TRANSISTOR 431 A Search Results

transistor w 431

Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
Contextual Info: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW

sd 431 transistor

Contextual Info: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in

SLA6023 driver schematic

Abstract: UDN2983A equivalent SMA4033 ULN2068LB STA431A STA458C UDN2580A udn darlington driver ic SLA4031 T02EB0
Contextual Info: POWER & DISPLAY DRIVERS 431 THRU 458, 4310 THRU 4391, 5022 THRU 6030, AND 8001 BRIDGE AND HALF-BRIDGE TRANSISTOR ARRAYS Part Number STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA5022 SMA6010 SLA6012 SMA6014 SLA6020 SLA6022

transistor AS 431

Abstract: 2501 OPTO 2501 optoisolator 250v capacitor 33k 121k 1kv capacitor 33K 1kv capacitor a 431 transistor 431 transistor transistor 2A T1 2A 250V
Contextual Info: MIC4043 Micrel MIC4043 Low-Voltage Secondary-Side Shunt Regulator Final Information General Description Features The MIC4043 is a shunt regulator optimized for secondaryside regulation in low-voltage power supplies. Featuring an output stage guaranteed to swing within 400mV of ground,

Transistor PJ 431

Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB
Contextual Info: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 | Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue

ZTX108B

Abstract: ZR431 431 regulator 431 sot23 h a 431 transistor ic 431 ZR431Q1 capacitor c1 220uF 108B BAS21
Contextual Info: Application Note 27 Issue 1 June 1996 ZR431 Application Note David Bradbury The ZR431 is an enhanced version of the industry standard 431. It is a three terminal shunt regulator giving excellent temperature stability and the capability of operating at currents from 50µA up

cadstar pcb

Abstract: cadstar shape synario cadstar ALLEGRO PART NUMBER INDEX
Contextual Info: Synario ECS and Board Entry Index A Allegro Add symbol attributes . 3-38 Adding a netlister to a menu . 3-28, 3-41, 3-42 Allegro ECO Changes . 3-49

TFK u 116

Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
Contextual Info: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW

PH0810-35

Abstract: Transistor c54 F1 J37 transistor 431 N cl 740
Contextual Info: = an AMP - company Wireless Bipolar Power Transistor, 850 - 960 MHz 35W PH081 o-35 Features Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration

Contextual Info: N AMER PHILIPS/DISCRETE 0inE D ^53*131 0D1S5A7 □ RZB12250Y r- %-*>'- s' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.

buz349

Contextual Info: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: Standard ICs 6-channel high current driver BA664 The BA664 is an 1C with a built-in clamp diode, developed for the purpose of minimizing attachments, and contains a Darlington transistor array of six circuits with input resistance. Input and output are directed in the same direction

S 170 MOSFET TRANSISTOR

Abstract: transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950
Contextual Info: CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this

ESM5045D

Contextual Info: N AMER P H IL IP S /D IS C R E T E b'lE ]> bbS3T31 0D2flb0b 053 H A P X ESM5045D V _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives,

NE582N

Abstract: 75494 NE582
Contextual Info: NE582-N PIN CONFIGURATION DESCRIPTION The NE582 is a general interface device comprising a high current output transistor and drive circu itry in each of 6 elements. Each output transistor is individually capa­ ble o f sinking 400mA with a typical satura­

r1c diode

Abstract: Zener Diodes with small tolerances manufacturer R2C Zener r1p 11 TRANSISTOR h a 431 transistor precision shunt regulator 431 431 regulator AN58 AN59 E192
Contextual Info: A Product Line of Diodes Incorporated AN58 Designing with References - Shunt regulation Peter Abiodun A. Bode, Snr. Applications Engineer, Diodes Incorporated Introduction This application note introduces shunt regulators, sometimes called "reference diodes", "3terminal voltage references", or "adjustable voltage references". Using worked examples we

sd 431 transistor

Abstract: h a 431 transistor
Contextual Info: TA8428K 1.5A FuLL b r id g e d r iv e r . Unit in mm TA8428K is Full Bridge Driver IC for Brush Motor Rotation Control that has current capability of up to 1.5A AVE . Thermal Shutdown and Short Current Protector are provided. . 1.5A MAX (AVE) Full Bridge Driver

loop control TL431

Abstract: u116 Unitrode DN photo coupler application note 431 regulator
Contextual Info: DN-32 Design Note OPTOCOUPLER FEEDBACK DRIVE TECHNIQUES The use of optocouplers in the feedback path of switch­ mode power supplies is probably one of the most com­ mon practices in the industry. Benefits of this method include low component cost, high voltage isolation and

Contextual Info: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

STK392-040

Contextual Info: I Ordering number: EN 5170 Thick Film Hybrid IC J SA\YO STK392-110 No. 5170 3-Channel Convergence Correction Circuit lc max = 3A i Overview Package Dimensions The STK392-110 is a convergence correction circuit IC for video projectors. It incorporates three output amplifiers

bc 540

Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0

bry39

Abstract: BRY39 circuit
Contextual Info: N AMER PHILIPS/MSCRETE bTE 3> bb53R31 0057635 R6T Philips Semiconductors Data sheet status Preliminary specification date of Issue December 1990 BRY39 Programmable unijunction transistor QUICK REFERENCE DATA PARAMETER PIN cathode 2 cathode gate 3 anode gate

PL 431 transistor

Contextual Info: Philips Semiconductors • bb53^31 OOS'lObM 157 M A P X Product specification UHF linear push-pull power transistor “ BLV58 N AMER PHILIPS/DISCRETE FEATURES • High power gain D "- ■ QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

Contextual Info: flP3Sb05 o o a i s b 2 m a • ■ SIEMENS PROFET BTS 542 E2 Smart Highside Power Switch Features Product Summary • • • • • • • • Overvoltage protection Vbb AZ Operating voltage On-state resistance Load current (ISO) Vbb(on) /L(ISO) 18 m n