TRANSISTOR 9050 Search Results

2SB775

Abstract: 2SB77 2SD895 1116MW
Contextual Info: Ordering number:ENN679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Package Dimensions unit:mm 2022A [2SB775/2SD895] 15.6 14.0 3.2 3.5 4.8 2.0 1.3

2SC4615

Abstract: 2044B 2SA1772
Contextual Info: Ordering number:ENN3398A 2SA1772 : PNP Epitaxial Planar Silicon Transistor 2SC4615 : NPN Triple Diffused Planar Silicon Transistor 2SA1772/2SC4615 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=1A . · High breakdown votlage (VCEO≥400V).

Contextual Info: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors

TRANSISTOR zo 109 ma

Abstract: transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856
Contextual Info: Linear Accelerator Pulsed Power Transistor PH2856-22 22 Watts, 2.856 GHz, 12 jlis Pulse, 10% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry

transistor c 3206

Abstract: transistor j7
Contextual Info: Afa R adar Pulsed Power Transistor PH0404-7EL 7 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Emitter Configuration • Broadband Class C Operation • Reliable Fishbone Geometry

T4 0450

Abstract: transistor j8
Contextual Info: Radar Pulsed Power Transistor A ß PH0404-30EL 30 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry

MAPRST2729-170M

Abstract: 15 w RF POWER TRANSISTOR NPN VCC36
Contextual Info: MAPRST2729-170M RADAR PULSED POWER TRANSISTOR 170 Wpk, 2700 - 2900 MHz, 100 s Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 03/30/2005 OUTLINE DRAWING FEATURES • Designed for ATC Radar Applications • NPN Silicon Microwave Power Transistor

transistor yb

Abstract: M220S transistor t 04 27
Contextual Info: Afa Radar Pulsed Power Transistor PH0404-1OOEL 100 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry

omni spectra sma

Abstract: transistor n03 PH2856
Contextual Info: Linear Accelerator Pulsed Power Transistor PH2856-3 3 Watts, 2.856 GHz, 12 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry

VCC36

Contextual Info: Afa Avionics Pulsed Power Transistor PH0912-40 40 Watts, 960-1215 MHz, 7 Features Preliminary Pulse, 50% Duty Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

2SD896

Abstract: 2SB776
Contextual Info: Ordering number:ENN678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7A, AF 40W Output Applications Features Package Dimensions • Capable of being mounted easily because of onepoint fixing type plastic molded package

transistor 355

Abstract: SHM-2E CC 1215
Contextual Info: Afa Avionics Pulsed Power Transistor PH0912-2.5 Preliminary 2.5 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

Contextual Info: Ma Avionics Pulsed Power Transistor PH0912-20 Preliminary 20 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

F300

Contextual Info: CW Power Transistor A fa PH0303-8 8.0 Watts, 300-325 MHz Features • • • • • • • Outline Drawing NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation Diffused Emitter Ballasting Resistors Gold Metallization System

VCO 1.4 GHz

Contextual Info: PH3135-80M Radar Pulsed Power Transistor Preliminary 80 Watts, 3.10-3.50 GHz, 100 us Pulse, 10% Duty Features • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry

MAPHST0034

Abstract: MAPHST MAPHS VCC36 9-GHz c 129 transistor
Contextual Info: MAPHST0034 RADAR PULSED POWER TRANSISTOR 129 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY Datasheet 032803 ECRIEE OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry

a 103 m Transistor

Abstract: A 103 TRANSISTOR transistor PD j6 1030 mhz transistor j6 PH1090-75L f103 TRANSISTOR 75
Contextual Info: PH1090-75L AVIONICS PULSED POWER TRANSISTOR 75 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration

1030-1

Abstract: PH1090-15L
Contextual Info: PH1090-15L AVIONICS PULSED POWER TRANSISTOR 15 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration

VCC36

Contextual Info: Ajfa Radar Pulsed Power Transistor PH2729-120M Preliminary 120 Watts, 2.70-2.90 GHz, 100 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

100 N 37

Contextual Info: CW Power Transistor PH0303-37 37 Watts, 300-325 MHz Features Outline Drawing • NPN Silicon Power Transistor • Common Emitter Configuration • Class AB Linear Operation • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input Impedance Matching

Contextual Info: A ßi Avionics Pulsed Power Transistor PH0912-150 Preliminary 150 Watts, 960-1215 MHz, 7 ys Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration

transistor f20

Contextual Info: Aß Oscillator Power Transistor PH2022-1OSC 1 Watt, 2.00-2.20 GHz Outline Drawing Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Emitter Configuration Designed for S-Band Applications Interdigitated Geometry Diffused Emitter Ballasting Resistors

Contextual Info: Afa Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

PH1417-200S

Abstract: F 140 F140 C5 155 10 PH1417
Contextual Info: A/jtA PH1417-200S Avionics Pulsed Power Transistor Preliminary 200 Watts, 1.40-1.70 GHz, 10 jlis Pulse, 10% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse Avionics Applications NPN Silicon Microwave Power Transistor