TRANSISTOR 431 AB Search Results

transistor w 431

Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
Contextual Info: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW

SLA6023 driver schematic

Abstract: UDN2983A equivalent SMA4033 ULN2068LB STA431A STA458C UDN2580A udn darlington driver ic SLA4031 T02EB0
Contextual Info: POWER & DISPLAY DRIVERS 431 THRU 458, 4310 THRU 4391, 5022 THRU 6030, AND 8001 BRIDGE AND HALF-BRIDGE TRANSISTOR ARRAYS Part Number STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA5022 SMA6010 SLA6012 SMA6014 SLA6020 SLA6022

PH0810-35

Abstract: Transistor c54 F1 J37 transistor 431 N cl 740
Contextual Info: = an AMP - company Wireless Bipolar Power Transistor, 850 - 960 MHz 35W PH081 o-35 Features Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration

r1c diode

Abstract: Zener Diodes with small tolerances manufacturer R2C Zener r1p 11 TRANSISTOR h a 431 transistor precision shunt regulator 431 431 regulator AN58 AN59 E192
Contextual Info: A Product Line of Diodes Incorporated AN58 Designing with References - Shunt regulation Peter Abiodun A. Bode, Snr. Applications Engineer, Diodes Incorporated Introduction This application note introduces shunt regulators, sometimes called "reference diodes", "3terminal voltage references", or "adjustable voltage references". Using worked examples we

E11751

Abstract: E14471 E8471 E14431 E11271 E14201
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

transistor AS 431

Abstract: 2501 OPTO 2501 optoisolator 250v capacitor 33k 121k 1kv capacitor 33K 1kv capacitor a 431 transistor 431 transistor transistor 2A T1 2A 250V
Contextual Info: MIC4043 Micrel MIC4043 Low-Voltage Secondary-Side Shunt Regulator Final Information General Description Features The MIC4043 is a shunt regulator optimized for secondaryside regulation in low-voltage power supplies. Featuring an output stage guaranteed to swing within 400mV of ground,

Transistor PJ 431

Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB
Contextual Info: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 | Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue

BUZ41A

Contextual Info: SILICONIX INC 1ÖE » • Ô2S473S O G m b Q T Ö BUZ41A fsr Siliconix in c o r p o r a t e d N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW ~Ô~ PRODUCT SUMMARY V BR|DSS 'W 500 1.5 •d (A 4.5 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

ZTX108B

Abstract: ZR431 431 regulator 431 sot23 h a 431 transistor ic 431 ZR431Q1 capacitor c1 220uF 108B BAS21
Contextual Info: Application Note 27 Issue 1 June 1996 ZR431 Application Note David Bradbury The ZR431 is an enhanced version of the industry standard 431. It is a three terminal shunt regulator giving excellent temperature stability and the capability of operating at currents from 50µA up

TFK u 116

Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
Contextual Info: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW

thyristor CSG2001-14A04

Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

znr 471 varistor

Abstract: ZNR 471 ZNR 391 znr3 varistor znr 431 znr 270 ZNR 241 varistor SEC 471 10 znr 621 varistor znr e 471
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

S 170 MOSFET TRANSISTOR

Abstract: transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950
Contextual Info: CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this

ZNR V10471U

Abstract: znr varistor v10471u ZNR V10511U V7471U znr -v14471u V10511U V10471U V14471U V7271U V14241U
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D V • Features ■ Recommended Applications ● Large withstanding surge current capability in compact sizes ● Large “Energy Handling Capability” absorbing transient

sd 431 transistor

Abstract: h a 431 transistor
Contextual Info: TA8428K 1.5A FuLL b r id g e d r iv e r . Unit in mm TA8428K is Full Bridge Driver IC for Brush Motor Rotation Control that has current capability of up to 1.5A AVE . Thermal Shutdown and Short Current Protector are provided. . 1.5A MAX (AVE) Full Bridge Driver

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

PL 431 transistor

Contextual Info: Philips Semiconductors • bb53^31 OOS'lObM 157 M A P X Product specification UHF linear push-pull power transistor “ BLV58 N AMER PHILIPS/DISCRETE FEATURES • High power gain D "- ■ QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

Contextual Info: 7MBP150TEA060 600V / 150A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

BLW50F

Abstract: PHILIPS 4312 amplifier
Contextual Info: bSE I m 711Dfi5b 0Db35M0 43^ H P H I N BLW50F PHILIPS INTERNATIONAL H.F./V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, A B and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides

ULN2003APG china

Abstract: TPD1047F TC7600FNG ULN2003APG TPD1042 ULN2003APG IC CONNECTION NPN DARLINGTON TRANSISTOR ARRAY ULN2803APG toshiba tb6560 TB6584FNG
Contextual Info: SEMICONDUCTOR GENERAL CATALOG General-Purpose Linear ICs Operational Amplifier ICs Op Amp ICs & Comparator ICs Intelligent Power Devices (IPDs) Interface Drivers Motor Drivers Power Supply ICs 1 2009-8 SCE0004I Operational Amplifier ICs (Op Amp ICs) & Comparator ICs

NEC D 553 C

Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.

BTS 433

Abstract: fet wn 428 TRANSISTOR K 135 J 50 1S70 1S71 BTS 430 E2
Contextual Info: • ñ23Sb05 D0fllSb2 4 Tfl SIEMENS PROFET BTS 542 E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • Overload protection • Current limitation • Short-circuit protection

UI132

Abstract: 2SC4425
Contextual Info: Ordering n u m b e r:EN 2848 _ 2 S C 4 4 2 5 NPN Triple Diffused Planar Silicon Transistor Sw itching R egulator A pplications F eatures . High breakdown voltage, high reliability • Fast switching speed tf: 0.1 ps typ • WideASO • Adoption of MBIT process

NDS8435

Contextual Info: & N a t io nal Semiconductor" M ay 19 96 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.