TRANSISTOR 600V 75A Search Results

IRGPC56

Contextual Info: INTERNATIONAL RECTIFIER SbE D • 4fl5S45S OOlDbaT 1 ■ Data Sheet No. PD<9.662 T - 3^-63 \. INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC56 600V, 7SA 600V, 75A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate

transistor RJH 30

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE _ INSULATED TYPE QM75TX-HB • lc • Vcex • hFE Collector current. 75A Collector-emitter voltage. 600V DC current gain. 750

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-H lc Collector current. 75A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type UL Recognized

i321 diode

Abstract: I321 X 25 UMI diode i321 Mitsubishi transistor
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75TX-H HIGH POWER SWITCHING USE INSULATED TYPE QM75TX-H • lc • V c ex • hFE Collector current.75A Coilector-emitter voltage. 600V DC current gain.75

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75TX-H HIGH POWER SWITCHING USE INSULATED TYPE QM75TX-H • lc Collector current. 75A • Vcex Collector-emitter voltage.600V • hFE DC current gain. 75 • Insulated Type

Mitsubishi transistor

Abstract: mitsubishi servo power module
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-H • • • • • lc Collector current. 75A V cex Collector-emitter voltage. 600V hFE DC current gain.75

Contextual Info: AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C C VCES = 600V IC(Nominal) = 75A

auirgp4066d1

Abstract: AUIRGP4066 AUP4066D1 auirgp4066d1-e
Contextual Info: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • • • VCES = 600V Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses

IGBT 4000V ICM 400A

Abstract: IGBT 4000V
Contextual Info: PD - 96410B AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C VCES = 600V Low VCE ON Trench IGBT Technology Low switching losses IC(Nominal) = 75A

Contextual Info: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses

g2501

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75CY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75CY-H I • lc i Collector c u rre n t. 75A • V cex Collector-em itter v o lta g e . 600V • Hfe DC current g a in . 75

Contextual Info: IRGP4690DPbF IRGP4690D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 90A, TC = 100°C C C tSC ≥ 5 s, TJ max = 175°C G VCE(on) typ. = 1.70V @ IC = 75A E n-channel Applications • Industrial Motor Drive • Inverters

G40N60

Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3
Contextual Info: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction

G40N60

Abstract: g40n60c3 HGTG40N60C3 LD26 RHRP3060 g40n
Contextual Info: HGTG40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction

AP50G60W-HF

Abstract: 50A33
Contextual Info: AP50G60W-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ. =2.5V@IC=40A ▼ RoHS Compliant & Halogen-Free VCES 600V IC 40A G C C

irf 1830

Abstract: 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
Contextual Info: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

irf 1830

Abstract: C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K
Contextual Info: PD - 94799 IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

Contextual Info: ADVANCED POWER TECHNOLOGY blE D Bi QSSTIQT 0000Ô56 244 B A V P • R A d v a n ced F M P o w er Te c h n o l o g y APT75GL60BN 600V 75A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

vqe 13

Abstract: APT75GL60BN BAVP VQE13
Contextual Info: A D VA NC E D POWER TECHNOLOGY b lE D • □ 2 5 7 T D CI □ □ □ □ a S f l ■R FM 244 BAVP ADVANCED P ow er Techno lo g y * APT75GL60BN 600V 75A POWER MQS IV IG B T N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

tyco igbt

Abstract: igbt tyco Transistor GE 44
Contextual Info: V23990-P186-A10 flow PIM 2, 600V, 75A Version 0601 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Input Rectifier Bridge Gleichrichterbrücke Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE INSULATED TYPE QM75E2Y/E3Y-2H lc Collector current. 75A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain. 75 Insulated Type

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-2HB lc Collector current. 75A Vcex Collector-emitter voltage 1000V hFE DC current gain. 750 Insulated Type UL Recognized

Mitsubishi transistor

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE f INSULATED TYPE I ! QM75E2Y/E3Y-2H 1 t • Ic Collector cu rren t. 75A j • V cex • hFE Collector-em itter v o lta g e . 1000V s DC current g a in . 75 j

7MBP75RA120

Abstract: IPM 1200V/75A 7MBP75RA-120
Contextual Info: 7MBP75RA120 1200V / 75A 7 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · Compatible with existing IPM-N series packages · High performance and high reliability IGBT with overheating protection