TRANSISTOR 431 A Search Results

transistor w 431

Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
Contextual Info: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW

S 170 MOSFET TRANSISTOR

Abstract: transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950
Contextual Info: CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this

ESM5045D

Contextual Info: N AMER P H IL IP S /D IS C R E T E b'lE ]> bbS3T31 0D2flb0b 053 H A P X ESM5045D V _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives,

NE582N

Abstract: 75494 NE582
Contextual Info: NE582-N PIN CONFIGURATION DESCRIPTION The NE582 is a general interface device comprising a high current output transistor and drive circu itry in each of 6 elements. Each output transistor is individually capa­ ble o f sinking 400mA with a typical satura­

r1c diode

Abstract: Zener Diodes with small tolerances manufacturer R2C Zener r1p 11 TRANSISTOR h a 431 transistor precision shunt regulator 431 431 regulator AN58 AN59 E192
Contextual Info: A Product Line of Diodes Incorporated AN58 Designing with References - Shunt regulation Peter Abiodun A. Bode, Snr. Applications Engineer, Diodes Incorporated Introduction This application note introduces shunt regulators, sometimes called "reference diodes", "3terminal voltage references", or "adjustable voltage references". Using worked examples we

sd 431 transistor

Abstract: h a 431 transistor
Contextual Info: TA8428K 1.5A FuLL b r id g e d r iv e r . Unit in mm TA8428K is Full Bridge Driver IC for Brush Motor Rotation Control that has current capability of up to 1.5A AVE . Thermal Shutdown and Short Current Protector are provided. . 1.5A MAX (AVE) Full Bridge Driver

PL 431 transistor

Contextual Info: Philips Semiconductors • bb53^31 OOS'lObM 157 M A P X Product specification UHF linear push-pull power transistor “ BLV58 N AMER PHILIPS/DISCRETE FEATURES • High power gain D "- ■ QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

Contextual Info: flP3Sb05 o o a i s b 2 m a • ■ SIEMENS PROFET BTS 542 E2 Smart Highside Power Switch Features Product Summary • • • • • • • • Overvoltage protection Vbb AZ Operating voltage On-state resistance Load current (ISO) Vbb(on) /L(ISO) 18 m n

BLW50F

Abstract: PHILIPS 4312 amplifier
Contextual Info: bSE I m 711Dfi5b 0Db35M0 43^ H P H I N BLW50F PHILIPS INTERNATIONAL H.F./V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, A B and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides

ULN2003APG china

Abstract: TPD1047F TC7600FNG ULN2003APG TPD1042 ULN2003APG IC CONNECTION NPN DARLINGTON TRANSISTOR ARRAY ULN2803APG toshiba tb6560 TB6584FNG
Contextual Info: SEMICONDUCTOR GENERAL CATALOG General-Purpose Linear ICs Operational Amplifier ICs Op Amp ICs & Comparator ICs Intelligent Power Devices (IPDs) Interface Drivers Motor Drivers Power Supply ICs 1 2009-8 SCE0004I Operational Amplifier ICs (Op Amp ICs) & Comparator ICs

2sc 1364 transistor

Abstract: S5035 909 06 AVANTEK utc transistor 2sc 1586 2sc 1416 y
Contextual Info: AVANTEK INC B 44E D O a v a n tbk im n b b ODOflQOl 3 BAVA UTO/UTC 526. Thin-Film Cascadable Amplifier 10 to 500 MHz FEATURES APPLICATIONS • Frequency Range: 10 to 500 MHz • High Gain: 28.0 dB Typ • High Power Output:

431.K

Abstract: transistor smd marking 431 transistor smd code marking 431 transistor smd marking 431.k 431 SMD CODE MARKING 431 TRANSISTOR smd marking code 4e PIMN31 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE
Contextual Info: PIMN31 500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor RET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

AN569

Abstract: MTW20N50E
Contextual Info: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination

431.K

Abstract: transistor smd code marking 431 transistor smd marking 431 transistor smd code marking 420 transistor smd marking 431.k 431 SMD CODE MARKING TRANSISTOR SMD MARKING CODE SP PBSS4160DS PBSS5160DS SC74 marking 345
Contextual Info: PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat BISS transistor Rev. 02 — 27 June 2005 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

Contextual Info: TLP2630 GaAÄAs IRED & PHOTO-IC DEGITAL LOGIC ISOLATION. TELE-COMMUNICATION. ANALOG DATA EQUIPMENT CONTROL. MICROPROCESSOR SYSTEM INTERFACE. The TOSHIBA TLP2630 dual photocoupler consists of a pair of GaA£As light emitting diode and integrated high gain, high speed photodetector.

Contextual Info: SANYO SEMICONDUCTOR CORP 32E D 7cH 7 0 7 b GOGÖ1SO 7 CM O S LSI 2-Pole 4-Position Analog Function Sw itch 1359B The LC7817 is a 2-pole 4-position analog function switch with 2 built-in CMOS analog switches LC4066 type . A soft touch of a button enables switchover of the input signal source of an audio amplifier.

2N3055 RCA

Abstract: RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . fy to 20 M H z . . . P t to 175 W •c pm k - lc = 1 0 A Py T .V . Application = 75 •100W Switching 130 x 130 1 3 0 x 130 BU 106 2N 5840 [N-P-N] 2N 5240 [N-P-N] BU 106 Va o sus =l40V hFE.:8 ;"0) / 4 A

RCA 40872

Abstract: 40629 Transistor RCA 40852 rca 40594 RCA 40250 rca 40872 transistor 40872 rca RCA 40594 transistor RCA 411 RCA411
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

IPW60R045Cp 6R045

Abstract: 6r045 mosfet 6r045 IPW60R045CP sd 431 transistor JESD22 SP000067149 gs 431 transistor
Contextual Info: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: 6MBP150RTB060 600V / 150A 6 in one-package IPM-R3 series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

X608

Abstract: transistor ap 431 MAX608ESA Matsuo 501
Contextual Info: 19-0438; Rev 0; 9/95 A lilX I V M 5 V or Adjustable, Low -Voltage, Step-Up DC-DC C ontroller The MAX608 is ideal for two- and three-cell batterypow ered system s. An operating frequency of up to 300kHz allows use with small surface-mount com po­ nents. _ Features

rca 2n3055

Abstract: rca 40327 RCA 2N3055 transistor 2n3055 audio amplifier application note 2n3055 application note RCA 40636 transistor 40327 rca 2N3439 RCA 2N3055 transistor RCA 528
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . . f r t o 2 0 M H z . . . P y t o 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

GB50LA120UX

Contextual Info: GB50LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Ultrafast IGBT , 50 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227