TRANSISTOR 447 448 Search Results

d 5072 transistor

Abstract: transistor mc140 817 OPTO-coupler 817 OPTO microprocessor 8255 application seven segment opto 817 MC140 Datasheet IC 8155 8282/8283 eprom 8243
Contextual Info: IC Testers 70 71 72 73 75 76 77 78 81 82 85 86 89 93 94 95 96 97 98 99 101 102 103 106 107 109 110 147 160 161 162 163 174 175 192 193 194 195 VPL-UICTS Universal IC Tester CMOS ICs MC140 : MC140 FEATURES q Tests most of the 6 to 40 pin ICs in DIP package. The list

cadstar pcb

Abstract: cadstar shape synario cadstar ALLEGRO PART NUMBER INDEX
Contextual Info: Synario ECS and Board Entry Index A Allegro Add symbol attributes . 3-38 Adding a netlister to a menu . 3-28, 3-41, 3-42 Allegro ECO Changes . 3-49

Contextual Info: bb53^31 0023645 Philips Semiconductors DO1! H A P X Product specification N-channel enhancement mode vertical D-MOS transistor BSP128 N APIER PHILIPS/DISCRETE b?E T> QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

Contextual Info: KSR2208 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R e s is to r B uilt In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R ,= 4 7 K íi, Rj = 22KÍ¡) TO-92S • C om p le m en t to KSR1208

INVERTER DESIGN PDF DATASHEET

Abstract: resistor resistors types of resistors DTD113EK DTD113ES transistor 447 448
Contextual Info: Transistors Digital transistors built-in resistors DTD113EK / DTD113ES FFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the

transistor 513

Abstract: 2sc for muting
Contextual Info: Contents Contents Page Introduction 9 Physical configuration of leaded transistors 10 Quality assurance and reliability 11 Quality assurance system 12 Measures for quality assurance 12 Overview of manufacturing processes 13 Glossary of letters and symbols used in this data book

1N3220

Contextual Info: ZE TE X IN C T5 D 95D 0 6 0 5 1 8-bit ¡xP compatible A-D converter ZN447 ZN449 D ZN448 FEATURES DESCRIPTION • Easy Interfacing to microprocessor, or operates as a 'stand-alone' converter • Fast: 9/xs conversion tim e guaranteed • Choice o f linearity: 0.3LS B - Z N 4 4 7 ,

BSP12

Abstract: BSP128 transistor 447 448
Contextual Info: b b S B T B l 00 23 0 4 5 GOT Philips Sem iconductors IAPX Product specification N-channel enhancement mode vertical D-MOS transistor BSP128 N AHER PHILIPS/DISCRETE FEATURES b?E D Q UICK REFERENCE DATA • Direct interface to C-MO S, TTL, etc. • High-speed switching

transistor 377

Abstract: BD376 BD375 bd379
Contextual Info: BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS • Complement to BD376, BD378 and BD380 respectively A B S O LU T E MAXIMUM RATINGS Symbol Characteristic Collector Base Voltage : BD375 Rating V V V ceo 100 45

pin configuration of ic TL084

Abstract: 8085 microprocessor realtime application uln2004 application note LM324 battery tester LM714 blueflash LM144 LM358 LM311 PIN CONFIGURATION ic moc3021 LM714 Application Note
Contextual Info: IC Testers VPL-AICT LH2211 LH2311 LM2901 LM3302 HA17339 HA17393 HA17901 HA17903 Analog IC Tester Transistor Arrays ULN2001 ULN2002 ULN2003 ULN2004 ULN2005 ULN2064 ULN2065 ULN2066 ULN2067 ULN2068 ULN2069 ULN2074 ULN2075 TD62501 TD62502 TD62503 TD62504 TD62505

Contextual Info: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD375, BD377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit -5 0 -7 5 - 100 -4 5 -6 0 -8 0 V V l C ollector Base Voltage

sgsp230

Contextual Info: n Z J SGS THOM SON SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP230 VDss 450 V ^D S on 3 Í2 Id 2.5 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - 450V FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT > 100KHz

Contextual Info: rz7 SGS-THOMSON * JÆ . M ffi iLi gïïM O (êS SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS(on SGSP230 450 V 3 n Id 2.5 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - 450V FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION

Contextual Info: FMBA14 FMBA14 C2 E1 C1 pin #1 B1 B2 E2 SuperSOTä-6 Mark: .1N Dot denotes pin #1 NPN Multi-Chip Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings*

Contextual Info: N AMER PHILIPS/DISCRETE bSE T> m bbS3T31 0037637 bTl BRY56 APX PROGRAMMABLE UNIJUNCTION TRANSISTOR Silicon planar PNPN trigger device in a plastic TO-92 envelope, intended fo r use in switching appli­ cations such as motor control, oscillators, relay replacement, timers, pulse shaper etc.

Contextual Info: N AMER PHIL IPS /DI SCRE TE bTE D m bbS3T31 DD3D7SD 711 W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

3MM LED

Abstract: IR detector transistor 551 IR LED array nj TRANSISTOR green LED 3mm low 3mm "ir led" diode led ir 3mm photo diode LED 3mm 2ma
Contextual Info: Selector Guide: 3mm IR and L E D Products DESCRIPTION DATA SHEET PAGE s 3mm IR Detector Infra Red Emitter 551-7110 4-7 3mm IR Detector Photo Transistor 551-7610 4-8 3mm IR Detector Photo Diode 551-7710 4-9 551-XX01 4-10 & 4-11 551-XX02 4-12 3mm LED CBI (DIN 41494 compatible)

Contextual Info: 3 0 e: D ¿ = 7 n 7 e! 2 ci2 3 7 Q Q 2ci c127 S C S -T H O M S O N T H T '— P ' S 0, — Vi f i T r S ^7# RjflH @ilLi gT]»lSÖÖ©i r - SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP230 V dss 450 V ^DS(on 30 *D 2.5 A • HIGH SPEED SWITCHING APPLICATIONS

transistor j380

Abstract: motorola J122 j392 transistor j122 J122 transistor j113 equivalent ic 65 MHZ rf transmitter ON SEMICONDUCTOR J122
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak

Contextual Info: 25E D N AUER PHILIPS/DISCRETE • tb53ci31 002DbbS 1 PowerMOS transistor Fast Recovery Diode FET BUK627-600A BUK627-600B BUK627-600C r - 2 7 - i i GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

BUK543

Abstract: BUK543-60A BUK543-60B TTA10
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK543-60A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: SGS-THOMSON BUV27 FAST NPN SWITCHING TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-O FF AND TURN-ON D E S C R IP T IO N High speed transistor suited for low voltage applica­ tions. High frequency and efficiency converters switching regulators m otor control.

Contextual Info: MULTI CHIP BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62M3600F 3CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M3600F is multi chip driver 1C incorporates 3 low saturation voltage discrete PNP transistors which equipped bias resistor and fly-w heeling diode. FEATURES