TRANSISTOR 42-10A 3 PIN Search Results

RR2p-Ul

Abstract: RR2P-U ac240v RR2P-U relay 240v 10a circuits RR3B-UL DC24V SR2P-05C 5V 1A DPDT RELAY rectification failure relay Idec rr2ba-u Y778
Contextual Info: Relays & Sockets RR Switches & Pilot Lights RR Series Power Relays Key features: • SPDT through 3PDT, 10A contacts • Midget power type relays • Available in pin and blade terminal styles. • Options include an indicator, check button for test operations and side flange.

Contextual Info: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)

Contextual Info: ACE1632B N-Channel Enhancement Mode Field Effect Transistor Description ACE1613B uses advanced trench technology to provide excellent RDS ON . This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power

Contextual Info: Single N-channel MOSFET ELM32408LA-S •General description ■Features ELM32408LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=10A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)

c 3421 transistor

Abstract: 010-0041 IC350 power IGBT HTGB MSAGA11F120D
Contextual Info: MSAGA11F120D WAFER LOT EVALUATION INTERNAL PROCESS SPECIFICATION IPS REV. 0, Approval _N/C_ QC LOT#:_ LOT DATE CODE:_ QUANTITY ISSUED:_ QUANTITY REQUIRED:_ SUMMARY MICROSEMI MSAGA11F120D data sheet REVISION:

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it

RFHA1023

Abstract: SEMICONDUCTOR J598
Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2855 PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions

Contextual Info: Single P-channel MOSFET ELM32409LA-S •General description ■Features ELM32409LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-10A Rds(on) < 44mΩ (Vgs=-10V) Rds(on) < 68mΩ (Vgs=-4.5V)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2855 PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR  DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions

SEMICONDUCTOR J598

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

c11cf

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

Contextual Info: Single N-channel MOSFET ELM32418LA-S •General description ■Features ELM32418LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=20A Rds(on) < 15mΩ (Vgs=10V) Rds(on) < 27mΩ (Vgs=7V)

BTC 139

Abstract: BTC1510T3
Contextual Info: CYStech Electronics Corp. Spec. No. : C652T3 Issued Date : 2003.09.30 Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510T3 Description The BTC1510T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.

c1510

Abstract: c1510 transistor BTC1510J3 transistor c1510
Contextual Info: CYStech Electronics Corp. Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2005.03.11 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510J3 Description The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed

transistor c1510

Abstract: BTC1510F3 C1510
Contextual Info: Spec. No. : C652F3 Issued Date : 2004.09.07 Revised Date : Page No. : 1/4 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTC1510F3 Description The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.

transistor c1510

Abstract: C652I3 BTC1510I3 C1510
Contextual Info: CYStech Electronics Corp. Spec. No. : C652I3 Issued Date : 2005.06.23 Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510I3 Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.

IC 4047

Abstract: IC 4047 BE transistor c1510 IC 4047 datasheet BTC1510E3 C1510
Contextual Info: CYStech Electronics Corp. Spec. No. : C652E3 Issued Date : 2004.02.01 Revised Date : 2004.06.03 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510E3 Description The BTC1510E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed

12V 5A rectifier

Contextual Info: PH26560 Series Preliminary POWER HYBRID 15A DUAL 1/2 H-BRIDGE DRIVERS DESCRIPTION FEATURES • 15A Drive Capability • 4 Drivers with Catch Rectifiers • Fast Switching Speeds ton =35nsec @lc =5A, Vcc =30V toff =300nsec @lc =5A, Vcc =30V • 100V Breakdown on

3020 transistor

Abstract: 4707 N Channel MOSFETs MPM3002 MPM3012 P channel MOSFET 10A schematic P-channel MOSFET 100V, 10 Amps p-channel power mosfet 14A S 170 MOSFET TRANSISTOR P-channel MOSFET 100V, 20 Amps
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

P-channel MOSFET 100V, 10 Amps

Abstract: 3020 transistor 4707 N Channel MOSFETs P-channel MOSFET 100V, 20 Amps 150 amp H-bridge Mosfet MPM3002 MPM3012 MSK3020 drive motor 10A with transistor P channel MOSFET 100V H-bridge Mosfet
Contextual Info: M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

3020 transistor

Abstract: P-channel MOSFET 100V, 20 Amps P-channel MOSFET 100V, 10 Amps 4707 N Channel MOSFETs drive motor 10A with transistor 14a 50v p-channel mosfet MPM3002 MPM3012 20 amp MOSFET transistor 100v P-Channel MOSFET
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

42ap

Abstract: BUW42A BUW42 BUW42P ISOWATT218 BUW42AP TO3 package RthJC BUW41A BUW42PFI 42PFI
Contextual Info: 735^537 oosaagq a • SGS-THOMSON S G S-THOMSON B U W 42/42P/42P F I B U W 4 2A /4 2A P /42 A P F I 3DE 3> HIGH VOLTAGË POWER SWITCH DESCRIPTION The BUW42/A, BUW42P/42AP and BUW42PFI/ APFI are silicon multiepitaxial mesa PNP transistors mounted respectively in TO-3 metal case, TO-218

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility