TRANSISTOR 6J U Search Results
TRANSISTOR 6J U Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 93425ADM/B |
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93425 - 1K X 1 TTL SRAM |
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| 27S185DM/B |
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27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 |
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TRANSISTOR 6J U Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin) |
Original |
RN4989FE | |
motorola transistor cross reference
Abstract: MRF660 MRF648 Motorola transistors MRF630 transistor 7905
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OCR Scan |
MRA0510-15H MRA0510-50H MRA0510-50H MRF653S MRF641W MRF654 MRF644W MRF646 MRF650W motorola transistor cross reference MRF660 MRF648 Motorola transistors MRF630 transistor 7905 | |
transistor over current detection
Abstract: d2718 100 volt to 24 volt regulator circuit diagram RC4193 texas instruments circuit diagram RM4193 5 volt ic voltage regulator circuit diagram voltage regulator 6 volt
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T-58-11-23 RM4193, RC4193 D2718, RM4193 RC4193 RM4193 transistor over current detection d2718 100 volt to 24 volt regulator circuit diagram texas instruments circuit diagram 5 volt ic voltage regulator circuit diagram voltage regulator 6 volt | |
Avantek amplifier UTC
Abstract: AVANTEK utc AVANTEK utc 543 Avantek* UTC utc215 AVANTEK uto AVANTEK transistor avantek Low Noise Amplifier
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PP-38 PPA--PP-38 MIL-HDBK-217E, UTC--21 5963-2538E Avantek amplifier UTC AVANTEK utc AVANTEK utc 543 Avantek* UTC utc215 AVANTEK uto AVANTEK transistor avantek Low Noise Amplifier | |
transistor 6J UContextual Info: TEXAS INSTR -CL IN/INTFO SS Ô961724 TE XAS De J DG3MSbt 5 | ~ IN STRCLÏN /ÎN TFcf 55C 3 4 56ó T -58-11-23 LINEAR INTEGRATED CIRCUITS TYPES RM4193, RC4193 MICROPOWER SWITCHING REGULATOR D 27 18, SEP T EM B ER 1983 High Efficiency . . . 8 0 % T yp R M 4 1 9 3 . . J G |
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RC4193 RM4193, RC4193 transistor 6J U | |
LDTA143EWT1G
Abstract: transistor 6j PNP marking 6J
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LDTA143EWT1G LDTA143EWT1G transistor 6j PNP marking 6J | |
ECG1351
Abstract: philips capacitor 35v
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ECG1351 T-74-05-01 ECG1351 11II1 ECQ1351 philips capacitor 35v | |
transistor j380Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10350 The RF Line M icrowave Pulse Power Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 350 W PEAK 1025-1150 MHz MICROWAVE POWER |
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MRF10350 F10350 350wPk MRF10350 transistor j380 | |
BUH3150
Abstract: BUH315D TRANSISTOR L 287 A
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BUH315D ISOWATT218 E81734 BUH315D ISOWATT218 BUH3150 TRANSISTOR L 287 A | |
transistor 2n5194
Abstract: Motorola transistors 2N5192
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2N5191, 2N5192 2N5194 2N5195 2N5193 transistor 2n5194 Motorola transistors 2N5192 | |
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Contextual Info: 2SA1182LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.3 W (Tamb=25 C) Pluse Drain I CM : -0.5 mA Reverse Voltage V (BR)CBO : -40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER |
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2SA1182LT1 OT-23 | |
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Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm · Two devices are incorporated into an Extreme-Super-Mini (6 pin) |
Original |
RN4989FE | |
RN4989FEContextual Info: RN4989FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin) |
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RN4989FE 000707EAA1 RN4989FE | |
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Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin) |
Original |
RN4989FE | |
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RN4989FEContextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin) |
Original |
RN4989FE RN4989FE | |
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Contextual Info: W hat HEW LETT mL'nM P a c k a rd Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 511 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz • Low Noise: 2.3 dB Typ The 511 Series is an efficient |
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44475A4 001DbT3 | |
2n5882 motorola
Abstract: 2NS882
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2M5882/D 2N5882/D 2n5882 motorola 2NS882 | |
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Contextual Info: r r T SGS-THOMSON "* JÊ B U H 1215 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . S G S-T H O M S O N P R E F E R R E D S A L E S T Y P E . HIGH V O LT A G E CAPABILITY . V E R Y HIGH SWITCHING S P E E D APPLICATIONS: . HO RIZONTAL D EFLECTIO N FO R C O LO U R |
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BUH1215 BUH1215 | |
powertechContextual Info: BIG IDEAS IN BIG POWER ” H p i PowerTecn • 500 A M P E R E S PT- 9 5 0 1 P T -9 5 Q 2 SILICON IMPIM TRANSISTOR FEATURES: v C E s a t . 0 .5V @ 300A h p g . V B E . 1.5V @ 3 0 0 A |
OCR Scan |
PB-500 18WIRE powertech | |
pa80c
Abstract: nec mpa80c MPA80C UPA80C J2268 mpa-80 UPA80C equivalent
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uPA80C uPA80C -50-l| juPA80C pa80c nec mpa80c MPA80C J2268 mpa-80 UPA80C equivalent | |
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Contextual Info: SIEMENS SFH600 SERIES TRIOS * PHOTOTRANSISTOR OPTOCOUPLER FEATURES • High Current Transfer Ratios SFH600-0,40 to 80% SFH600-1, 63 to 125% SFH600-2,100 to 200% SFH600-3,160 to 320% • Isolation Test Voltage 1 Sec. , 5300 VACRMS • VCEsat 0.25 (£0.4) V, IF=10 mA, IC=2.5 mA |
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SFH600-0 SFH600-1, SFH600-2 SFH600-3 E52744 SFH600 SFH600-1 | |
IRF74
Abstract: IRF742 IRF743
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IRF742 TC-25 IRF74. IRF742-Ã IRF74 IRF743 | |
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Contextual Info: LITTON IND/LITTON SOLID, 5bE D ton • 5544200 0000510 T71 * L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3814 Preliminary Specifications FEATURES ■ Output Power 28 dBm @ 8 ghz ■ 1dB Power Gain 9 dB @ 8 g h z ■ 0.5 x 1400 nm Ti/Pt/Au G ate Two Cells |
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D-3814 D-3814 2285C | |
5330-5 harrisContextual Info: HA-5330 HR H A R R IS S E M I C O N D U C T O R Very High Speed Precision Monolithic Sample and Hold Amplifier March 1993 Features Description 500ns 0.1% 650ns (0.01%) • Low Droop R ate. 0.01 (iV/ns • Very Low O ffset. 0.2mV |
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HA-5330 HA-5330 650ns 5330-5 harris | |