TRANSISTOR 557 B Search Results

TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC559

Abstract: transistor BC 458 BC 458 transistor BC560 ic 558 TRANSISTOR bc560 BC546 BC556 BC 557 PNP TRANSISTOR
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

TRANSISTOR C 557 B

Abstract: bc560 transistor BC 458 Transistor B C 458 BC559 PSpice transistor BC559 transistor bc558 features BC558 PNP transistor download datasheet
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

of transistor bc558

Abstract: bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC559CTA

Abstract: bc560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor BC 458

Abstract: BC 458 transistor transistor bc557 TRANSISTOR BC 560 ic 558 BC558 PNP transistor information of BC558 transistor bc 558 pnp BC546 BC556
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor BC 458

Abstract: transistor BC 557 BC 458 transistor
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC557

Abstract: transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor BC 458

Abstract: BC 458 transistor bc546 fairchild BC546 BC556 BC559 BC560 BC558 PNP transistor
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

2SB1557

Abstract: 2SD2386
Contextual Info: TOSHIBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 557 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Ta = 25°C)

marking 557 SOT143

Contextual Info: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor

BLV38

Abstract: 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179
Contextual Info: PHILIPS INTERNATIONAL bS E D • 711GÔ5ti DDt.2R2R Jl 557 ■ BLV38 VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use In linear V H F television transmitters vision o r sound amplifiers .

2SB1557

Abstract: 2SD2386
Contextual Info: TO SH IBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2386 3.2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SB1557 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2386 ¿ 3 .2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)

2SB1557

Abstract: 2SD2386
Contextual Info: TO SH IBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 03.2 ±0.2 1 5.9 M A X . High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Tc = 25°C)

Contextual Info: UTC BC556/557/558 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL Collector-base voltage

TRANSISTOR C 557 B

Abstract: operation of BC557 TRANSISTOR TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR transistor 557 b free BC557 transistor bc558 features of pnp transistor BC557 transistor c 557 transistor c 558
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 Lead-free: BC556L/BC557L/BC558L Halogen-free:BC556G/BC557G/BC558G „ ORDERING INFORMATION Normal BC556-x-T92-B

TOSHIBA Transistor Silicon PNP Epitaxial Type

Abstract: 2SB1557 2SD2386
Contextual Info: 2SB1557 TOSHIBA TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE D ARLING TO N POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 3.2 ± 0 .2 15.9M AX High Breakdown Voltage : VcEO = —140V (Min.) Complementary to 2SD2386 M A X IM U M RATINGS (Ta = 25°C)

APPLICATION OF BC548 transistor

Abstract: BC547 BC548 BC548 B 001 BC548 pnp transistor bc547 pnp transistor bc547 features pnp bc547 transistor BC546 for bc548 npn transistor
Contextual Info: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ᴌHigh Voltage : BC546 VCEO=65V. ᴌFor Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25ᴱ

BC547 transistor kec

Abstract: APPLICATION OF BC548 transistor BC547 BC547 transistor BC548 BC548 pnp transistor BC547 w 2 d bc548 pnp bc547 application note of transistor BC548
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC546/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC546 V C = 6 5 V . • For Complementary With PNP Type BC556/557/558. eo MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

TRANSISTOR C 557 B

Abstract: transistor c 557 B 557 PNP TRANSISTOR transistor 557 b Transistor Bc556 bc556 transistor transistor c 558 ic 558 of pnp transistor BC557 PNP BC558
Contextual Info: UTC BC556/557/558 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL Collector-base voltage

bc5476

Abstract: APPLICATION OF BC548 transistor BC547 bc547 pnp BC548 pnp bc547 transistor BC548 pnp transistor BC548 transistor pnp of transistor BC548 transistor bc547 features
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC546/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC546 V Ceo=65V. • For Complementary With PNP Type BC556/557/558. MAXIMUM RATINGS Ta=25°C

2N6796U

Abstract: IRFE130 JANTXV2N6796U diode aa 90 JANTX2N6796U
Contextual Info: Provisional Data Sheet No. PD - 9.1666A IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] N-CHANNEL Ω , HEXFET 100Volt, 0.18Ω Product Summary The leadless chip carrier LCC package represents

APPLICATION OF BC548 transistor

Abstract: bc547 pnp BC547 BC548 pnp transistor pnp bc547 transistor bc548 pnp BC548 BC548 TRANSISTOR BC546 for bc548 npn transistor
Contextual Info: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ・High Voltage : BC546 VCEO=65V. ・For Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25℃