TRANSISTOR 500V 0.5A Search Results

TRANSISTOR 500V 0.5A Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR 500V 0.5A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE2550 Abstract: NPN DARLINGTON 10A 500V 50W 400V 10A NPN transistor Contextual Info: NTE2550 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V	Original	NTE2550 NTE2550 NPN DARLINGTON 10A 500V 50W 400V 10A NPN transistor	PDF
TO220 HEATSINK DATASHEET Abstract: 2SC3832 Contextual Info: 2SC3832 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose •Absolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) 2SC3832 Unit ICBO VCB=500V	Original	2SC3832 MT-25 100max 400min 10typ 50typ Pulse14) TO220 HEATSINK DATASHEET 2SC3832	PDF
Contextual Info: 2SC3832 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose •Absolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) (Ta=25°C) Unit ICBO VCB=500V	Original	2SC3832 Pulse14) 100max 400min 10typ 50typ MT-25	PDF
vbe 10v, vce 500v NPN Transistor Abstract: vce 500v NPN Transistor 2SC2658 2sc265 IC Designs npn transistor vceo 800v Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2658 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications.	Original	2SC2658 vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor 2SC2658 2sc265 IC Designs npn transistor vceo 800v	PDF
Contextual Info: TSC10 Preliminary High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 500V BVCBO 980V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram High Voltage High Speed Switching Structure	Original	TSC10 TSC10CT	PDF
1.5A NPN power transistor TO-92 Abstract: vbe 10v, vce 500v NPN Transistor Contextual Info: TSC10 Preliminary High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 500V BVCBO 980V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram ● High Voltage ● High Speed Switching Structure	Original	TSC10 TSC10CT 1.5A NPN power transistor TO-92 vbe 10v, vce 500v NPN Transistor	PDF
2SC5130 Abstract: FM20 Contextual Info: 2SC5130 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Ratings Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2	Original	2SC5130 100max 10max 400min Pulse10) 20typ 30typ O220F) 2SC5130 FM20	PDF
Contextual Info: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 400 V VEBO 10 V 5(Pulse10) A IC Conditions Ratings Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30	Original	2SC4073 Pulse10) O220F) 100max 400min 10typ 30typ	PDF
2SC5130 Abstract: FM20 Contextual Info: 2SC5130 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 2SC5130 Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2	Original	2SC5130 100max 10max 400min Pulse10) 20typ 30typ O220F) 2SC5130 FM20	PDF
2SC4073 Abstract: FM20 SE-05 Contextual Info: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor V ICBO VCEO 400 V VEBO 10 V 5(Pulse10) A IC Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30 IB 2	Original	2SC4073 Pulse10) 100max 400min 10typ 30typ O220F) 2SC4073 FM20 SE-05	PDF
ATV-18 Abstract: 2SC4140 Contextual Info: 2SC4140 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO V 18(Pulse36) A hFE IC=25mA 400min VCE=4V, IC=10A 10 to 30 6 A VCE(sat) IC=10A, IB=2A	Original	2SC4140 MT-100 100max Pulse36) 400min 10typ 165typ ATV-18 2SC4140	PDF
2SC3991 Abstract: ITR06157 ITR06158 ITR06159 ITR06160 ic24a Contextual Info: Ordering number:ENN2836 NPN Triple Diffused Planar Silicon Transistor 2SC3991 500V/50A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf=0.1 s typ . · Wide ASO. · Adoption of MBIT process.	Original	ENN2836 2SC3991 00V/50A 2048B 2SC3991] 2SC3991 ITR06157 ITR06158 ITR06159 ITR06160 ic24a	PDF
2SC4140 Abstract: ATV-18 vbe 10v, vce 500v NPN Transistor 110MP Contextual Info: 2SC4140 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 18(Pulse36) A hFE VCE=4V, IC=10A 10 to 30 6 A VCE(sat) IC=10A, IB=2A	Original	2SC4140 MT-100 100max 400min Pulse36) 10typ 165typ 2SC4140 ATV-18 vbe 10v, vce 500v NPN Transistor 110MP	PDF
2SC3991 Abstract: ITR06157 ITR06158 ITR06159 ITR06160 ic26a Contextual Info: Ordering number:ENN2836 NPN Triple Diffused Planar Silicon Transistor 2SC3991 500V/50A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf=0.1µs typ . · Wide ASO. · Adoption of MBIT process.	Original	ENN2836 2SC3991 00V/50A 2048B 2SC3991] 2SC3991 ITR06157 ITR06158 ITR06159 ITR06160 ic26a	PDF

