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    TRANSISTOR 6 B Search Results

    TRANSISTOR 6 B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy
    5962-8672601EA
    Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) PDF Buy

    TRANSISTOR 6 B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain NPN wideband transistor in a plastic


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    BFR93A BFT93. MSB003 R77/02/pp13 PDF

    TRANSISTOR ML6

    Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain


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    BFQ270 OT172A1. TRANSISTOR ML6 TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor PDF

    LB1273R

    Contextual Info: Ordering number: EN 667B Monolithic Digital 1C I L B 1 2 73R N 0 .6 6 7 B 6-Unit, Darlington Transistor Array The circuit construction of this IC is a Darlington transistor array with six units, most suitable for printer hammer drive, lamp, and relay drive.


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    18-digit 230mA LB1273R PDF

    Contextual Info: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C i Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation VcBO -6 0 -40 -5 -6 0 0


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    KST2907 DBS11Q 0Q25111 PDF

    Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-6 0.20 (0.008) M VIEW C C P6.049 CL 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE e b 6 INCHES 5 4 CL CL E 1 2 8 PIN 1 INDEX AREA A E1 3 e1 MILLIMETERS SYMBOL MIN MAX


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    SC70-6) 5M-1994. MO203AB. PDF

    MO203AB

    Abstract: 049B TRANSISTOR Outlines MO-203-AB SC70-6 E1-CD TRANSISTOR A1
    Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-6 0.20 (0.008) M P6.049B VIEW C C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL MILLIMETERS e b SYMBOL 6 5 4 CL CL E1 E 1 2 3 e1 C D CL A1 SEATING PLANE -C- 0.80


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    SC70-6) 5M-1994. MO203AB. MO203AB 049B TRANSISTOR Outlines MO-203-AB SC70-6 E1-CD TRANSISTOR A1 PDF

    IR2405

    Contextual Info: SHARP E L E K / M ELEC i SE o | D IV aiaa?^ aoai^a . ? ! IR2405 6-Unit 400mA Darlington Transistor Array T ' 5 2 - / 3 - * 7 y— IR2405 • 6-Unit 400mA Darlington Transistor Array Pin Connections Description The IR2405 is a 6-circuit driver. This IC can be


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    400mA IR2405 IR2405 400mA 14-pin 200mA PDF

    marking Y1 transistor

    Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A
    Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring


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    FMB2227A 300mA. 150mA, 300mA, 150mA 300mA 100kHz 100MHz lwpPr19 marking Y1 transistor transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A PDF

    marking Y1 transistor

    Abstract: fairchild pin 1 marking
    Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring


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    FMB2227A 300mA. marking Y1 transistor fairchild pin 1 marking PDF

    a 4x transistor

    Abstract: MO203AB SC70-6 MO-203-AB
    Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-6 0.20 (0.008) M P6.049 VIEW C C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL INCHES e b SYMBOL 6 5 4 CL CL E1 E 1 2 3 e1 C D CL A A2 SEATING PLANE A1 -C- WITH


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    SC70-6) 5M-1994. MO203AB. a 4x transistor MO203AB SC70-6 MO-203-AB PDF

    MO203AB

    Abstract: SC70-6 MO-203-AB
    Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-6 0.20 (0.008) M P6.049A VIEW C C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL INCHES e b SYMBOL 6 5 4 CL CL E1 E 1 2 3 e1 C D CL SEATING PLANE A1 -C- WITH b PLATING


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    SC70-6) 5M-1994. MO203AB. MO203AB SC70-6 MO-203-AB PDF

    transistor Y2

    Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6
    Contextual Info: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful


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    FMB3946 100mA 100MHz 100MHz 100uA, fmb3946 lwpPr23 transistor Y2 Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp Supersot 6 PDF

    0118 transistor

    Abstract: MO178AB MO178 MO-178-AB P6.064 Package L2 SOT23-6 MO-178AB
    Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SOT23-6 0.20 (0.008) M P6.064 VIEW C C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL INCHES e b SYMBOL 6 5 4 CL CL E1 E 1 2 3 e1 C D CL A A2 SEATING PLANE A1 -C- WITH


