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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor T1J Datasheets Context Search

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2002 - transistor T1J

Abstract: T1J marking
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES · The device is an ideal choice for medium output power, high-gain amplification and low distortion , capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB T1J , T1J 4 1 2.0 ± 0.1 2 0.65 0.59 ± 0.05 PIN CONNECTIONS 1. 2. 3. 4. Base Emitter


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PDF NESG2101M05 NESG2101M05 transistor T1J T1J marking
2002 - transistor T1J

Abstract: NESG2101M05-T1 NESG2101M05
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES · The device is an ideal choice for medium output power, high-gain amplification and low distortion, low , when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking T1J hFE , T1J 0.65 0.65 1.30 0.59±0.05 2.0±0.1 3 1.25±0.1 PIN CONNECTIONS 1. 2. 3. 4


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PDF NESG2101M05 PU10190EJ02V0DS transistor T1J NESG2101M05-T1 NESG2101M05
IC802

Abstract: RTL 602 W transistor T1J K40 fet IC-221 transistor k79 VC175 CN602 DFJP050ZA002 transistor k38 w7
Text: %61#+%!)*%!"#.-!V5U7 ED8 5*%+$!&,?):#(%!&%).-/7 X%61#+%!)*%!B6%#$%(&7 EDP Z,%&!,6%(#).,-!(%)'(-!), -,( T#1J EDE X , ,-!(%)'(-!), 9O -,( T#1J >D8 5*%+$!+,-?./'(#).,-7 D H"#IJKL3-D$M#$.-2/34.4 /). 8 4FEB?)E ^%W!),6 , )%3J ID8 X%61#+%!)*%!$%W0,#(37 T#1J @AB 9O @AB 9O @AB 9O @AB 9O @AB , DIODE DIODE DIODE TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR 2 5 1 1 4 1 2 5 6 5 4 2 17-3 Q213 247 LD1 IC222 IC221 IC9 IC203 IC206 IC28


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PDF I/08/4! 65134B 086C3 9E73B 518D9' I5134! M0934N 58D2BD IC802 RTL 602 W transistor T1J K40 fet IC-221 transistor k79 VC175 CN602 DFJP050ZA002 transistor k38 w7
2008 - ADM1032

Abstract: transistor T1J 2N3904 2N3906
Text: the absolute value of the transistor 's base emitter voltage so that no calibration is required. The , temperature sensor. Figure 13 shows the external sensor as a substrate transistor , provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor . If a discrete transistor is used, the collector is not grounded and should be linked to the base. To prevent ground noise , transistor , operated at constant current. Unfortunately, this technique requires calibration to null out the


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PDF ADM1032 ADM10321 ADM1032 transistor T1J 2N3904 2N3906
2005 - ADM1032ARMZ-1

Abstract: ADM1032ARMZ T1J transistor T1J ADM1032ARMZ-REEL7 2N3904 MS-012-AA MO-187-AA ADM1032 2N3906 ADM1032ARMZ-2REEL
Text: ), accurate to 1°C. A novel measurement technique cancels out the absolute value of the transistor 's base , sensor as a substrate transistor , provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor . If a discrete transistor is used, the collector is not , the base-emitter voltage of a transistor , operated at constant current. Unfortunately, this , sensor is performed in a similar manner. VDD N×I IBIAS D+ REMOTE SENSING TRANSISTOR VOUT


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PDF ADM1032 ADM1032 C01906-0-11/05 ADM1032ARMZ-1 ADM1032ARMZ T1J transistor T1J ADM1032ARMZ-REEL7 2N3904 MS-012-AA MO-187-AA 2N3906 ADM1032ARMZ-2REEL
2002 - transistor T1J

Abstract: NESG2101M05-T1 MICROWAVE TRANSISTOR NEC NESG2101M05 NESG2101M05 T1J marking
Text: . DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM , when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking T1J hFE , T1J 0.65 0.65 1.30 0.59±0.05 2.0±0.1 3 1.25±0.1 PIN CONNECTIONS 1. 2. 3. 4


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PDF PU10190EJ02V0DS NESG2101M05 transistor T1J NESG2101M05-T1 MICROWAVE TRANSISTOR NEC NESG2101M05 NESG2101M05 T1J marking
IH33

Abstract: 1AP 164 gsm 900 amplifier d 317 transistor
Text: fechnoiogies Infineon CGY 98 GSM/PCN Dual Band Power Amplifier 1 1.1 Schematic of the CGY 98 PA Application Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1 .2. Each one uses a BFP 420 SIEGET® transistor for first-stage amplification, and the CGY 98 GaAs MMIC for the final two stages. The amplifier chains can be , ' Delta 1[ T1J RefLvI -43.51 dB 36.8 dBm 1.74299198 GHz 40 36.8 cBOffset 30 ri RßW 1 0 MH2 RFAtl 10 dB


