TRANSISTOR A114 DIAGRAM Search Results

NL27WZ14DFT2G

Abstract: A114 NL27WZ04 NL27WZ14 54 SC59-6
Contextual Info: NL27WZ14 Dual Schmitt-Trigger Inverter MARKING DIAGRAMS 6 6 M The NL27WZ14 is a high performance dual inverter with Schmitt−Trigger inputs operating from a 1.65 to 5.5 V supply. Pin configuration and function are the same as the NL27WZ04, but the inputs have hysteresis and, with its Schmitt trigger function, the

Contextual Info: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •

transistor 4242 dm

Abstract: MBRM130L NCP1800 NCP1800DM41R2 NCP1800DM41R2G NCP1800DM42R2 NTGS3441T1 NTHD4P02FT1 cccv regulator
Contextual Info: NCP1800 Single−Cell Lithium Ion Battery Charge Controller The NCP1800 is a constant current, constant voltage CCCV lithium ion battery charge controller. The external sense resistor sets the full charging current, and the termination current is 10% of the

Contextual Info: NCP1800 Single−Cell Lithium Ion Battery Charge Controller The NCP1800 is a constant current, constant voltage CCCV lithium ion battery charge controller. The external sense resistor sets the full charging current, and the termination current is 10% of the

transistor A114

Abstract: A114 A115 FPD1000V JESD22 A114 transistor
Contextual Info: PRELIMINARY • FEATURES 1.8 GHz ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias 1W POWER PHEMT

Contextual Info: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

A114

Abstract: A115 FPD4000V JESD22
Contextual Info: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Linear Output Power ♦ 11 dB Power Gain ♦ Useable Gain to 9 GHz ♦ 47 dBm Output IP3 ♦ 19 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD4000V

A114

Abstract: A115 FPD2000V JESD22 Au Sn eutectic
Contextual Info: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V

transistor A114

Abstract: transistor a114 diagram A114 transistor transistor a115
Contextual Info: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V

transistor a114 diagram

Abstract: A114 A115 FPD1000V JESD22 transistor A114 transistor a115
Contextual Info: PRELIMINARY • FEATURES 1.8 GHz ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias 1W POWER PHEMT

Contextual Info: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •

18w transistor

Contextual Info: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

CRCW0805100F100

Abstract: Ghz dB transistor
Contextual Info: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •

Contextual Info: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

UM3750

Abstract: A114 A115 FPD10000V JESD22 wedge Filtronic
Contextual Info: PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS • • PERFORMANCE 3.5 GHz (802.16-2004 WiMAX Modulation) ♦ 30 dBm Output Power, < 2.5% EVM ♦ 9.5 dB Power Gain ♦ Class AB Efficiency 10% (10V / 1A IDQ) GATE DRAIN ♦ Class B Efficiency 18% (8V / 300 mA IDQ)

transistor A114

Abstract: NCP3065 application NCP3065 A114 transistor NCP3065DR2G transistor a115 NCP3065MNTXG PWM IC 14 PIN FOR LED AND SOLAR DRIVER APPLICATION a114 transistor replacement NCV3065
Contextual Info: NCP3065, NCV3065 Up to 1.5 A Constant Current Switching Regulator for LEDs The NCP3065 is a monolithic switching regulator designed to deliver constant current for powering high brightness LEDs. The device has a very low feedback voltage of 235 mV nominal which is

Contextual Info: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •

Contextual Info: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: T1G4004532-FS 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: T1G2028536-FL 285W, 36V DC – 2 GHz, GaN RF Power Transistor Applications • • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers GPS Communications Avionics

Contextual Info: T1G6001032-SM 10W, 32V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: T1G4004532-FL 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features