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPx50R3K0CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPD50R3K0CE,IPU50R3K0CE 1Description DPAK	Original	IPx50R3K0CE IPD50R3K0CE, IPU50R3K0CE	PDF
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPx50R3K0CE DataSheet Rev.2.0 Final Industrial&Multimarket 500VCoolMOS™CEPowerTransistor IPD50R3K0CE,IPU50R3K0CE 1Description DPAK	Original	IPx50R3K0CE IPD50R3K0CE, IPU50R3K0CE	PDF
IRF9210 Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF	OCR Scan	2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1	PDF
500W TRANSISTOR AUDIO AMPLIFIER Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,	Original	Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet	PDF
TO-205AD Abstract: TO-39 CASE 2N5010 Contextual Info: 2N5010 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. General purpose power transistor for	Original	2N5010 O-205AD) TO-205AD TO-39 CASE 2N5010	PDF
68w Transistor smd Abstract: bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H Contextual Info: Willow Technologies Relay Selector 2002 Signal / Telecommunications Electromechanical HG4100 HG4516 HG4507 HG4078B SGR46G 1C/O 2C/O 1C/O 1C/O Switching Current 1A 2A 2A 5A Switching Voltage 125VAC / 60VDC 125VAC / 150VDC Breaking Capacity 62.5VA / 30W 50VA / 30W	Original	HG4100 HG4516 HG4507 HG4078B SGR46G 125VAC 60VDC 150VDC 24VDC 68w Transistor smd bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H	PDF
Contextual Info: 1 of 7 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 ISM200, 300, 400, 500: Hybrid Optocouplers Circuit and Package Description Absolute Maximum Ratings	Original	ISM200, ISM400 ISM200 ISM300 ISM400 ISM500 ISM20I 100mA 100ohm	PDF
Contextual Info: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and	Original	BUL54A-TO5 O-205AA)	PDF
transistor VCEO 1000V Abstract: NPN Transistor VCEO 1000V BUL54A-TO5 LE17 Contextual Info: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and	Original	BUL54A-TO5 O-205AA) transistor VCEO 1000V NPN Transistor VCEO 1000V BUL54A-TO5 LE17	PDF
NPN Transistor 15A 400V to3 Abstract: 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 SDT13301-SDTI3305 transistor 500v 0.5a transistor npn 10mhz 500v S65C Contextual Info: ^/òlitron [^ ©tSDCT ©ÄTTÄIL Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available	OCR Scan	305mm) JAN2N6546, 2N6547. 2N6561, 2N6563, SDT13301-SDTI3305 NPN Transistor 15A 400V to3 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 transistor 500v 0.5a transistor npn 10mhz 500v S65C	PDF

TRANSISTOR 500V 0.5A Search Results

TRANSISTOR 500V 0.5A Result Highlights (5)

TRANSISTOR 500V 0.5A Datasheets Context Search

NTE2550

TO220 HEATSINK DATASHEET

vbe 10v, vce 500v NPN Transistor

1.5A NPN power transistor TO-92

2SC5130

2SC5130

2SC4073

ATV-18

2SC3991

2SC4140

2SC3991

IRF9210

500W TRANSISTOR AUDIO AMPLIFIER

TO-205AD

68w Transistor smd

transistor VCEO 1000V

NPN Transistor 15A 400V to3