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    TRANSISTOR 7135A Search Results

    TRANSISTOR 7135A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR 7135A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    7133A

    Abstract: 7130a 1 equivalent 7130A TRANSISTOR e2v ccd transistor 7135A CCD-Sensor for e2v transistor 7133A 7134C scientific imaging technologies 7132A
    Contextual Info: CCD30–11 Open Electrode High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Open Electrode Structure for Enhanced Quantum Efficiency


    Original     		CCD30 CCD30-11 CCD30-11, 7133A 7130a 1 equivalent 7130A TRANSISTOR e2v ccd transistor 7135A CCD-Sensor for e2v transistor 7133A 7134C scientific imaging technologies 7132A PDF

    CCD30-11

    Abstract: 7133A S11071 CCD30 M-2011 tdi ccd E2V transistor 7133A
    Contextual Info: CCD30–11 Open Electrode High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Open Electrode Structure for Enhanced Quantum Efficiency


    Original     		CCD30 CCD30-11 7133A S11071 M-2011 tdi ccd E2V transistor 7133A PDF

    tdi ccd E2V

    Abstract: e2v ccd tdi ccd ccd tdi binning CCD30-11 7133A Scientific Imaging Technologies TDI ccd sensor
    Contextual Info: CCD30-11 Deep Depletion Sensor High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Deep Depletion for Enhanced Infrared Sensitivity * Symmetrical Anti-static Gate Protection * Anti-blooming Readout Register


    Original     		CCD30-11 CCD3011, tdi ccd E2V e2v ccd tdi ccd ccd tdi binning 7133A Scientific Imaging Technologies TDI ccd sensor PDF