TRANSISTOR 6J U Search Results
TRANSISTOR 6J U Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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27S185DM/B |
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27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 |
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5962-8672601EA |
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Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) |
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TRANSISTOR 6J U Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin) |
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RN4989FE | |
transistor 6J UContextual Info: TEXAS INSTR -CL IN/INTFO SS Ô961724 TE XAS De J DG3MSbt 5 | ~ IN STRCLÏN /ÎN TFcf 55C 3 4 56ó T -58-11-23 LINEAR INTEGRATED CIRCUITS TYPES RM4193, RC4193 MICROPOWER SWITCHING REGULATOR D 27 18, SEP T EM B ER 1983 High Efficiency . . . 8 0 % T yp R M 4 1 9 3 . . J G |
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RC4193 RM4193, RC4193 transistor 6J U | |
LDTA143EWT1G
Abstract: transistor 6j PNP marking 6J
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LDTA143EWT1G LDTA143EWT1G transistor 6j PNP marking 6J | |
Contextual Info: 2SA1182LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.3 W (Tamb=25 C) Pluse Drain I CM : -0.5 mA Reverse Voltage V (BR)CBO : -40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER |
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2SA1182LT1 OT-23 | |
RN4989FEContextual Info: RN4989FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin) |
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RN4989FE 000707EAA1 RN4989FE | |
Contextual Info: W hat HEW LETT mL'nM P a c k a rd Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 511 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz • Low Noise: 2.3 dB Typ The 511 Series is an efficient |
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44475A4 001DbT3 | |
2n5882 motorola
Abstract: 2NS882
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2M5882/D 2N5882/D 2n5882 motorola 2NS882 | |
powertechContextual Info: BIG IDEAS IN BIG POWER ” H p i PowerTecn • 500 A M P E R E S PT- 9 5 0 1 P T -9 5 Q 2 SILICON IMPIM TRANSISTOR FEATURES: v C E s a t . 0 .5V @ 300A h p g . V B E . 1.5V @ 3 0 0 A |
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PB-500 18WIRE powertech | |
pa80c
Abstract: nec mpa80c MPA80C UPA80C J2268 mpa-80 UPA80C equivalent
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uPA80C uPA80C -50-l| juPA80C pa80c nec mpa80c MPA80C J2268 mpa-80 UPA80C equivalent | |
Contextual Info: SIEMENS SFH600 SERIES TRIOS * PHOTOTRANSISTOR OPTOCOUPLER FEATURES • High Current Transfer Ratios SFH600-0,40 to 80% SFH600-1, 63 to 125% SFH600-2,100 to 200% SFH600-3,160 to 320% • Isolation Test Voltage 1 Sec. , 5300 VACRMS • VCEsat 0.25 (£0.4) V, IF=10 mA, IC=2.5 mA |
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SFH600-0 SFH600-1, SFH600-2 SFH600-3 E52744 SFH600 SFH600-1 | |
IRF74
Abstract: IRF742 IRF743
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IRF742 TC-25 IRF74. IRF742-Ã IRF74 IRF743 | |
2sc995
Abstract: Toshiba 2SC995 2SC996 rb1a MA522 Produced by Perfect Crystal Device Technology
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2sc995 2sc996 100MHz 2SC995 Toshiba 2SC995 2SC996 rb1a MA522 Produced by Perfect Crystal Device Technology | |
mosfet BF964Contextual Info: N AMER PHILIPS/DISCRETE DbE D fc.b53131 0012156 b • u I _ a BF964: _: T-3 I-2 S' SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for v.h.f. applications in television tuners, especially in r.f. stages and mixer stages in S-channel |
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b53131 BF964: mosfet BF964 | |
litton
Abstract: Litton Solid State transistor 2501 D2501 Litton Systems 250-1 MAG D-2501 RF FET TRANSISTOR 3 GHZ VDS35 55M4S
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SSM42GD D-2501 I--190- D-2501 2285C litton Litton Solid State transistor 2501 D2501 Litton Systems 250-1 MAG RF FET TRANSISTOR 3 GHZ VDS35 55M4S | |
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Contextual Info: TO SHIBA RN4989 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN4989 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS 2.1 ±0.1 • Including Two Devices in US6 (Ultra Super Mini Type |
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RN4989 47kil 22kfl | |
Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin) |
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RN4989FE | |
2SK2145Contextual Info: TOSHIBA 2SK2145 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 2 1 45 Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. • . • • + 0.2 Including Two Devices in SM5 Super Mini Type with 5 Leads. High |Yfs| : |Yfs| = 15mS (Typ.) at VDS = 10V, VGS = 0 |
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2SK2145 --50V --30V 2SK2145 | |
L129Contextual Info: MPF102 SILICO N Silicon N-channel junction field-effect transistor designed for VHF amplifier and m ixer applications. M A X IM U M R A T IN G S l*A = 2 S * C unlM S o t h e r « * ! n o t« i> Symbol Value Unit Draln-Source Voltage VDS 25 Vdc Draln-Gate Voltage |
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RN4989FEContextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin) |
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RN4989FE RN4989FE | |
NDS356APContextual Info: Ju ly 1996 N ational Semiconductor ’ NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features These P -Channel logic level enhancement mode power field effect transistors are produced using Nationals, proprietary, high cell density, DMOS |
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NDS356AP b501130 0Q3CI754 NDS356AP | |
2N4300Contextual Info: TYPE 2N4300 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR • TYPE 2N4300 BULLETIN NO. DL-S 668562, FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 15 W at 100°C Cose Temperature • Max VtE jat of 0.3 V at 1 A l ( • Typ t enof 130 ns at 1 A lc |
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2N4300 | |
DTA114TET1
Abstract: DTA115EET1
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DTA114EET1 SC-75/SOT-416 DTA114TET1 DTA115EET1 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LDTA143EET1 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor |
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LDTA143EET1 SC-89 | |
Contextual Info: MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3 Digital Transistors BRT R1 = 4.7 kW, R2 = 4.7 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single |
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MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3 DTA143E/D |