TRANSISTOR 6 B Search Results

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain NPN wideband transistor in a plastic

TRANSISTOR ML6

Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain

LB1273R

Contextual Info: Ordering number: EN 667B Monolithic Digital 1C I L B 1 2 73R N 0 .6 6 7 B 6-Unit, Darlington Transistor Array The circuit construction of this IC is a Darlington transistor array with six units, most suitable for printer hammer drive, lamp, and relay drive.

Contextual Info: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C i Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation VcBO -6 0 -40 -5 -6 0 0

Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-6 0.20 (0.008) M VIEW C C P6.049 CL 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE e b 6 INCHES 5 4 CL CL E 1 2 8 PIN 1 INDEX AREA A E1 3 e1 MILLIMETERS SYMBOL MIN MAX

MO203AB

Abstract: 049B TRANSISTOR Outlines MO-203-AB SC70-6 E1-CD TRANSISTOR A1
Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-6 0.20 (0.008) M P6.049B VIEW C C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL MILLIMETERS e b SYMBOL 6 5 4 CL CL E1 E 1 2 3 e1 C D CL A1 SEATING PLANE -C- 0.80

IR2405

Contextual Info: SHARP E L E K / M ELEC i SE o | D IV aiaa?^ aoai^a . ? ! IR2405 6-Unit 400mA Darlington Transistor Array T ' 5 2 - / 3 - * 7 y— IR2405 • 6-Unit 400mA Darlington Transistor Array Pin Connections Description The IR2405 is a 6-circuit driver. This IC can be

marking Y1 transistor

Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

marking Y1 transistor

Abstract: fairchild pin 1 marking
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

a 4x transistor

Abstract: MO203AB SC70-6 MO-203-AB
Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-6 0.20 (0.008) M P6.049 VIEW C C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL INCHES e b SYMBOL 6 5 4 CL CL E1 E 1 2 3 e1 C D CL A A2 SEATING PLANE A1 -C- WITH

MO203AB

Abstract: SC70-6 MO-203-AB
Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-6 0.20 (0.008) M P6.049A VIEW C C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL INCHES e b SYMBOL 6 5 4 CL CL E1 E 1 2 3 e1 C D CL SEATING PLANE A1 -C- WITH b PLATING

transistor Y2

Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6
Contextual Info: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful

0118 transistor

Abstract: MO178AB MO178 MO-178-AB P6.064 Package L2 SOT23-6 MO-178AB
Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SOT23-6 0.20 (0.008) M P6.064 VIEW C C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL INCHES e b SYMBOL 6 5 4 CL CL E1 E 1 2 3 e1 C D CL A A2 SEATING PLANE A1 -C- WITH

2SC5600

Abstract: 2SC5603 marking NT
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA843TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 6-pin lead-less minimold package • 2 different built-in transistors (2SC5603, 2SC5600)

smd code HF transistor

Abstract: BLF3G21-6
Contextual Info: BLF3G21-6 UHF power LDMOS transistor Rev. 01 — 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance

transistor on 4409

Abstract: transistor on 4408 2NS399 2N5399 TA968 A7016 2n 4409
Contextual Info: TYPE 2N5399 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L-S 6 8 1 0 6 6 6 . S E P T E M B E R 1966 RADIATION-TOLERANT TRANSISTOR FOR LOW-POWER GENERAL PURPOSE VHF-UHF AMPLIFIER AND SATURATED-SWITCHING APPLICATIONS • Guaranteed I cbo/ hfE and V«,«., after lx lO 15 Fast Neutrons/cm2

2N1617

Contextual Info: 2N1617 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR  1 0 .1 6 (0 .4 0 0 ) 1 7 .2 7 (0 .6 8 0 ) 1 9 .0 5 (0 .7 5 0 ) m in . ! • Bipolar Power Transistor 1 5 .4 2 (0 .6 0 7 ) m a x . • TO–61 Hermetic Package 7 .6 2 (0 .3 0 0 ) 8 .8 9

2N1616

Abstract: 60V transistor npn 2a
Contextual Info: 2N1616 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR  1 0 .1 6 (0 .4 0 0 ) 1 7 .2 7 (0 .6 8 0 ) 1 9 .0 5 (0 .7 5 0 ) m in . ! • Bipolar Power Transistor 1 5 .4 2 (0 .6 0 7 ) m a x . • TO–61 Hermetic Package 7 .6 2 (0 .3 0 0 ) 8 .8 9

TRANSISTOR D 570

Abstract: BF 145 transistor transistor bf
Contextual Info: 2SC D • Ö23SLQS 0GQ4S23 Q H S I E G r - 3 t-rs ~ BF 568 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 5 6 8 is a PNP silicon planar transistor with passivated surface in TO 2 3 6 plastic package 2 3 A 3 DIN 4.1869 . The transistor is particularly suitable for use in low-noise gain-controlled

marking 2w

Abstract: 2SC5600 2SC5737
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5737, 2SC5600)

Contextual Info: DF N1 10B -6 BC857QAS 45 V, 100 mA PNP/PNP general-purpose transistor 25 July 2014 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847QAS.

Contextual Info: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

M54539P

Abstract: M54539
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54539P 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54539P six-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.