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GRT155R61A106ME13D
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Murata Manufacturing Co Ltd
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0402 (1005M) X5R (EIA) 10Vdc 10μF±20% |
PDF
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GRT155R61A106ME13J
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Murata Manufacturing Co Ltd
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0402 (1005M) X5R (EIA) 10Vdc 10μF±20% |
PDF
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2SC6026MFV
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
Datasheet
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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
Datasheet
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
Datasheet
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