TRANSISTOR 7150 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2SC4107

Abstract: ITR06315 ITR06316 ITR06313 ITR06314
Contextual Info: Ordering number:ENN2472A NPN Triple Diffused Planar Silicon Transistor 2SC4107 400V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching . · Wide ASO. · Adoption of MBIT process.

2SC4125

Abstract: ITR06381 ITR06382 ITR06383 ITR06384 ITR06385 transistor 2SC4125
Contextual Info: Ordering number:ENN2954 NPN Triple Diffused Planar Silicon Transistor 2SC4125 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Adoption of MBIT process. · On-chip damper diode. · High breakdown voltage VCBO=1500V .

2SC4125

Contextual Info: Ordering number:ENN2954 NPN Triple Diffused Planar Silicon Transistor 2SC4125 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Adoption of MBIT process. · On-chip damper diode. · High breakdown voltage VCBO=1500V .

Contextual Info: Ordering number:ENN2962 NPN Triple Diffused Planar Silicon Transistor 2SC4124 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Adoption of MBIT process. · On-chip damper diode. · High breakdown voltage VCBO=1500V .

2SC4108

Abstract: ITR06322 ITR06323 ITR06324 ITR06325 ITR06326
Contextual Info: Ordering number:ENN2473A NPN Triple Diffused Planar Silicon Transistor 2SC4108 400V/12A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching. · Wide ASO. · Adoption of MBIT process.

2SC4124

Abstract: ITR06371 ITR06372 ITR06373 ITR06374 ITR06375
Contextual Info: Ordering number:ENN2962 NPN Triple Diffused Planar Silicon Transistor 2SC4124 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Adoption of MBIT process. · On-chip damper diode. · High breakdown voltage VCBO=1500V .

2SC4109

Abstract: ITR06331 ITR06332 ITR06333 ITR06334 ITR06335
Contextual Info: Ordering number:ENN2474A NPN Triple Diffused Planar Silicon Transistor 2SC4109 400V/16A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching. · Wide ASO. · Adoption of MBIT process.

2SC4106

Abstract: transistor 2sc4106 ITR06304 ITR06305 ITR06306 ITR06307
Contextual Info: Ordering number:ENN2471A NPN Triple Diffused Planar Silicon Transistor 2SC4106 400V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching. · Wide ASO. · Adoption of MBIT process.

7MN05S

Abstract: ITR06895 ITR06897 ITR06898
Contextual Info: 7MN05S Ordering number : EN8393A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 7MN05S High-Frequency General-Purpose Amplifier Applications Features • • • • High power gain. High fT fT=750MHz . Complementary pair with the 7MP05S.

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

MCH4008

Abstract: TB 2920
Contextual Info: MCH4008 Ordering number : ENN8395 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.

2SC4123

Abstract: ITR06361 ITR06362 ITR06363 ITR06364 ITR06365
Contextual Info: Ordering number:ENN2956 NPN Triple Diffused Planar Silicon Transistor 2SC4123 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

Contextual Info: Ordering number:ENN2956 NPN Triple Diffused Planar Silicon Transistor 2SC4123 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

Contextual Info: 3MN03S Ordering number : ENN8392 NPN Epitaxial Planar Silicon Transistor 3MN03S High-Frequency General-Purpose Amplifier Applications Features • • Ultrasmall-sized package enabiling compactness and slimness of sets. High fT and small Cre fT=320MHz typ, Cre=0.95pF typ .

transistor zo 607

Abstract: 15GN01F
Contextual Info: 15GN01F Ordering number : ENN7782 NPN Epitaxial Planar Silicon Transistor 15GN01F VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications Features • • • Small ON-resistance [Ron=2Ω IB=3mA ]. Small output capacitance [Cob=1.05pF (VCB=10V)].

15GN01S

Contextual Info: 15GN01S Ordering number : ENN7768 NPN Epitaxial Planar Silicon Transistor 15GN01S VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications Features • • • Small ON-resistance [Ron=2Ω IB=3mA ]. Small output capacitance [Cob=1.0pF (VCB=10V)].

AN 8054

Abstract: 8054 transistor transistor zo 607 15GN01F
Contextual Info: 15GN01F Ordering number : ENN7782 NPN Epitaxial Planar Silicon Transistor 15GN01F VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications Features • • • Small ON-resistance [Ron=2Ω IB=3mA ]. Small output capacitance [Cob=1.05pF (VCB=10V)].

7807 transistor

Abstract: 15GN01S IC 4047 BE
Contextual Info: 15GN01S Ordering number : ENN7768 NPN Epitaxial Planar Silicon Transistor 15GN01S VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications Features • • • Small ON-resistance [Ron=2Ω IB=3mA ]. Small output capacitance [Cob=1.0pF (VCB=10V)].

transistor bf 760

Abstract: MCH4008 945 npn
Contextual Info: MCH4008 Ordering number : ENN8395 NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .

MAX 77693

Abstract: ic 6264 ic 4074 55GN01C
Contextual Info: 55GN01C Ordering number : ENN7769 NPN Epitaxial Planar Silicon Transistor 55GN01C UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=9.5dB typ f=1GHz . Specifications Absolute Maximum Ratings at Ta=25°C

15GN01C

Contextual Info: Ordering number : ENN7724 15GN01C NPN Epitaxial Planar Silicon Transistor 15GN01C VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications Features • • Package Dimensions Small ON-resistance [Ron=2Ω IB=3mA ]. Small output capacitance [Cob=1.2pF (VCB=10V)].

15GN01C

Abstract: ta 7061 4425 ic
Contextual Info: Ordering number : ENN7724 15GN01C NPN Epitaxial Planar Silicon Transistor 15GN01C VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications Features • • Package Dimensions Small ON-resistance [Ron=2Ω IB=3mA ]. Small output capacitance [Cob=1.2pF (VCB=10V)].

3MN03S

Abstract: ITR05148 ITR05149 ITR05150 ITR05152 marking WA
Contextual Info: 3MN03S Ordering number : EN8392A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 3MN03S High-Frequency General-Purpose Amplifier Applications Features • • Ultrasmall-sized package enabiling compactness and slimness of sets. High fT and small Cre fT=320MHz typ, Cre=0.95pF typ .