TRANSISTOR 431 C Search Results

sd 431 transistor

Contextual Info: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in

transistor w 431

Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
Contextual Info: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW

29Z3

Abstract: Transistor CODE FR m7am
Contextual Info: 55C D • SIEG flSBSbOS 000*431^ 1 BCY67 PNP Silicon PlanarTransistor SIEMENS AKTIENGESELLSCHAFT 04319 7^ O Z- 3 BCY 6 7 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistor is particularly provided

SLA6023 driver schematic

Abstract: UDN2983A equivalent SMA4033 ULN2068LB STA431A STA458C UDN2580A udn darlington driver ic SLA4031 T02EB0
Contextual Info: POWER & DISPLAY DRIVERS 431 THRU 458, 4310 THRU 4391, 5022 THRU 6030, AND 8001 BRIDGE AND HALF-BRIDGE TRANSISTOR ARRAYS Part Number STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA5022 SMA6010 SLA6012 SMA6014 SLA6020 SLA6022

2-7D101A

Abstract: 2SA1431
Contextual Info: TOSHIBA 2SA1431 2 S A 1 431 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain and Excellent hEE Linearity : hFE(1) = 100-320(VCe = -2 V , IC= -0.5A)

2SA143

Abstract: 2SA1431 2-7D101A
Contextual Info: 2SA1431 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 431 Unit in mm STOROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • • High DC Current Gain and Excellent hEE Linearity : hFE(l) = 100-320 (VCe = -2 V , IC= -0.5A )

transistor 431 c

Abstract: 431 transistor transistor 431 a 431 transistor transistor 431t transistor 431 N transistor N 431 a n 431 transistor 431t transistor 431 a
Contextual Info: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity

transistor w 431

Abstract: a 431 transistor transistor 431 c n 431 transistor a 103 m Transistor y 431 transistor transistor 431 N transistor 431 Transistor Arrays transistor 431 a
Contextual Info: CONTENTS [1 ] INDEX . 7 IFD FAM ILY TREE . TD/TB62 SERIES . TRANSISTOR ARRAY SELECTION GUIDE .

Transistor PJ 431

Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB
Contextual Info: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 | Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue

ZTX108B

Abstract: ZR431 431 regulator 431 sot23 h a 431 transistor ic 431 ZR431Q1 capacitor c1 220uF 108B BAS21
Contextual Info: Application Note 27 Issue 1 June 1996 ZR431 Application Note David Bradbury The ZR431 is an enhanced version of the industry standard 431. It is a three terminal shunt regulator giving excellent temperature stability and the capability of operating at currents from 50µA up

cadstar pcb

Abstract: cadstar shape synario cadstar ALLEGRO PART NUMBER INDEX
Contextual Info: Synario ECS and Board Entry Index A Allegro Add symbol attributes . 3-38 Adding a netlister to a menu . 3-28, 3-41, 3-42 Allegro ECO Changes . 3-49

Contextual Info: Philips Components Data heat status Product specification data of Issue December 1990 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • BSN204/BSN204A Direct interface to C-MOS, TTL, etc. SYMBOL VDS PARAMETER CONDITIONS

marking code AE SMD Transistor

Abstract: smd transistor 2T transistor smd code marking 431 transistor 431 smd n1f smd national marking code 8 soic 431 TRANSISTOR smd lm431 transistor SMD 2t n1f sot23
Contextual Info: LM431 Adjustable Precision Zener Shunt Regulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range of operation. It is now available in a chip sized package 4-Bump micro SMD using National’s micro SMD package technology. The output voltage may be set at any level

smd transistor 2T

Abstract: transistor smd code marking 431 transistor 431 smd transistor smd marking 431 K TRANSISTOR SMD MARKING CODE 2t transistor smd marking 431 SMD TRANSISTOR MARKING 2T smd transistor A1 sot-23 TRANSISTOR SMD MARKING CODE 2.T 431 SMD SOT-23 CODE MARKING
Contextual Info: LM431 Adjustable Precision Zener Shunt Regulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range of operation. It is now available in a chip sized package 4-Bump micro SMD using National’s micro SMD package technology. The output voltage may be set at any level

Contextual Info: bbS3T31 0033530 b88 Philips Semiconductors APX Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 N AnER PHILIPS/DISCRETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL MAX. UNIT drain-source voltage

PH0810-35

Abstract: Transistor c54 F1 J37 transistor 431 N cl 740
Contextual Info: = an AMP - company Wireless Bipolar Power Transistor, 850 - 960 MHz 35W PH081 o-35 Features Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration

Contextual Info: N AMER PHILIPS/DISCRETE 0inE D ^53*131 0D1S5A7 □ RZB12250Y r- %-*>'- s' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.

buz349

Contextual Info: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: Standard ICs 6-channel high current driver BA664 The BA664 is an 1C with a built-in clamp diode, developed for the purpose of minimizing attachments, and contains a Darlington transistor array of six circuits with input resistance. Input and output are directed in the same direction

S 170 MOSFET TRANSISTOR

Abstract: transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950
Contextual Info: CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this

ZNR 361

Abstract: znr 431 ERZE11A361 znr 10 471
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

Contextual Info: bbSBTBl 0D20bSD 7 SSE D N AUER PHILIPS/ DISCRE TE PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery

h a 431 transistor

Abstract: DARLINGTON ESM 30 diode ESM 5045D ESM5045D 431E ESM5045DV
Contextual Info: PH I L I P S INTERNATIONAL 4SE D E3 711002b 0D31237 J 7 SPHIN ESM5045D V T -3 3 ~ 2 ? SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).

ESM5045D

Contextual Info: N AMER P H IL IP S /D IS C R E T E b'lE ]> bbS3T31 0D2flb0b 053 H A P X ESM5045D V _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives,