TRANSISTOR A 950 Search Results

97CC

Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
Contextual Info: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection

K1 transistor

Abstract: pnp vhf transistor
Contextual Info: 25C D • 523SbQS QDQMS3‘i 4 WiSIZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 236 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,

Contextual Info: N AMER PH IL IPS /DISCR ETE b b S a ^ l OOEfi^Ql 2m BLV10 b^E » IAPX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in ciass-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and

d 331 transistor 1080

Abstract: bly87c MSB056
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLY87C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

2SA1646

Contextual Info: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,

2SA1646

Abstract: 2SA1646-Z NEW TRANSISTOR
Contextual Info: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,

TM1102

Abstract: S1U MARKING TF 745-A SOT223 MARKING L5 l5 transistor PNP transistor PNP L5 PZTM1101 PZTM1102 lf marking transistor transistor marking LF
Contextual Info: Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102 FEATURES DESCRIPTION • Low output capacitance Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101. • Fast switching time

BLX92A

Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Contextual Info: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

transistor tt 2222

Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
Contextual Info: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and

tm1101

Abstract: Diode schottky eb PZTM1101 PZTM1102
Contextual Info: Product specification Philips Semiconductors PZTM1101 NPN transistor/Schottky-diode module FEATURES DESCRIPTION • Low output capacitance Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement: PZTM1102.

GRM39

Abstract: GRM708 RD05MMP1 diode GP 829 6030D
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

grm708

Abstract: transistor 5024 GRM39 RD05MMP1 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

st zo 607

Abstract: 2SC5436 2SC5800 30614
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor

TRANSISTOR D 1785

Abstract: diode GP 829 transistor 3669 6030D RD05MMP1 diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

JLN 2003

Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
Contextual Info: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.

transistor ESM 30

Abstract: transistor ESM transistor h21e 752 transistor IC 282 ft950
Contextual Info: ESM 282 NPN SILICON TRANSISTOR, PLANAR TRIPLE DIFFUSED TRANSISTOR NPN S ILIC IU M , PLAN A R TRIPLE DIFFUSE PR ELIM INARY DATA NOTICE P R E LIM IN A IR E The ESM 282 is an high frequency X-55 plastic package transistor, intended for mixer and os­ cillator stage in T V VH F tuners.

10AM11

Abstract: 08.24.35 ic sheet data 9847 9508 ic 4521 90436 130-047
Contextual Info: 10AM11 11 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM11 is a COMMON EMITTER transistor capable of providing 11 Watts of Class A, RF output power to1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

10A060

Abstract: 20989 78561 MAG 1832 55FT
Contextual Info: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

fe 8622

Abstract: 422-371 23A025 521603 18896
Contextual Info: 23A025 2.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A025 is a COMMON EMITTER transistor capable of providing 2.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

23A017

Abstract: 33797 4561 140452
Contextual Info: 23A017 1.7 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

IC 7476

Abstract: IC 7476 datasheet 7476 IC datasheet data sheet IC 7476 data sheet of ic 7476 ic 7476 data sheet ic 7840 7476 data sheet 10A030 58167
Contextual Info: 10A030 3 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A030 is a COMMON EMITTER transistor capable of providing 3 Watts of Class A, RF Output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

DIODE GP 704

Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

Contextual Info: N AUER PHILIPS/DISCRETE bSE 1> • bb53S31 002clbbb 41S HIAPX I BLY87C A _ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and

97942

Abstract: 74929 Transistor 5503 231369 TRansistor A 940 10AM20 273157
Contextual Info: 10AM20 20 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM20 is a COMMON EMITTER transistor capable of providing 20 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes