TRANSISTOR 955 E Search Results

Contextual Info: TOSHIBA 2SA1955 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 955 GENERAL PURPOSE AM PLIFIER APPLICATIONS Unit in mm SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage : VCE (sat) d ) = - 15mV (TyP-) @ Iq = —10mA / Iß = -0.5m A

TRANSISTOR 955 E

Abstract: VPS05163 50/TRANSISTOR 955 E
Contextual Info: BDP 951 . BDP 955 NPN Silicon AF Power Transistor
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration VPS05163

TRANSISTOR 955 E

Abstract: VPS05163
Contextual Info: BDP 951 . BDP 955 NPN Silicon AF Power Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration

2SA1955

Contextual Info: 2SA1955 T O S H IB A 2 S A 1 955 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm GENERAL PURPOSE AM PLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION Low Saturation Voltage Large Collector Current VCE (sat) (D = - 15mV (TyP-)

2SA1955

Contextual Info: 2SA1955 TO SH IBA 2 S A 1 955 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION 1.6 ± 0.2 ,0.8 ± 0 .1, r— : —1 • Low Saturation Voltage : VCE (sat) (1) = - l5mV (TyP-)

50/TRANSISTOR 955 E

Abstract: TCA955 TRANSISTOR 955 E
Contextual Info: 47E » • ñE35bOS DÜ3S2bl ô « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF Speed Controller TCA 955 Bipolar 1C Features • • High control accuracy Large supply voltage range Typical Applications Speed control in • • • • • Tape recorders Cassette recorders

DCA50

Abstract: DCA50e germanium transistors NPN 6F22 MN1604 SK17 the transistor equivalent TRANSISTOR 955 E
Contextual Info: DCA50e component analyser enhanced user guide introduction - automatically. As identification, the measures transistor gain The DCA50e Component Analyser is a highly advanced instrument that provides a wealth of functionality and features in one extremely easy

micrologic

Abstract: gating a signal using NAND gates fairchild micrologic IC953 slave and master inverter circuit diagrams Inverter Gates CA2TC CTVL952 pin configuration of logic gates logic gates circuit diagram
Contextual Info: • M ARCH 1965 CT mL952 THROUGH CTgL957 9 TRANSISTOR COMPLEMENTARY TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS MICROLOGIC® G E N E R A L D E S C R IP T IO N - The Fairchild CT/aL Fam ily was designed for very high-speed, low -cost com m ercial system s applications.

DCA50e

Abstract: DCA50 germanium transistors NPN 6F22 MN1604 SK17 germanium transistoren
Contextual Info: DCA50e Komponenten-Analysator erweitert Hergestellt in Großbritannien. Peak Electronic Design Ltd. Atlas House, Kiln Lane, Harpur Ind. Est, Buxton, SK17 9JL, U.K. Einleitung Der DCA50e KomponentenAnalysator ist ein zukunftsweisendes Instrument, das eine Vielzahl von

lc 945 transistor

Abstract: transistor LC 945 TRANSISTOR 955 E 965 transistor 35 W 960 MHz RF POWER TRANSISTOR NPN
Contextual Info: ERICSSON $ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP

TRANSISTOR 955 E

Abstract: PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor
Contextual Info: e PTB 20148 60 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP

transistor 9527

Abstract: T 9527 st 9535 9542 mitsubishi data sheet transistor 9527
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the

mosfet st 9544

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the

transistor 131-6

Abstract: 4139 temperature TRANSISTOR K 314 p945
Contextual Info: /'2#5HJXODWRUV#ZLWK#D#:DWFKGRJ 7LPHU 584359#6 5,(6 $33/,&$7,21#0$18$/ NO. EA-072-0006 LDO Regulators with a Watchdog Timer 584359#6(5,(6 OUTLINE ,# ,&V# ZLWK# KLJK# DFFXUDF\# RXWSXW#YROWDJH

cgs resistor

Abstract: microstrip OZ 960 G200 20222
Contextual Info: PTF 102027 40 Watts, 925–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures

OZ 960 S

Abstract: G200 resistor 220 ohm 20222
Contextual Info: PTF 102027 GOLDMOS Field Effect Transistor 40 Watts, 925–960 MHz Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures

BDP955

Abstract: BDP951 BDP952 BDP953 BDP956 VPS05163
Contextual Info: BDP951 . BDP955 NPN Silicon AF Power Transistor
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP952 . BDP956 PNP 2 1 Type Marking Pin Configuration

transistor 4120

Abstract: AZ100LVEL58 AZ100LVEL58D AZ100LVEL58DR1 AZ100LVEL58DR2 AZ100LVEL58T AZ100LVEL58TR1 AZ100LVEL58TR2 AZTLV58 MC100LVEL58
Contextual Info: ARIZONA MICROTEK, INC. AZ100LVEL58 ECL/PECL 2:1 Multiplexer FEATURES • • • • • • PACKAGE AVAILABILITY 440ps Propagation Delay Operating Range of 3.0V to 5.5V Internal Input Pulldown Resistors Q Output will Default LOW with Inputs Open or at VEE

RF MOSFET MODULE

Abstract: MOSFET Amplifier Module H46S
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the

transistor 4120

Abstract: AZ100LVEL58T LV58 MC100LVEL58 AZ100LVEL58D AZ100LVEL58
Contextual Info: ARIZONA MICROTEK, INC. AZ100LVEL58 ECL/PECL 2:1 Multiplexer PACKAGE AVAILABILITY FEATURES • • • • • • • Green / RoHS Compliant / Lead Pb Free Packages Available 440ps Propagation Delay Operating Range of 3.0V to 5.5V Internal Input Pulldown Resistors

BTP955L3

Contextual Info: Spec. No. : C606L3 Issued Date : 2005.02.04 Revised Date : 2005.03.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955L3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage

500 watts amplifier schematic diagram pcb layout

Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
Contextual Info: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a

microtek

Abstract: AZ100LVEL58 AZ100LVEL58D AZ100LVEL58T LV58 MC100LVEL58 LVEL58 362-0 transistor
Contextual Info: ARIZONA MICROTEK, INC. AZ100LVEL58 ECL/PECL 2:1 Multiplexer PACKAGE AVAILABILITY FEATURES • • • • • • • Green / RoHS Compliant / Lead Pb Free Packages Available 440ps Propagation Delay Operating Range of 3.0V to 5.5V Internal Input Pulldown Resistors

BDP ST

Abstract: BDP951 BDP952 BDP953 BDP955 BDP956 VPS05163
Contextual Info: BDP951 . BDP955 NPN Silicon AF Power Transistor
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP952 . BDP956 PNP 2 1 Type Marking Pin Configuration