TRANSISTOR 6J U Search Results

Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)

motorola transistor cross reference

Abstract: MRF660 MRF648 Motorola transistors MRF630 transistor 7905
Contextual Info: MOTOROLA SC XSTRS/R F 4fe,E D WM b 3 b ? 2 S 4 00=13843 =1 • M O T b RF Power Bipolar Transistors — UHF Transistors (continued) T -3 3 ^ 7 5 0 0 -1 0 0 0 MHz BAND Capable of operation in either class AB or C, the following devices are designed for operation to 1 GHz. Gold metallized die, diffused

transistor over current detection

Abstract: d2718 100 volt to 24 volt regulator circuit diagram RC4193 texas instruments circuit diagram RM4193 5 volt ic voltage regulator circuit diagram voltage regulator 6 volt
Contextual Info: T EXAS INSTR Ö961724 -CLIN/INTFO TEXAS SS DË] 0^1724 DG3MSbt IN STRCLÌN /ÌN TFcf 5 |~ 55C 34 56Ó T -58-11-23 LINEAR INTEGRATED CIRCUITS TYPES RM4193, RC4193 MICROPOWER SWITCHING REGULATOR D 27 18, SEP T EM B ER 1983 H igh Efficiency . . . 8 0 % T yp R M 4 1 9 3 . . J G

Avantek amplifier UTC

Abstract: AVANTEK utc AVANTEK utc 543 Avantek* UTC utc215 AVANTEK uto AVANTEK transistor avantek Low Noise Amplifier
Contextual Info: T hat HEWLETT mLUM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC/PPA 543 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz The 543 Series is a thin-film RF bipolar amplifier using lossless

transistor 6J U

Contextual Info: TEXAS INSTR -CL IN/INTFO SS Ô961724 TE XAS De J DG3MSbt 5 | ~ IN STRCLÏN /ÎN TFcf 55C 3 4 56ó T -58-11-23 LINEAR INTEGRATED CIRCUITS TYPES RM4193, RC4193 MICROPOWER SWITCHING REGULATOR D 27 18, SEP T EM B ER 1983 High Efficiency . . . 8 0 % T yp R M 4 1 9 3 . . J G

LDTA143EWT1G

Abstract: transistor 6j PNP marking 6J
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA143EWT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

ECG1351

Abstract: philips capacitor 35v
Contextual Info: * PHILIPS E C G INC 17E bbSBTSû 000522 4 =] ECG1351 Sem iconductors 25 W Dual A F PO T-74-05-01 Features • D e signed for hl-fl stereo am plifiers • Less than 0 .2 % harm onic distortion at full pow er level The ECG1351 is a self-contained high power

transistor j380

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10350 The RF Line M icrowave Pulse Power Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 350 W PEAK 1025-1150 MHz MICROWAVE POWER

BUH3150

Abstract: BUH315D TRANSISTOR L 287 A
Contextual Info: S C S -T H O M S O N RitlQOlOilLiOfiOiQOi BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY • U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE #E81734 (N . NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE.

transistor 2n5194

Abstract: Motorola transistors 2N5192
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N 5194 2N 5 1 95 * Silicon PNP Power Transistors ‘Motorola Prtftrrtd Devio* . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS

Contextual Info: 2SA1182LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.3 W (Tamb=25 C) Pluse Drain I CM : -0.5 mA Reverse Voltage V (BR)CBO : -40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER

Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm · Two devices are incorporated into an Extreme-Super-Mini (6 pin)

RN4989FE

Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)

RN4989FE

Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)

Contextual Info: W hat HEW LETT mL'nM P a c k a rd Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 511 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz • Low Noise: 2.3 dB Typ The 511 Series is an efficient

2n5882 motorola

Abstract: 2NS882
Contextual Info: MOTOROLA Order this document by 2M5882/D SEM ICONDUCTOR TECHNICAL DATA 2N5882 Silicon NPN High-Power Transistor Motorola Preferred Device . . . designed for general-purpose power amplifier and switching applications. • Collector-Emitter Sustaining Voltage —

Contextual Info: r r T SGS-THOMSON "* JÊ B U H 1215 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . S G S-T H O M S O N P R E F E R R E D S A L E S T Y P E . HIGH V O LT A G E CAPABILITY . V E R Y HIGH SWITCHING S P E E D APPLICATIONS: . HO RIZONTAL D EFLECTIO N FO R C O LO U R

powertech

Contextual Info: BIG IDEAS IN BIG POWER ” H p i PowerTecn • 500 A M P E R E S PT- 9 5 0 1 P T -9 5 Q 2 SILICON IMPIM TRANSISTOR FEATURES: v C E s a t . 0 .5V @ 300A h p g . V B E . 1.5V @ 3 0 0 A

pa80c

Abstract: nec mpa80c MPA80C UPA80C J2268 mpa-80 UPA80C equivalent
Contextual Info: % TC TRANSISTOR ARRAY ELECTRON D EV IC E /¿PA80C FLUORESCENT INDICATOR PANEL DRIVER PNP-NPN SILICO N EPITAXIAL TRAN SISTO R ARRAY DESCRIPTION The ;uPA80C is a monolithic array of seven PNP-NPN structured transistors. This device is especially suited for driving FIP Fluorescent Indicator Panel .

Contextual Info: SIEMENS SFH600 SERIES TRIOS * PHOTOTRANSISTOR OPTOCOUPLER FEATURES • High Current Transfer Ratios SFH600-0,40 to 80% SFH600-1, 63 to 125% SFH600-2,100 to 200% SFH600-3,160 to 320% • Isolation Test Voltage 1 Sec. , 5300 VACRMS • VCEsat 0.25 (£0.4) V, IF=10 mA, IC=2.5 mA

IRF74

Abstract: IRF742 IRF743
Contextual Info: [F@Mm°[M © IFHF IRF742.743 8 AMPERES 400, 350 VOLTS R|DS ON = 0.80 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Contextual Info: LITTON IND/LITTON SOLID, 5bE D ton • 5544200 0000510 T71 * L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3814 Preliminary Specifications FEATURES ■ Output Power 28 dBm @ 8 ghz ■ 1dB Power Gain 9 dB @ 8 g h z ■ 0.5 x 1400 nm Ti/Pt/Au G ate Two Cells

5330-5 harris

Contextual Info: HA-5330 HR H A R R IS S E M I C O N D U C T O R Very High Speed Precision Monolithic Sample and Hold Amplifier March 1993 Features Description 500ns 0.1% 650ns (0.01%) • Low Droop R ate. 0.01 (iV/ns • Very Low O ffset. 0.2mV