TRANSISTOR 6 B Search Results

1417 transistor

Abstract: max 1417 1417-6A
Contextual Info: 1417-6A 6 Watts, 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION The 1417-6A is an internally matched, COMMON BASE transistor capable of providing 6 watts of CW RF Output power across the 1400-1700 MHz band. This transistor is specifically designed for telemetry and telecommunications

10A060

Abstract: 20989 78561 MAG 1832 55FT
Contextual Info: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

Contextual Info: RN2972FS,RN2973FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2972FS,RN2973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin)

ARC-182

Abstract: transistor Common emitter configuration transistor t 04 27 PHOI an/ARC-182
Contextual Info: an AMP company CW Power Transistor, 30 - 400 MHz 16W PHOI 04-I 6 Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 16 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Prqqn in Thousands of ARC-182 Airborne Radios

UN1115

Abstract: UN1215 XP4315
Contextual Info: Composite Transistors XP4315 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● +0.05 0.12 –0.02 0 to 0.1 • Basic Part Number of Element 0.7±0.1 0.9±0.1

BFP620F

Abstract: TRANSISTOR Bf 522 marking R2s transistor bf 425 TRANSISTOR MARKING 707 transistor marking R2s BFP620F AC
Contextual Info: BFP620F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 • Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain TSFP-4

AVF300

Abstract: ASI10572
Contextual Info: AVF300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI AVF300 is a high power Class C transistor, Designed for IFF/DME/TACAN Applications in 960-1215 MHz. A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B ØD C E F FEATURES: G • Internal Input/Output Matching Networks

2N3055

Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
Contextual Info: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4

MCH185A3R9DK

Abstract: SZM-3166Z SZM3166Z tRANSISTOR 2.7 3.1 3.5 GHZ cw 3166Z
Contextual Info: SZM-3166Z SZM-3166Z 3.3 GHz to 3.6 GHz 2W Power Amplifier 3.3 GHz to 3.6 GHz 2W POWER AMPLIFIER Package: QFN, 6 mm x 6 mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

GMBTA14

Abstract: GMBTA64
Contextual Info: G M B TA 6 4 1/2 PNP SILICON TRANSISTOR Description The GMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA. Features High D.C. Current Gain For Complementary with NPN Type GMBTA14 Package Dimensions REF.

transistor marking T1k ghz

Abstract: NESG3031M05-A NESG3031M05 3 w RF POWER TRANSISTOR NPN 5.8 ghz NESG3031M05-T1-A
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz

Contextual Info: MT6C03AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6C03AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6

FMBS549

Abstract: pnp low saturation
Contextual Info: FMBS549 tm PNP Low Saturation Transistor Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. • Sourced from process PB. NC C1 E B C pin #1 C SuperSOTTM-6 single Mark: .S1 Absolute Maximum Ratings *

pin details of str f6654

Abstract: f6656 f6654 STR-S5707 STR-S5707 applications STR F6656 STR-S5707 STR-S5708 GK-002-1A F6653 Quasi-resonant flyback transformer
Contextual Info: Data Sheet 28114A STR-S5707 AND STR-S5708 OFF-LINE SWITCHING REGULATORS – WITH BIPOLAR SWITCHING TRANSISTOR COLLECTOR 1 COMMON 2 BASE 3 SINK 4 OVER-CURRENT PROTECTION 5 INHIBIT 6 32 V SENSE 7 DRIVE 8 V IN 9 The STR-S5707 and STR-S5708 are specifically designed to meet

PT 4962

Contextual Info: Ordering n u m b e r:EN4 6 5 2 FC151 No.4652 PNP Epitaxial P lanar Silicon Composite Transistor SAIIÊYO High-Frequency Amp,Current Mirror Circuit Applications I F eatu re s • Composite type with 2 transistors contained in the CP package currently in use, im proving the

RN1961

Abstract: RN1966 RN2961 RN2962 RN2963 RN2964 RN2965 RN2966
Contextual Info: RN2961~RN2966 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2961,RN2962,RN2963,RN2964,RN2965,RN2966 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including two devices in US6 (ultra super mini type with 6 leads)

RN4906

Contextual Info: RN4906 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) RN4906 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Includeing two devices in US6 (ultra super mini type with 6 leads)

ic 22721

Abstract: I 508V transistor 70V 15A darlington 2SC4006 2272A 2272ai
Contextual Info: Ordering num ber:EN 2272A I SAÊÊYO i No.2272A _ 2 S C 0 0 6 NPN Planar Type Silicon Darlington Transistor D r i v e r Ap p l i c a t i o n s Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers

81G9

Abstract: 2044B 2SD1806
Contextual Info: Ordering number: EN 2 1 16B 2 S D 1 8 0 6 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications . Relay control, motor control, switching Features . Low saturation voltage . On-chip diode between collector and emitter . S m a l l and s l i m p a c k a g e p e r m i t t i n g 2 S D 18 0 6 - a p p l i e d sets to be m a d e m o r e

TLP181

Abstract: opto TLP181 tlp521 SMD 6 pin TRANSISTOR SMD CODE 1A TLP521-1A tlp181 opto TLP181-GB TLP521 3750VRMS TLP521-2A
Contextual Info: OPTOELECTRONICS PHOTO COUPLERS OPTO-ISOLATORS SMD DIL TRANSISTOR OUTPUT DIL PACKAGE Manf. Part No. & Order Code CNY17-2 CNY17-3 4N25 4N26 4N35 4N36 PIN OUT A Manufacturer Channels Vishay-Telefunken 1 ch. Toshiba 1 ch. 1 6 2 5 3 4 min. C.T.R. typ. 63% 100%

AYN TI W

Abstract: iGSS 100nA Vgs 0v
Contextual Info: TOSHIBA -CDÏSCRETE/OPTO}- T ì D E 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR I TCHVESD 99D 16735 D TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 7 3 TECHNICAL DATA SILICON N CHANNEL MOS TYPE ff-MOSI) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

2SB1516F5

Abstract: rohm 574 2SB1516 2SB1516(F5)
Contextual Info: h "7 > y T £ /Transistors 2 S B 1 5 1 6 2S B 1516F5 F 5 Epitaxial ixial Planar PNP Silicon Transistor fàWÏ tfàty%/L- 0\N Freq. Power Amp. • W fi'+üH I/D im ensions Unit : mm) V > > J V " , V 'J |T 1) VcE(sat) VcE(sat)——0-3V (lc /lB = -0.4A /-0 .0 4A )

Contextual Info: SKM 180A020 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions 0 1 +* 2    ,    Values Units +"" !5" !$*# *7" 9 +" ; 7" ''' < !*" !+*# 3   3 2 +*"" 3 = 1 ;  !5"  =6 1 ; 6 *7"  3- -6 38 0: 0# 3 0 1 +* 5"# 2

PA2727UT1A

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2727UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A) 5 +0.1 6 ±0.2 QGD = 3.5 nC TYP. (VDD = 15 V, ID = 16 A) • Thin type surface mount package with heat spreader (8-pin HVSON)