TRANSISTOR 91 330 Search Results

transistor buz 350

Abstract: BUZ 330 C67078-S1342-A3 buz 91 f
Contextual Info: Not for new designs BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 91 A 600 V 8A 0.9 Ω TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol

ldr 10k

Abstract: LDR 07 equivalent Antenna Coil 330uh NIPPON CAPACITORS LDR 20K SM8142AD 3 pins LDR Datasheet transistor 91 330 LDR Datasheet ldr resistor
Contextual Info: SM8142 NIPPON PRECISION CIRCUITS INC. Application Note EL Sheet Driver IC OVERVIEW SM8142A SM8142B The SM8142A has independent coil drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a

transistor 91 330

Abstract: toko 10k coil ldr 10k NIPPON CAPACITORS 1SS370 SM8143 SM8143A
Contextual Info: SM8143 NIPPON PRECISION CIRCUITS INC. Application Note EL Sheet Driver IC OVERVIEW The SM8143 has independent coil drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.

transistor 91 330

Abstract: Circuit diagram of LDR ldr 10k SM8143 NIPPON CAPACITORS ldr resistor small ldr 2 pins datasheet 1SS370 SM8143A vsop 16
Contextual Info: SM8143 Application Note EL Driver IC OVERVIEW The SM8143 has independent inductor drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.

str 6307

Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
Contextual Info: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering

LDR 5K

Abstract: LDR 3PIN transistor current booster circuit ldr 10k of LDR 5K NIPPON CAPACITORS SM8142BD Circuit diagram of LDR ldr resistor 1SS370
Contextual Info: SM8142 Application Note EL Driver IC OVERVIEW SM8142A SM8142B The SM8142A has independent coil drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a

K2400F1

Abstract: metal halide ignitor circuit IGNITOR Z 400 M IGNITOR Z 400 M k k2401 KZ20D hid lamp ignitor application notes HQI-T250W OSRAM ignitor ignitor circuit 400
Contextual Info: SIDAC 95 - 330 Volts Genera! Description The Sidac is a silicon bilateral voltage triggered sw itch with greater pow er-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac sw itches on through a negative resistance region

K24008

Contextual Info: Do not use m ounting tab or center lead, electrica lly connected SIDAC 95 - 330 Volts General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage

AM417

Abstract: Wheatstone Bridge amplifier Wheatstone Bridge operational amplifier wheatstone bridge interface WITH ADC Instrumentation Amplifier IC SOP08 5V11mA "Instrumentation Amplifier" AM467 BC557C
Contextual Info: AM417 – Ratiometric instrumentation amplifier with adjustable output stage PRINCIPLE FUNCTION Integrated instrumentation amplifier with an output stage for the amplification of differential signals and with an internal current source for the supply of external signal sources. The

B81121 X2 mkt

Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
Contextual Info: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r

xenon ignitor

Abstract: xenon hid ballast K2000G SIDAC K2200G Electronic ignitors for HID lamp circuits sidac trigger circuit xenon lamp igniter TIP 110 transistor V-I characteristics of SIDAC Transistor Bo 47
Contextual Info: DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 Do not use mounting tab or center lead, electrically connected TO-92 Type 70 SIDAC 95 - 330 Volts 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon

HXTR-2001

Abstract: S21E 210SC
Contextual Info: COMPONENTS GENERAL PURPOSE TRANSISTOR CHIP Features HXTR-2001 CIRCUITS H E W L E T T ^ PACKARD 330 0.013 TYP. - HIGH OUTPUT POWER 20.0 dBm PidB Typical at 2 GHz LOW NOISE FIGURE 3.8 dB Typical at 4 GHz ' 90 (0.0035) 330 (0.013) FOR HYBRID . 1 . . WIDE DYNAMIC RANGE

do15x

Abstract: xenon hid ballast xenon ignitor SIDAC K2200G sidac IGNITOR Z 400 M xenon ballast K1200S SIDAC 450V ignitors for xenon HID lamp application note
Contextual Info: DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 Do not use mounting tab or center lead, electrically connected TO-92 Type 70 SIDAC 95 - 330 Volts 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon