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    OT23-6) 5M-1994. SC-74 MO178AB. 0118 transistor MO178AB MO178 MO-178-AB P6.064 Package L2 SOT23-6 MO-178AB PDF

    2SC5600

    Abstract: 2SC5603 marking NT
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA843TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 6-pin lead-less minimold package • 2 different built-in transistors (2SC5603, 2SC5600)


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    PA843TD 2SC5603, 2SC5600) S21e2 2SC5603 2SC5600 2SC5600 2SC5603 marking NT PDF

    smd code HF transistor

    Abstract: BLF3G21-6
    Contextual Info: BLF3G21-6 UHF power LDMOS transistor Rev. 01 — 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance


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    BLF3G21-6 ACPR600k BLF3G21-6 smd code HF transistor PDF

    transistor on 4409

    Abstract: transistor on 4408 2NS399 2N5399 TA968 A7016 2n 4409
    Contextual Info: TYPE 2N5399 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L-S 6 8 1 0 6 6 6 . S E P T E M B E R 1966 RADIATION-TOLERANT TRANSISTOR FOR LOW-POWER GENERAL PURPOSE VHF-UHF AMPLIFIER AND SATURATED-SWITCHING APPLICATIONS • Guaranteed I cbo/ hfE and V«,«., after lx lO 15 Fast Neutrons/cm2


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    2N5399 2NS332 transistor on 4409 transistor on 4408 2NS399 TA968 A7016 2n 4409 PDF

    2N1617

    Contextual Info: 2N1617 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR  1 0 .1 6 (0 .4 0 0 ) 1 7 .2 7 (0 .6 8 0 ) 1 9 .0 5 (0 .7 5 0 ) m in . ! • Bipolar Power Transistor 1 5 .4 2 (0 .6 0 7 ) m a x . • TO–61 Hermetic Package 7 .6 2 (0 .3 0 0 ) 8 .8 9


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    2N1617 300mA 2N1617 PDF

    2N1616

    Abstract: 60V transistor npn 2a
    Contextual Info: 2N1616 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR  1 0 .1 6 (0 .4 0 0 ) 1 7 .2 7 (0 .6 8 0 ) 1 9 .0 5 (0 .7 5 0 ) m in . ! • Bipolar Power Transistor 1 5 .4 2 (0 .6 0 7 ) m a x . • TO–61 Hermetic Package 7 .6 2 (0 .3 0 0 ) 8 .8 9


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    2N1616 300mA 2N1616 60V transistor npn 2a PDF

    TRANSISTOR D 570

    Abstract: BF 145 transistor transistor bf
    Contextual Info: 2SC D • Ö23SLQS 0GQ4S23 Q H S I E G r - 3 t-rs ~ BF 568 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 5 6 8 is a PNP silicon planar transistor with passivated surface in TO 2 3 6 plastic package 2 3 A 3 DIN 4.1869 . The transistor is particularly suitable for use in low-noise gain-controlled


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    23SLQS 0GQ4S23 TRANSISTOR D 570 BF 145 transistor transistor bf PDF

    marking 2w

    Abstract: 2SC5600 2SC5737
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5737, 2SC5600)


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    PA858TC 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 marking 2w 2SC5600 2SC5737 PDF

    Contextual Info: DF N1 10B -6 BC857QAS 45 V, 100 mA PNP/PNP general-purpose transistor 25 July 2014 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847QAS.


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    BC857QAS DFN1010B-6 OT1216) BC847QAS. BC847QAPN. AEC-Q101 PDF

    Contextual Info: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.


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    BC847QAS DFN1010B-6 OT1216) BC857QAS. BC847QAPN. AEC-Q101 PDF

    4420 Transistor

    Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
    Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


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    ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748 PDF

    M54539P

    Abstract: M54539
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54539P 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54539P six-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


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    M54539P 700mA M54539P 700mA) M54539 PDF