TRANSISTOR 86 Y Search Results

2N 326 Transistor

Abstract: transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor
Contextual Info: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV

2SC1008

Contextual Info: 东莞市华远电子有限公 司 DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR（NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 W（Tamb=25℃）

TIL186

Contextual Info: TILI 86-1, TILI 86-2, TIL186-3, TIL186 4 AC INPUT OPTOCOUPLERS 0 2 9 8 1 , DECEMBER 1 9 8 6 -R E V IS E D JUNE 198 9 • A-C Signal Input • Choice of Four Current Transfer Ratios • Gallium Arsenide Dual-Diode Infrared Sources Coupled to a Silicon NPN Photo-Transistor

74c74

Contextual Info: -JSntnm [p[M>}[p yj Tr ©ÄTTÄIL ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* * (FORMERLY 86) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)

Contextual Info: i - 86D 0 1 86 0 m ObE D N AUER PHILIPS/DISCRETE D T - bbSBTBl DDIMDIS 3 T" 7 3 BLX97 MAINTENANCE TYPE U.H.F. LINEAR POWER TRANSISTOR N-P-N m ulti-em itter silicon planar epitaxial transistor primarily fo r use in linear u.h.f. amplifiers for television transposers and transmitters.

BLW 95

Contextual Info: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

MAX713 equivalent

Abstract: MAX713 15V-to-40V MAX726 pnp transistor OP AMP 5A OUTPUT "Switching Regulator" npn switching transistor Ic 5A PWM SWITCH MODE AN86
Contextual Info: Maxim > App Notes > BATTERY MANAGEMENT Keywords: Switch-Mode Battery Charger Delivers 5A Jul 09, 1998 APPLICATION NOTE 86 Switch-Mode Battery Charger Delivers 5A The fast-charge controller IC3 Figure 1 normally directs current to the battery via an external pnp transistor.

an5296

Abstract: AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 FN532 CA30
Contextual Info: CA3146, CA3146A, CA3183, CA3183A T O DU C T TE PR E O DU C L R O P S E T OB U 3 BSTIT , CData 308Sheet LE SU 86 A POSSIB 3046, CA30 CA May 2001 FN532.6 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a

STM6967

Contextual Info: Green Product STM6967 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 86 @ VGS=-10V -60V

K60A08J

Abstract: TK60A08J1
Contextual Info: TK60A08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK60A08J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 86 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)

TK60D08J1

Contextual Info: TK60D08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK60D08J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 86 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)

2005A

Abstract: 2SC3000 J160 transistor marking JB
Contextual Info: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

HTGB

Contextual Info: W hpl HEW LETT mL'fim P A C K A R D 4.8 V NPN Silicon Bipolar Common Em itter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed p ulse width = 577 [isec, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout

QM5HL-24

Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
Contextual Info: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer

Buck-Boost Converter advantages

Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
Contextual Info: ICs: SMPS, CoolSET TM – Discretes: CoolMOS TM, thinQ! TM Power Management & Supply AC/DC Selection Guide www.infineon.com/power May 2006 Introduction T O D A Y ’ S M O D E R N L I F E S T Y L E leads to a fast-growing energy requirement as more and more people are able to afford electronic equipment.

pj 86 diode

Abstract: pj 84 diode pj 48 diode PJ 63 diode ke92 Westinghouse diode WESTINGHOUSE ELECTRIC motor ac WESTINGHOUSE dc motor KE924503 pj 17 diode
Contextual Info: 7294621 POWEREX INC Tâ Dim A B C D E F G H J K L M N O P Q R S T U V w X y b Ë J 72TML51 ODODTSO t. Inches 3.70 3.150+,020 .768 .79 .394 3.386 2.913 2.48 1.89 .472 .236 .118 .197 .551 .709 .059 .217 1.50 1.22 1.181 .339 .118 .295 T-33-35 Millimeters 94 80±.25

KE524503

Abstract: ke92 ke721k03 KEF24503HB KE721K03HB KED245A1 KE524510HB KE72 ked2 kee2
Contextual Info: P O U E R E X INC BSE J> • 72^51 DGG37MT b « P R X T-33-3r mmtnex_ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14

TLP181GR

Abstract: BAV756S ZR431 KOA RK73B 333G BAV99W BC846 PF600-1 transistor bc846 TLP181-GR
Contextual Info: PF600-1 AC Power Fail Warning Circuit Application Note OBSOLETE PRODUCT Contact factory for replacement model An AC Power Fail Warning Circuit for the PF600-1 In this application note, you will find a circuit described that provides for an AC Power Fail warning function for use in conjunction with the PF600-1.

ke52

Abstract: diode in 5401 B21 diode
Contextual Info: m/nota POtilEREX INC 3^E • 7 2 ci L»b21 000444b Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 420 Avenue 6, Durand, BP107, 72003 Le Mans, France (43) 41.14.14 4 »PRX KE525505 Tentative Six-Darlington

sanyo wx series

Abstract: STK401-130 SANYO wx capacitor mg-250 STK400-010 STK401-010 sanyo wx
Contextual Info: Ordering num ber: EN4897 Thick Film Hybrid 1C STK401-130 Two-Channel AF Power Amplifier + power supply 100 W + 100 W Minimum, THD = 0.4% No. 4897 SA\YO i Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin

transistor p86

Abstract: sps transistor p88 transistor transistor p85 transistor p89 p83 transistor SPI140-01 transistor ti p80 transistor P84 transistor p83
Contextual Info: rSA N Y O S E M IC O N D U C T O R CORP 7b D Ë J 7=1^7071= D O O a S l? S p g ~ Light Emitting Diode 7 9 9 7 0 7 6 SANYO SEMICONDUCTOR CORP •7:+ h 76C 0 2 2 1 7 D T -V /- 7 3 Photo Transistor S it » -*» Front View « a A « m #f I B * « it Mofd Type

bi 370 transistor e

Abstract: Westinghouse diode bi 370 transistor Westinghouse power diode WESTINGHOUSE ELECTRIC ke92 KE92450510 westinghouse power transistor transistor al fm westinghouse ac motor
Contextual Info: 7 2 9 4 6 2 1 P O W E R E X INC ¡bi 7 5 T 4 LiH 1 ODOQTSB Six/Pac Darlington TRANSISTOR „ Modules Dim A B C D E F G H J K L M N O P Q R S T U V w X Y Inches 3.70 3.150+.020 .768 .79 .394 3.386 2.913 2.48 1.89 .472 .236 .118 .197 .551 .709 .059 .217 1.50

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

TRANSISTOR 106 d1

Abstract: tms320 motor control 106d1 74HC 74HC86 TMS320 TMS320C14
Contextual Info: TMS320 DSP Number 86 DESIGNER’S NOTEBOOK Symmetric PWM Outputs Generation with the TMS320C14 DSP Contributed by Zhenyu Yu Design Problem How do I generate symmetric PWM outputs with the TMS320C14? Solution Pulse Width Modulated PWM signal generation is crucial to many motor and motion