TRANSISTOR 632P Search Results

TRANSISTOR 632P Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR 632P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor 632p Abstract: 632p Contextual Info: F A I R C H I L D M ICDNDUCTQ R Junel 996 tm NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS	OCR Scan	NDC632P transistor 632p 632p	PDF
Contextual Info: Junel996 N NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese P-C hannel logic level e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ationals proprietary, high cell density, DMOS	OCR Scan	Junel996 NDC632P	PDF
Contextual Info: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL230 D, R, H 2N7275D, 2N7275R 2N7275H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 5A.200V, RDS(on) >0.500Q T0-205AF • Second Generation Rad Hard MOSFET Results From New Design Concept*	OCR Scan	FRL230 2N7275D, 2N7275R 2N7275H T0-205AF 100KRAD 300KRAD 3000KRAD 632UIS 632PH0T0	PDF

Catalog Datasheet

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transistor 632p

Abstract: 632p
Contextual Info: F A I R C H I L D M ICDNDUCTQ R Junel 996 tm NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS

OCR Scan

NDC632P transistor 632p 632p

PDF

Contextual Info: Junel996 N NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese P-C hannel logic level e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ationals proprietary, high cell density, DMOS

OCR Scan

Junel996 NDC632P

PDF

Contextual Info: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL230 D, R, H 2N7275D, 2N7275R 2N7275H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 5A.200V, RDS(on) >0.500Q T0-205AF • Second Generation Rad Hard MOSFET Results From New Design Concept*

OCR Scan

FRL230 2N7275D, 2N7275R 2N7275H T0-205AF 100KRAD 300KRAD 3000KRAD 632UIS 632PH0T0

PDF