TRANSISTOR 6 B Search Results

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain NPN wideband transistor in a plastic

LB1273R

Contextual Info: Ordering number: EN 667B Monolithic Digital 1C I L B 1 2 73R N 0 .6 6 7 B 6-Unit, Darlington Transistor Array The circuit construction of this IC is a Darlington transistor array with six units, most suitable for printer hammer drive, lamp, and relay drive.

Contextual Info: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C i Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation VcBO -6 0 -40 -5 -6 0 0

Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-6 0.20 (0.008) M VIEW C C P6.049 CL 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE e b 6 INCHES 5 4 CL CL E 1 2 8 PIN 1 INDEX AREA A E1 3 e1 MILLIMETERS SYMBOL MIN MAX

marking Y1 transistor

Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

marking Y1 transistor

Abstract: fairchild pin 1 marking
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

a 4x transistor

Abstract: MO203AB SC70-6 MO-203-AB
Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-6 0.20 (0.008) M P6.049 VIEW C C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL INCHES e b SYMBOL 6 5 4 CL CL E1 E 1 2 3 e1 C D CL A A2 SEATING PLANE A1 -C- WITH

MO203AB

Abstract: SC70-6 MO-203-AB
Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-6 0.20 (0.008) M P6.049A VIEW C C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL INCHES e b SYMBOL 6 5 4 CL CL E1 E 1 2 3 e1 C D CL SEATING PLANE A1 -C- WITH b PLATING

0118 transistor

Abstract: MO178AB MO178 MO-178-AB P6.064 Package L2 SOT23-6 MO-178AB
Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SOT23-6 0.20 (0.008) M P6.064 VIEW C C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL INCHES e b SYMBOL 6 5 4 CL CL E1 E 1 2 3 e1 C D CL A A2 SEATING PLANE A1 -C- WITH

2SC5600

Abstract: 2SC5603 marking NT
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA843TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 6-pin lead-less minimold package • 2 different built-in transistors (2SC5603, 2SC5600)

BD 266 S

Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6
Contextual Info: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 | BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing

transistor on 4409

Abstract: transistor on 4408 2NS399 2N5399 TA968 A7016 2n 4409
Contextual Info: TYPE 2N5399 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L-S 6 8 1 0 6 6 6 . S E P T E M B E R 1966 RADIATION-TOLERANT TRANSISTOR FOR LOW-POWER GENERAL PURPOSE VHF-UHF AMPLIFIER AND SATURATED-SWITCHING APPLICATIONS • Guaranteed I cbo/ hfE and V«,«., after lx lO 15 Fast Neutrons/cm2

2N1617

Contextual Info: 2N1617 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR  1 0 .1 6 (0 .4 0 0 ) 1 7 .2 7 (0 .6 8 0 ) 1 9 .0 5 (0 .7 5 0 ) m in . ! • Bipolar Power Transistor 1 5 .4 2 (0 .6 0 7 ) m a x . • TO–61 Hermetic Package 7 .6 2 (0 .3 0 0 ) 8 .8 9

2N1616

Abstract: 60V transistor npn 2a
Contextual Info: 2N1616 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR  1 0 .1 6 (0 .4 0 0 ) 1 7 .2 7 (0 .6 8 0 ) 1 9 .0 5 (0 .7 5 0 ) m in . ! • Bipolar Power Transistor 1 5 .4 2 (0 .6 0 7 ) m a x . • TO–61 Hermetic Package 7 .6 2 (0 .3 0 0 ) 8 .8 9

marking 2w

Abstract: 2SC5600 2SC5737
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5737, 2SC5600)

Contextual Info: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

M54539P

Abstract: M54539
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54539P 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54539P six-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

NESG2046M33

Abstract: NESG2107M33
Contextual Info: PRELIMINARY DATA SHEET NPN SiGe RF TWIN TRANSISTOR µPA880TS NPN SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor

2N4423

Contextual Info: TYPE 2N4423 P-N-P SILICON TRANSISTOR B U L L E T I N N O . D L -S 6 8 9 1 2 4 , A U G U S T 1 9 6 6 - R E V I S E D M A Y 1 9 6 6 SILECTf TRANSISTOR FOR HIGH-SPEED SWITCHING APPLICATIONS • Electrically Similar to the 2N2894 • Rugged, One-Piece Construction with Standard TO-18 100-mil Pin Circle

Contextual Info: ObE D N AMER PHILIPS/DISCRETE 8 6 0 1 1 9 3 6 D • bb53T31 0014174 4 ■ r - BLY91A I V i. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 28 V . The transistor is resistance stabilized and

1417 transistor

Abstract: max 1417 1417-6A
Contextual Info: 1417-6A 6 Watts, 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION The 1417-6A is an internally matched, COMMON BASE transistor capable of providing 6 watts of CW RF Output power across the 1400-1700 MHz band. This transistor is specifically designed for telemetry and telecommunications

Contextual Info: e PTB 20216 6 Watts, 1.8–2.0 GHz RF Power Transistor Description The 20216 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1.80 to 2.00 GHz frequency band. Rated at 6 watts minimum output power, it may be used for

Contextual Info: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.