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PDF
2012 - Not Available

Abstract: No abstract text available
Text: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES · The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise , hFE CLASSIFICATION Rank Marking hFE Value FB/YFB T1J 130 to 260 R09DS0036EJ0300 Rev. 3.00 Jun , ) 2.05±0.1 1.25±0.1 (1.05) 3 2 (Bottom View) (0.65) T1J 4 1 2.0±0.1 0.65 0.30+0.1 ­0.05


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PDF NESG2101M05 R09DS0036EJ0300
2012 - Not Available

Abstract: No abstract text available
Text: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low , T1J 130 to 260 R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 2 of 13 NESG2101M05 TYPICAL , 2 1 4 0.30+0.1 –0.05 T1J (0.65) 0.65 1.30 3 (1.05) 2.0±0.1 0.11+0.1


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PDF NESG2101M05 R09DS0036EJ0300
2003 - transistor T1J

Abstract: NEC 9319 bjt npn
Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · · · · · HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M05 , LEAD 4-PIN THIN TYPE SUPER MINIMOLD 2.05±0.1 1.25±0.1 3 2 T1J 4 1 0.65 1.30 2.0 ±0.1


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PDF NESG2101M05 OT-343 transistor T1J NEC 9319 bjt npn
transistor gl 1117

Abstract: NEC NESG2101M05 IC 7408 1GP20 NESG2101M05 NESG2101M05-T1 S21E re 10019
Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) · HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz · LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz · HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz · LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better , ) PACKAGE OUTLINE M05 FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD 2.05±0.1 1.25±0.1 2 T1J 3 2.0


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PDF NESG2101M05 OT-343 NESG2101M05 461e-12 9e-15 transistor gl 1117 NEC NESG2101M05 IC 7408 1GP20 NESG2101M05-T1 S21E re 10019
2012 - 1032ar

Abstract: T1J marking diode SOT-23 marking t1c ADM1032-2 1032ar01 1023A ADM1032
Text: absolute value of the transistor 's base emitter voltage so that no calibration is required. The ADM1032 , transistor , provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor . If a discrete transistor is used, the collector is not grounded and should be linked , negative temperature coefficient of a diode, or the base-emitter voltage of a transistor , operated at , SENSING TRANSISTOR C1* D- BIAS DIODE VOUT+ To ADC VOUT- LOW-PASS FILTER fC = 65 kHz * CAPACITOR C1


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PDF ADM1032 ADM1032 2N3904/06) ADM1032/D 1032ar T1J marking diode SOT-23 marking t1c ADM1032-2 1032ar01 1023A
2009 - 1032AR

Abstract: 0250C SOT23 NPN marking 4d T1C MSOP-8 ADM1032
Text: absolute value of the transistor 's base emitter voltage so that no calibration is required. The ADM1032 , base-emitter voltage of a transistor , operated at constant current. Unfortunately, this technique requires , the external sensor as a substrate transistor , provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor . If a discrete transistor is used, the , + REMOTE SENSING TRANSISTOR C1 D­ BIAS DIODE LOW-PASS FILTER fC = 65kHz VOUT+ TO ADC VOUT­ CAPACITOR


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PDF ADM1032 ADM1032 2N3904/06) ADM1032/D 1032AR 0250C SOT23 NPN marking 4d T1C MSOP-8
2003 - BF 3027

Abstract: transistor T1J NESG2101M05-T1-A 13444 1GP20 mje 2055 14851 GA1060 nec 2562 S21E
Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) · HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz · LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz · HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz · LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better , MINIMOLD 2.05±0.1 1.25±0.1 3 T1J 2 2.0 ±0.1 4 0.65 1.30 0.65 1 +0.1


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PDF NESG2101M05 OT-343 NESG2101M05 BF 3027 transistor T1J NESG2101M05-T1-A 13444 1GP20 mje 2055 14851 GA1060 nec 2562 S21E
2013 - ADM1032 D

Abstract: ADM1032
Text: absolute value of the transistor 's base emitter voltage so that no calibration is required. The ADM1032 , sensor. Figure 12 shows the external sensor as a substrate transistor , provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor . If a discrete transistor is used, the collector is not grounded and should be linked to the base. To prevent ground noise , the base-emitter voltage of a transistor , operated at constant current. Unfortunately, this technique


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PDF ADM1032 ADM1032 2N3904/06) ADM1032/D ADM1032 D
2009 - 1032AR

Abstract: SOT-23 marking t1c ADM1032ARZ ADM1032 transistor T1J 2N3906 1032AR01 marking code 8 lead soic-n package analog devices
Text: the absolute value of the transistor 's base emitter voltage so that no calibration is required. The , transistor , provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor . If a discrete transistor is used, the collector is not grounded and should be linked , voltage of a transistor , operated at constant current. Unfortunately, this technique requires calibration , currents. VDD I N× I IBIAS D+ REMOTE SENSING TRANSISTOR VOUT+ TO ADC C1 D­ BIAS


