TRANSISTOR 42-10A 3 PIN Search Results

RR2p-Ul

Abstract: RR2P-U ac240v RR2P-U relay 240v 10a circuits RR3B-UL DC24V SR2P-05C 5V 1A DPDT RELAY rectification failure relay Idec rr2ba-u Y778
Contextual Info: Relays & Sockets RR Switches & Pilot Lights RR Series Power Relays Key features: • SPDT through 3PDT, 10A contacts • Midget power type relays • Available in pin and blade terminal styles. • Options include an indicator, check button for test operations and side flange.

RR2P-U

Abstract: RR3PA-UL RR3B-UL RR3B-UL DC24V RR3PA-UL Idec rr2ba-u SR3P-511 rectification failure relay relay 240v 7a relay 240v 10a circuits IDEC rr2p-u
Contextual Info: Relays & Sockets RR Series Switches & Pilot Lights RR Series Power Relays SPDT through 4PDT, 10A contacts Midget power type relays • Available in pin and blade terminal styles. • Options include an indicator, check button for test operations and side flange.

Contextual Info: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • P-channel Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)

Contextual Info: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)

Contextual Info: ACE1632B N-Channel Enhancement Mode Field Effect Transistor Description ACE1613B uses advanced trench technology to provide excellent RDS ON . This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power

Contextual Info: Single N-channel MOSFET ELM32408LA-S •General description ■Features ELM32408LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=10A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)

c 3421 transistor

Abstract: 010-0041 IC350 power IGBT HTGB MSAGA11F120D
Contextual Info: MSAGA11F120D WAFER LOT EVALUATION INTERNAL PROCESS SPECIFICATION IPS REV. 0, Approval _N/C_ QC LOT#:_ LOT DATE CODE:_ QUANTITY ISSUED:_ QUANTITY REQUIRED:_ SUMMARY MICROSEMI MSAGA11F120D data sheet REVISION:

MIL-PRF-39016

Abstract: cecc 16101 HI-G RELAYS relay 5a dpdt transistor C 548 B MIL-PRF-28776 dpdt 2bcn RELAY SPDT b mgad
Contextual Info: GENERAL INFORMATION SELECTOR CHART Contacts Series MA MA2 MCA MS MS2 1MA 1MA1 1MS 1MS1 MGA MGAE MGA2 MGS MGSE MGS2 I2K 2K 2K6600 Series Types MA MA-D MA-DD MA-T MS MS-D MS-DD MS-T 1MA 1MA-D 1MA-DD 1MA-T 1MS 1MS-D 1MS-DD 1MS-T Enclosure TO-5 TO-5 TO-5 TO-5

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it

RFHA1023

Abstract: SEMICONDUCTOR J598
Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2855 PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions

Contextual Info: Single N-channel MOSFET ELM32408LA-S •General description ■Features ELM32408LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=10A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)

Contextual Info: Single P-channel MOSFET ELM32409LA-S •General description ■Features ELM32409LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-10A Rds(on) < 44mΩ (Vgs=-10V) Rds(on) < 68mΩ (Vgs=-4.5V)

SEMICONDUCTOR J598

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

c11cf

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

P5506BDG

Contextual Info: Single N-channel MOSFET ELM32400LA-S •General description ■Features ELM32400LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=10A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)

Contextual Info: Single N-channel MOSFET ELM32418LA-S •General description ■Features ELM32418LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=20A Rds(on) < 15mΩ (Vgs=10V) Rds(on) < 27mΩ (Vgs=7V)

Contextual Info: ISO-9001 CERTIFIED BY DESC H-BRIDGE MOSFET POWER MODULE M .S .K E N N E D Y CO RP. 3004 315 699-9201 8 1 7 0 Thompson Road Cicero, N.Y. 13039 FEATURES: • • • • • Pin Compatible with M P M 3 00 4 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

BTC 139

Abstract: BTC1510T3
Contextual Info: CYStech Electronics Corp. Spec. No. : C652T3 Issued Date : 2003.09.30 Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510T3 Description The BTC1510T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.

C1510

Abstract: transistor c1510 BTC1510T3
Contextual Info: CYStech Electronics Corp. Spec. No. : C652T3 Issued Date : 2003.09.30 Revised Date :2006.05.24 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510T3 Description The BTC1510T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed

C1510

Abstract: transistor c1510 BTC1510F3 TO-263CB
Contextual Info: Spec. No. : C652F3 Issued Date : 2004.09.07 Revised Date :2006.06.02 Page No. : 1/4 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTC1510F3 Description The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed

C1510

Abstract: ic 4047 datasheet BTC1510E3 transistor c1510 IC 4047
Contextual Info: CYStech Electronics Corp. Spec. No. : C652E3 Issued Date : 2004.02.01 Revised Date : 2006.05.24 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510E3 Description The BTC1510E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed

Solar mppt circuit design

Abstract: 1000W inverter circuit design 10A MPPT Charger circuit 10A MPPT Charger inverter 500w 1000w inverter circuit modified sine wave MPPT 12v battery 24v Solar panel solar panel 500w sine wave inverter 500w circuit 24V lead acid battery charger circuit
Contextual Info: Modified Sine Wave DC-AC Inverter with MPPT Solar Charger ISI-500 series Features : High surge power up to 1000W Power ON-OFF switch Protections: Bat. low alarm / Bat. low shutdown / Over temp. / Output short / Input polarity reverse / Over load High frequecny design