TRANSISTOR A1 T Search Results

KTX212U

Contextual Info: SEMICONDUCTOR KTX212U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C ・With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.

eiaj SC70

Abstract: mo-203aa a 4x transistor
Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-3 0.20 (0.008) M P3.049 VIEW C C 3 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL b INCHES SYMBOL 6 5 4 CL CL E1 E 1 2 3 e e1 D C CL A A2 SEATING PLANE A1 -C- PLATING

a 4x transistor

Abstract: MO203AB SC70-6 MO-203-AB
Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-6 0.20 (0.008) M P6.049 VIEW C C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL INCHES e b SYMBOL 6 5 4 CL CL E1 E 1 2 3 e1 C D CL A A2 SEATING PLANE A1 -C- WITH

smd transistor 351A

Contextual Info: SFH6943A Vishay Semiconductors Optocoupler, Phototransistor Output, SOT-223/10, Quad Channel FEATURES • Transistor optocoupler in SOT-223/10 package • End stackable, 1.27 mm spacing • Low current input • Good CTR linearity versus forward current A1

GSBC848

Contextual Info: ISSUED DATE :2005/06/08 REVISED DATE : GSBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The GSBC848 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits. Package Dimensions REF. A A1 A2

GSBC858

Contextual Info: ISSUED DATE :2005/06/08 REVISED DATE : GSBC858 PNP EPITAXIAL PLANAR TRANSISTOR Description The GSBC858 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits. Package Dimensions REF. A A1 A2

GSBC807

Contextual Info: ISSUED DATE :2005/06/08 REVISED DATE : GSBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The GSBC807 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Package Dimensions REF. A A1 A2 D E HE

Contextual Info: SEMICONDUCTOR KRC651U~KRC656U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・With Built-in Bias Resistors. 1 5 DIM A A1 B A 2 C ・Reduce a Quantity of Parts and Manufacturing Process.

GLA14

Contextual Info: ISSUED DATE :2002/10/28 REVISED DATE :2006/05/10C G L A1 4 NPN EPITAXIAL PLANAR T RANSISTOR Description The GLA14 is a Darlington amplifier transistor designed for applications requiring extremely high current gain. Package Dimensions SOT-223 REF. A C D E

754f

Contextual Info: SEMICONDUCTOR KRA751F~KRA754F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES 1 6 2 5 A ・Simplify Circuit Design. A1 C ・With Built-in Bias Resistors. C ・Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRA757U~KRA759U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors 1 6 2 5 3 4 DIM A A1 B A C Reduce a Quantity of Parts and Manufacturing Process

Contextual Info: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A 1 6 2 5 3 4 A1 Low Leakage Current C FEATURES : ICEX=-50nA Max. , IBL=-50nA(Max.) D @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity.

DTC144

Abstract: dtC144 transistor marking code A12 SOT723
Contextual Info: DTC144 TM/TE/TUA/TCA/TSA NPN Small Signal Transistor DTS+A1 Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

KTX212E

Contextual Info: SEMICONDUCTOR KTX212E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 6 2 5 3 4 A1 Thin Extreme Super mini type with 6 leads. C Including two devices in TES6.

SFH6326-X007

Abstract: sfh6326-x017 SFH6325-X017 SFH6325-X009T SFH6326-X017T
Contextual Info: SFH6325, SFH6326 www.vishay.com Vishay Semiconductors High Speed Optocoupler, Dual Channel, 1 MBd, Transistor Output FEATURES A1 1 8 C VCC C1 2 7 C1(VO1) C2 3 6 C2(VO2) 4 5 E(GND) A2 i179071-3 • • • • • • • V D E i179026 DESCRIPTION Isolation test voltage, 5300 VRMS

an5296

Abstract: AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 FN532 CA30
Contextual Info: CA3146, CA3146A, CA3183, CA3183A T O DU C T TE PR E O DU C L R O P S E T OB U 3 BSTIT , CData 308Sheet LE SU 86 A POSSIB 3046, CA30 CA May 2001 FN532.6 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a

M63828DP

Abstract: 16PIN M63828WP 16P4X-A IL500
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made

PHB50N03LT

Abstract: PHD50N03LT PHP50N03LT air handling unit
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP50N03LT, PHB50N03LT PHD50N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance

PHB69N03LT

Abstract: PHD69N03LT PHP69N03LT
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP69N03LT, PHB69N03LT PHD69N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible

Contextual Info: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings

switching transistor msd

Abstract: Mil-R-39016/11 tyco mil relay
Contextual Info: MS MSD MSDD MST TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MS MSD MSDD MST SENSITIVE TO-5 HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE

C 828 Transistor

Abstract: C 828 Transistor pins TRANSISTOR C 369 transistor c 828 low level Mil-R-39016 iC 828 Transistor transistor 828 MIL-R-39016/9 828 diode MIL-R-39016-9
Contextual Info: MA MAD MADD MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MA MAD MADD MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE

L9935

Abstract: XX111111
Contextual Info: L9935 TWO-PHASE STEPPER MOTOR DRIVER 2 X 1.1A FULL BRIDGE OUTPUTS INTEGRATED CHOPPING CURRENT REGULATION MINIMIZED POWER DISSIPATION DURING FLYBACK OUTPUT STAGES WITH CONTROLLED OUTPUT VOLTAGE SLOPES TO REDUCE ELECTROMAGNETIC RADIATION SHORT-CIRCUIT PROTECTION OF ALL

phd45n03

Abstract: PHP45N03LT PHD45N03L 74 series PHILIPS PHB45N03LT PHD45N03LT PHP45 php45n03
Contextual Info: PHP45N03LT; PHB45N03LT; PHD45N03LT N-channel TrenchMOS transistor Rev. 06 — 05 October 2000 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: