TRANSISTOR 8D Search Results

33 GP

Abstract: BLF2045 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2045 UHF power LDMOS transistor Preliminary specification 1999 Jul 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2045 PINNING - SOT467A FEATURES • High power gain PIN DESCRIPTION

BLF2022-70

Abstract: BLF2047 ACPR10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Preliminary specification 2000 Sep 21 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-70 PINNING FEATURES • High power gain

BLF2022-90

Abstract: BLF2022S-90 MBL105
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF2022-90; BLF2022S-90 UHF power LDMOS transistor Product specification Supersedes data of 2003 Feb 24 2003 Jun 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90; BLF2022S-90

DTC114TET1

Abstract: DTC114YET1 DTC123EET1 DTC124EET1 DTC143EET1 DTC114EET1 DTC143TET1 DTC144EET1
Contextual Info: DTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

DTC144EET1G

Abstract: DTC114EET1 DTC114EET1G DTC114YET1 DTC114YET1G DTC124EET1 DTC124EET1G DTC144EET1 DTC123JET1G SOT-416
Contextual Info: DTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

DTC114TET1

Contextual Info: DTC114EET1 SERIES Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

marking code onsemi

Abstract: DTC114EET1 DTC114TET1 DTC114YET1 DTC123EET1 DTC124EET1 DTC143EET1 DTC143TET1 DTC143ZET1 DTC144EET1
Contextual Info: DTC114EET1 SERIES Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

transistor sc 308

Abstract: MUN5214T1 MUN5211T1 MUN5212T1 MUN5213T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1
Contextual Info: MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

2SC1969

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions i'

MUN5214T1

Abstract: MUN5211T1 MUN5212T1 MUN5213T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 TL833
Contextual Info: MOTOROLA Order this document by MUN5211T1/D SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device

dtc143

Abstract: DTC124 DTC123 228A10 DTC114TET1
Contextual Info: DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

MUN5211T1G

Abstract: SMUN5212T1G
Contextual Info: MUN5211T1G Series, SMUN5211T1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network http://onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

160711

Abstract: 59018 transistor 5-1147 transistor 59018 123078 154543 39058 TARF1509U 59818 68207
Contextual Info: Preliminary TARF1509U NPN Planer RF TRANSISTOR SOT-323 □ DESCRIPTION unit : mm The TARF1509U is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT323 package

KST5088

Abstract: KST5089 MARK 5D SOT
Contextual Info: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088

2SC1945

Abstract: 2SC1945 Transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES « S 3 .6 ± 0 .2

TRANSISTOR 2SC2538 equivalent

Abstract: 2SC2538
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2538 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2538 is a silicon NPN epitaxial planar type transistor designed fo r RF amplifiers on V H F band mobile radio applications. Dimensions in mm 0 5 .1 M A X FEATURES

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA B ias R esistor Transistor M UN 2211T1 S E R IE S NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M otorola Preferred D e vices This new series of digital transistors is designed to replace a single device and its

c2610 transistor

Abstract: C2610 transistor C2610 R947 inductors 50 micro-henry UTV200 L2046 transistor C647 1 microhenry inductor IN4148
Contextual Info: UTV200 20 Watts, 26.5 Volts, Class A UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE The UTV 200 is a COMMON EMITTER transistor capable of providing 20 Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. The transistor includes double input prematching for full broadband capability.

8D438

Abstract: 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA
Contextual Info: MOTOROLA SC -CXSTRS/R “Tb FÏ 6 3 6 7 2 5 4 M O T O R O L A SC X S T R S / R F 96 D 80 596 TECHNICAL DATA D 7 r'i3-'/f 4 AMPERE POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . for amplifier and switching applications Complementary

2SK798

Abstract: M27555
Contextual Info: 98D „ c r F I E C T R O N IC S 18945 IN C N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ^fl sgggì - D E | m 2 7 S 2 5 GDlflci4S 3 l'es 2 DESCRIPTION The 2SK798 is N-Channel MOS Field Effect Power Transistor K 7 9 8 PACKAGE DIMENSIONS designed for solenoid, motor and lamp driver.

IC lc 8635 320

Contextual Info: ERICSSON ^ PTB 20011 20 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor Description The 20011 is an NPN com m on em itter UHF power transistor intended for 26.5 Vdc class A operation from 470 to 860 MHz. It is rated at 20 w atts p-sync output power, and may be used for both CW and PEP

2SC5347A

Abstract: ITR08158 ITR08159 ENA1087
Contextual Info: 2SC5347A Ordering number : ENA1087 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5347A High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications Features • High-frequency medium output amplification