TRANSISTOR 538 Search Results

nec 2741

Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.

NEC JAPAN 237 521 02

Abstract: transistor zo 607 2SC5004
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

Contextual Info: CMBT6517 HIGH-VOLTAGE TRANSISTOR N -P -N transistor M arking CMBT6517 = 1Z PACKAGE OUTLIN E D ETAILS ALL D IM EN SION S IN m m 3.0 2.8 0.14 0.09 0.48 <538 Pin configuration 1 § 3 0.70 0.50 “1 1.4 1.2 2.6 2.4 R0.1 .004 1 = BASE 2 = EMITTER 3 = COLLECTOR

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

Contextual Info: CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N -P-N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage Collector current DC

NEC JAPAN 237 521 02

Abstract: 3563 1231 2SC5014 2SC5015 2SC5015-T1 2SC5015-T2 t83 230 02 TD-7938
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. 2.1 ± 0.2 PART

marking R24

Abstract: 2sc4226 nec 2741 MARKING 702 6pin ic
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 ELEMENTS MINI MOLD The µPA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS (Unit: mm)

3563 1231

Abstract: transistor NEC B 617 nec d 1590
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain

Contextual Info: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

mm4018

Contextual Info: Order this document by MM4018/D M M é lk aWmà tl%Æ!l9émÈË Æ m W m % Ê 0f * The RF Line PIMP SILICON RF POWER TRANSISTOR PIMP SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier or oscillator appli­ cations in military and industrial equipment. Suitable for use as

Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 538 Qualified Level Devices 2N6676 2N6678 2N6691 JAN JANTX JANTXV 2N6693 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage

Contextual Info: Preliminary Product Description SGA-5389 Stanford Microdevices’ SGA-5389 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

2N6678

Abstract: 2N6676 2N6693 2N6691
Contextual Info: TECHNICAL DATA 2N6676 JAN, JTX, JTXV 2N6678 JAN, JTX, JTXV 2N6691 JAN, JTX, JTXV 2N6693 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/538 NPN POWER SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

CJF6388

Abstract: CJF6668
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose Darlington Amplifier and Switching Applications

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR POWER TRANSISTOR CFD1499 TO-220FP Fully Isolated Plastic Package Complementary CFB1063 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

drum sound ic

Abstract: ht3012 drum ic bass drum sound ic snare drum sound ic rhythm snare drum ic All Type Of IC Pin Diagram Manual snare drum sound generator
Contextual Info: HT3012 Rhythm Generator Features • • • • • • • Operating voltage: 2.4V~5.0V Direct drive output transistor Low standby current Minimal external components Demo function Key function: retriggerable • 2 output pins for: – OUT1B=LED flash 4Hz output

BRA144ECM

Abstract: BRC114ECM BRC123ECM BRC124ECM BRC143ECM BRC144ECM DSA003640
Contextual Info: BRC144ECM Series NPN Built-in Resistor Transistor CMPAK Series Inverter, Driver, Switching ADE-208-1445B Z Rev.2 Sep. 2001 Features • Built–in Resistor Type • Simplifies Circuit Design • Reduces Board Space • Complementary pair with BRA144ECM series

BRA114EMP

Abstract: BRA123EMP BRA124EMP BRA143EMP BRA144EMP BRC144EMP DSA003640 CG2-22-2
Contextual Info: BRA144EMP Series PNP Built-in Resistor Transistor MPAK Series Inverter, Driver, Switching ADE-208-1442B Z Rev.2 Sep. 2001 Features • Built–in Resistor Type • Simplifies Circuit Design • Reduces Board Space • Complementary pair with BRC144EMP series

BRA144EMP

Abstract: BRC114EMP BRC123EMP BRC124EMP BRC143EMP BRC144EMP brc114 DSA003640
Contextual Info: BRC144EMP Series NPN Built-in Resistor Transistor MPAK Series Inverter, Driver, Switching ADE-208-1443B Z Rev.2 Sep. 2001 Features • Built–in Resistor Type • Simplifies Circuit Design • Reduces Board Space • Complementary pair with BRA144EMP series

CFD1025

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLANAR POWER DARLINGTON TRANSISTOR CFD1025 TO-220FP Fully Isolated Plastic Package B CE Power Darlington for use in Linear Switching Applications ABSOLUTE MAXIMUM RATINGS

TRANSISTOR 13007a

Abstract: 13007a 13007B 13007E 13007C 13007* transistor CDL13007 13007A equivalent TRANSISTOR 13007b 13007C Transistor
Contextual Info: CDL13007 TO-220 PLASTIC PACKAGE NPN PLASTIC POWER TRANSISTOR Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation upto Ta=25ºC

NEC 2705 L 107

Abstract: IC LA 4127 NEC Ga FET marking L NEC 2705 NEC 3552 L to Ku BAND LOW NOISE AMPLIFIER low noise FET NEC U NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The N E32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

The Japanese Transistor Manual 1981

Abstract: japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent