TRANSISTOR A 1263 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

transistor d 1264 a

Abstract: transistor A 1264 transistor d 1264
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has

0118 transistor

Abstract: 14.5M 1982 P6.064 Package AA2E
Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SOT 0.20 (0.008) M P6.064 C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL INCHES e b SYMBOL L CL CL E E1 α e1 D C CL A A2 A1 SEATING PLANE MIN MILLIMETERS MIN MAX NOTES

EDS-100935

Abstract: SGA-1263
Contextual Info: Preliminary SGA-1263 Product Description Sirenza Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. This RFIC is a 2-stage design that provides high isolation of

SGA-1263

Abstract: Stanford Microdevices 4 ghz
Contextual Info: Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium

marking A12

Contextual Info: Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium

MARKING HBT

Abstract: SGA-1263 SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
Contextual Info: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain

SGA-1263

Abstract: SGA-1263Z BY 356
Contextual Info: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain

trace code marking RFMD

Abstract: SGA-1263 SGA-1263Z
Contextual Info: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain

Contextual Info: POWER RF MOSFET TRANSISTORS POLYFET RF DEVICES 1. Basic Considerations 1.1. Use a Printed Circuit Board - In most cases superior and more repeatable performance can be obtained using a printed circuit board with stripline inductors. It is also easier to maintain a good ground plane around the transistor.

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

equivalent transistor c 5888

Abstract: C - 4834 transistor tms 3615 transistor BF 697 Philips FA 291 LMT 4585 2857 M 730 transistor LMT 393 N 43t SOT323 lmt 393
Contextual Info: IH bb53T31 DQ2531& 350 ^ l A P X Philips Sem iconductors • Product s p e c ific a tio n N AHER PHILIPS/DISCRETE b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION PIN • Low noise figure DESCRIPTION Code: N2

equivalent transistor c 5888

Contextual Info: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency

Contextual Info: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied

SOT173

Abstract: BFR520 transistor BFG520 BFP520 BFR520 X3A-BFR520
Contextual Info: bbSBTBl 0G3221b ÔE3 W A P X Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal X3A-BFR520 N AMER PHILIP S/D ISCRETE DESCRIPTION b'IE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied

BFG520

Abstract: X3A-BFR520 SOT173 BFP520 BFR520 SOT-173
Contextual Info: P h ilip s S em icon du ctors Produ ct specification •T'3 1-9-0 NPN 9 GHz wideband transistor crystal X3A-BFR520 StE » PHILIPS INTERNATIONAL DESCRIPTION 711DfiEb DDMblOb 2b5 M E C H A N IC A L DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied

Contextual Info: BUK7Y18-55B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

Contextual Info: BUK7Y18-55B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

MAX1658

Abstract: MAX1658ESA MAX1659 MAX1659ESA
Contextual Info: 19-1263; Rev 0; 7/97 350mA, 16.5V Input, Low-Dropout Linear Regulators The MAX1658/MAX1659 feature a 1µA shutdown mode, reverse battery protection, short-circuit protection, and thermal shutdown. They are available in a special highpower 1.2W , 8-pin SO package designed specifically

MAX1658

Abstract: MAX1658ESA MAX1659 MAX1659ESA
Contextual Info: 19-1263; Rev 0; 7/97 350mA, 16.5V Input, Low-Dropout Linear Regulators The MAX1658/MAX1659 feature a 1µA shutdown mode, reverse battery protection, short-circuit protection, and thermal shutdown. They are available in a special highpower 1.2W , 8-pin SO package designed specifically

Contextual Info: >kl>JX I>kl 19-1263; Rev 0: 7/97 350mA, 16,5V Input, Low-Dropout Linear Regulators Genera/ Description The MAXI 658/MAX1659 feature a 1|JA shutdown mode, reverse battery protection, short-circuit protection, and thermal shutdown. They are available in a special highpower 1.2W , 8-pin SO package designed specifically

max1658esa

Abstract: 9-350MA
Contextual Info: 19-1263; Rev 0; 7/97 350mA, 16.5V Input, Low-Dropout Linear Regulators The MAX1658/MAX1659 feature a 1µA shutdown mode, reverse battery protection, short-circuit protection, and thermal shutdown. They are available in a special highpower 1.2W , 8-pin SO package designed specifically