual Info: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •	Original	T2G6000528-Q3 T2G6000528-Q3 CRCW0805100F100 Ghz dB transistor	PDF
Contextual Info: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T2G6001528-Q3 T2G6001528-Q3 TQGaN25	PDF
transistor A114 Abstract: a114 transistor transistor a114 esd 2N7002KW Contextual Info: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant	Original	2N7002KW 2N7002KW JESD22 OT-323 transistor A114 a114 transistor transistor a114 esd	PDF
T2G405528-FSEVB2 Contextual Info: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T2G4005528-FS T2G4005528-FS TQGaN25 T2G405528-FSEVB2	PDF
UM3750 Abstract: A114 A115 FPD10000V JESD22 wedge Filtronic Contextual Info: PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS • • PERFORMANCE 3.5 GHz (802.16-2004 WiMAX Modulation) ♦ 30 dBm Output Power, < 2.5% EVM ♦ 9.5 dB Power Gain ♦ Class AB Efficiency 10% (10V / 1A IDQ) GATE DRAIN ♦ Class B Efficiency 18% (8V / 300 mA IDQ)	Original	FPD10000V FPD10000V UM3750 A114 A115 JESD22 wedge Filtronic	PDF
transistor A114 Abstract: NCP3065 application NCP3065 A114 transistor NCP3065DR2G transistor a115 NCP3065MNTXG PWM IC 14 PIN FOR LED AND SOLAR DRIVER APPLICATION a114 transistor replacement NCV3065 Contextual Info: NCP3065, NCV3065 Up to 1.5 A Constant Current Switching Regulator for LEDs The NCP3065 is a monolithic switching regulator designed to deliver constant current for powering high brightness LEDs. The device has a very low feedback voltage of 235 mV nominal which is	Original	NCP3065, NCV3065 NCP3065 transistor A114 NCP3065 application A114 transistor NCP3065DR2G transistor a115 NCP3065MNTXG PWM IC 14 PIN FOR LED AND SOLAR DRIVER APPLICATION a114 transistor replacement NCV3065	PDF
Contextual Info: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant	Original	2N7002KW JESD22 OT-323	PDF
Contextual Info: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •	Original	T2G6000528-Q3 T2G6000528-Q3 TQGaN25	PDF
Transistor p1f Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS Contextual Info: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website	Original	FPD4000AS FPD4000AS 200mA Transistor p1f MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS	PDF

TRANSISTOR A114 ESD Search Results

TRANSISTOR A114 ESD Result Highlights (5)

TRANSISTOR A114 ESD Datasheets Context Search

39SF512

transistor A114

transistor a114 esd

transistor A114

transistor 4242 dm

transistor A114

A114

A114

transistor A114

transistor a114 diagram

18w transistor

CRCW0805100F100

transistor A114

T2G405528-FSEVB2

UM3750

transistor A114

Transistor p1f