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PDF ADM1032 ADM1032 2N3904/06) ADM1032/D 1032AR SOT-23 marking t1c ADM1032ARZ transistor T1J 2N3906 1032AR01 marking code 8 lead soic-n package analog devices
1993 - transistor marking T79 ghz

Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA transistor 2SA data book pc3215 2SC5432EB
Text: discrete microwave transistor series can be broadly divided into single type and twin type. The former , made up of transistor arrays and prescalers, amplifiers, mixers, modulators/demodulators, and PLL , FB T1J F4TSMM NESG2101M05 2 20 2 18 2 5 2 0.9 1.1 FB zD , available. Absolute Maximum Ratings Part Transistor (TA = +25°C) Internal Number Electrical


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PDF PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA transistor 2SA data book pc3215 2SC5432EB
ADM1032

Abstract: No abstract text available
Text: temperature sensor. Figure 12 shows the external sensor as a substrate transistor , provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor . If a discrete transistor is used, the collector is not grounded and should be linked to the base. To prevent ground noise , negative temperature coefficient of a diode, or the base-emitter voltage of a transistor , operated at , IBIAS VOUT+ D+ REMOTE SENSING TRANSISTOR To ADC C1* D− BIAS DIODE VOUTâ


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PDF ADM1032 ADM1032 2N3904/06) ADM1032/D
MAB8048HP

Abstract: 16x8 dual ram intel 8048h PC SOT-145 MAB8035HL MAB8048H P20-P23 sp 1982 transistor sot145
Text: relatively low impedance transistor (« Si kii) is switched on momentarily for 1/5 of a machine cycle whenever a '1' is written to the line. When a '0' is written, a low impedance (= 300 O) transistor overcomes the light pull-up and provides TTL current sinking capability. Since the pull-down transistor is , Quasi-bidirectional port structure. Test (TO, T1j and INT inputs Three piins serve as inputs and are testable with


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PDF MAB8048H MAB8048H MAB8035HL MAB8048M 40-LEAD OT-88B) MAB8048HP 16x8 dual ram intel 8048h PC SOT-145 P20-P23 sp 1982 transistor sot145
AD5820

Abstract: TDA7256 15 pin
Text: transistor , Q1, and capacitor, Cd, to be used. Base-emitter damping is important to reduce the possibility , current paths are via the 5 0 m fi sense resistor, the series switching transistor , output inductor L1 , transistor . Using an FMMT718 which drops only 200mV @ 1.5A the converter operates at an efficiency of over 90% at minimum input voltage and an Iout of 1.5A. The transistor 's high gain allows base drive


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PDF OPA655xP OPA655P 12-Bit, 10-Bit, BY328 PCF8583T P87C528EBPN NE5200D NE568AM TDA1560Q AD5820 TDA7256 15 pin
SMD Codes

Abstract: TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a a4s smd transistor transistor SMD P2F Transistor SMD a7s MMBD2101
Text: example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , dual gate digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small , effect transistor maximum available gain maximum min mmic modamp mosfet n-ch npn o/p p-ch pin pkg pnp , - an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor


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PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a a4s smd transistor transistor SMD P2F Transistor SMD a7s MMBD2101
MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: transistor with a Vc e (max) of 20V, maximum collector current of 100mA and a maximum total power dissipation , BC547C 1Gs 1GR 1GT 1G 1G p1G t1G t1G 1GM 1Hp 1Ht 1Ht 1H1H 1H t1H 1HT 1J 1Js 1Js 1J 1J 1Js 1Jp p1J t1J t1J 1JA 1JR 1JZ 1K 1Kp 1Ks 1Ks 1K p1K t1K t1K 1K 1Ks 1Kp 1KR 1KM 1KZ 1L 1Lp 1Ls 1Ls 1L 1L 1L 1Lp p1L


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PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F NDS358N BAT15-115S
Text: example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small signal , transistor maximum available gain maximum minimum microwave minature integrated circuit modular amplifier - an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor


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PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F NDS358N BAT15-115S
1999 - TV horizontal Deflection Systems

Abstract: TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet horizontal section in crt television CRT TV electron gun TV flyback transformer
Text: of the paper is an introduction to the operation of the deflection transistor . The switching times , transistor technologies. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: (i) edge termination, (ii) the emitter layout and , are mentioned in brief. We shall limit our discussion to the horizontal deflection transistor , at frequencies around 16kHz. The current requirements of the transistor switch varied between 2A


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PDF 16kHz 32kHz, 64kHz, 100kHz. TV horizontal Deflection Systems TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet horizontal section in crt television CRT TV electron gun TV flyback transformer
1999 - ADM6315-31D4ARTZR7

Abstract: ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
Text: STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown , -40°C to +125°C -40°C to +125°C Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 ADM6315 D00081-0-12/11 ADM6315-31D4ARTZR7 ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
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