Contextual Info: www.fairchildsemi.com ILC6390/91 SOT-89 Step-Up PFM Switcher with Auto-Load Sense Features Description • • • • • 50 mA boost converter using Pulse Frequency Modulation, or PFM, technique, in 5-lead SOT-89 or a 5-lead SOT-23 package. Only 3 external components are needed to complete

transistor 91 330

Abstract: 388-XX-102-11-740800
Contextual Info: MISCELLANEOUS SOCKETS Transistor & Microphone Sockets 0,38 0,64 0,25 0,46 2,18 2,79 3,68 0,51 4,19 3,18 ● Series 917 TO package sockets are available in 3,4,8 and 10 pins. ● Two 8 pin versions feature pin centers on 5,08 or 5,84 circle. ● Uses Mill-Max # 1705 pin, see

VIBRATION LIMIT SWITCH

Abstract: LVL-Z64 LIMIT SWITCH namur application 1.4571 resistant pg11 cable gland AC 128 pnp transistor "din 7603" DIN 7603 BSP 1 thread 14571
Contextual Info: Vibration limit switch Dimensions ~120 A ø40 A PG11 cable gland IP65/67) B) Test magnet C) G1A (cylindrical), 1 NPT (conical), R 1 (conical), made of corrosion resistant steel D) Vibration fork made of heavy duty corrosion resistant steel E) Green light-emitting diode "ready to operate"

ETC4390C-33U

Abstract: ETC4390C-50U MA735 634 transistor
Contextual Info: ETC4390, ETC4391 PFM Controlled, Step-Up DC/DC Converters Variable Duty Ratio Pin Configurations Description The ETC4390/91 series is a group of PFM controlled step-up DC/DC converters. Unlike conventional PFMs, the ETC4390/91 automatically switches duty ratio

MAR 618 transistor

Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

IC 30427

Abstract: IC 30427 M RD06HHF1 transistor d 1557 1518 B FET TRANSISTOR 30427 25.ID5 mosfet HF amplifier Pch MOS FET mosfet vgs 5v
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.

AN1590

Abstract: HC05MC4 HP4504 IGBT motor DRIVER SCHEMATIC hcpl OPTO HP4504 SCHEMATIC POWER SUPPLY WITH IGBTS single phase IGBT based PWM inverters microcontroller based PWM inverters opto isolation application note visinka
Contextual Info: MOTOROLA Order this document as AN1590/D SEMICONDUCTOR APPLICATION NOTE AN1590 HV Power Board for Three Phase Motor by Ivan Skalka, Leos Chalupa, Radim Visinka Roznov Industrial System Application Lab 1 Introduction This application note discusses one member of the Motor Control Kit, developed by Motorola. Motorola offers a wide variety

transistor d 1557

Abstract: RD06HHF1 transistor 45 f 123 mosfet HF amplifier MITSUBISHI RF POWER MOS FET RF POWER TRANSISTOR 30MHz RD06HHF hf power transistor mosfet j4 92
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.

LM567 application note

Abstract: IC LM567 LM567 application lm567
Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents LM567, LM567C SNOSBQ4E – MAY 1999 – REVISED DECEMBER 2014 LM567x Tone Decoder 1 Features 3 Description • The LM567 and LM567C are general purpose tone decoders designed to provide a saturated transistor

transistor 91 330

Abstract: tlp 122 TRANSISTOR TLP635F 388 transistor R358 395 transistor transistor f 421 IC 4N25 triac 40 RIA 120
Contextual Info: 3. Alphanumeric Index Type 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 4N35 4N36 4N37 4N38 4N38À 6N135 6N136 6N137 6N138 6N139 CNY17-L CNY17-M CNY17-N H 11AA1 H 11AA2 H11AAS H11AA4 HI 1L1 H11L3 TLP112 TLP112A TLP113 TLP115 TLP115A TLP120

Contextual Info: AMIS-30543 Micro-Stepping Motor Driver Introduction The AMIS−30543 is a micro−stepping stepper motor driver for bipolar stepper motors. The chip is connected through I/O pins and an SPI interface with an external microcontroller. It has an on−chip voltage regulator, reset−output and watchdog reset, able to supply