TRANSISTOR 4148 Search Results

agilent at41486

Abstract: AT-41486-TR1G AT-41486 nfO32 AT41486-TR1
Contextual Info: Agilent AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz Agilent’s AT-41486 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The

AT41485

Contextual Info: Thal H E W L E T T * mLfiM P A C K A R D Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41485 Features diate sized transistor with imped­ ances that are easy to match for low noise and moderate power applications. Applications include

AT-41486

Abstract: AT-41486-BLK AT-41486-TR1 AT-41486-BLKG
Contextual Info: AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41486 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41486 is housed in a low cost surface mount .085" diameter plastic package. The 4 micron

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

AT-41485

Abstract: agilent at41485 S parameters of 5.8 GHz transistor AT41485 NF50 S21E 16MSG Ghz dB transistor
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41485 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz • High Gain-Bandwidth

Contextual Info: What mLUM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz

RN50

Abstract: S parameters of 5.8 GHz transistor
Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41485 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz

Contextual Info: m AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor HEWLETT PACKARD Features • • • • • 86 Plastic Package Low Noise Figure:1.4 dB typical at 1.0 GHz 1.7 dB typical at 2.0 GHz High AssociatedGain: 18.0 dB typical at 1.0 GHz 13.0 dB typical at 2.0 GHz

Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT

Contextual Info: AVANTEK INC 20E » 0AVANTEK • lim iti» AT-41485 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 85 Plastic Package Features • • • • GD0b477 1 Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.7 dB typical at 2.0 GHz High Associated Gain: 18.5 dB typical at 1.0 GHz

AT-41486

Abstract: NF50 S21E AT41486 AT-41486-BLK AT-41486-TR1
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT

AT-41485

Abstract: NF50 S21E AT41485
Contextual Info: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41485 Features • Low Noise Figure: 1.4 dB Typical at 1.0␣ GHz 1.7 dB Typical at 2.0␣ GHz • High Associated Gain: 18.5 dB Typical at 1.0␣ GHz 13.5 dB Typical at 2.0␣ GHz • High Gain-Bandwidth

AT-41486

Abstract: AT-41486-BLK AT-41486-TR1 NF50 S21E Silicon Bipolar Transistor Hewlett-Packard
Contextual Info: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0␣ GHz 1.7 dB Typical at 2.0␣ GHz • High Associated Gain: 18.0 dB Typical at 1.0␣ GHz 13.0 dB Typical at 2.0␣ GHz • High Gain-Bandwidth

Contextual Info: AT-41485 Up to 6 GHz Low Noise Silicon Bipolar Transistor What H E W L E T T mLfim P A C K A R D 85 Plastic Package Features • • • • Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.7 dB typical at 2.0 GHz High Associated Gain: 18.5 dB typical at 1.0 GHz

1E80

Abstract: KSB772 KSD882 KSD985 PVK350 60V transistor npn 2a
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSD882 IME D 00D?tl1.3 | NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO -126 ' • Complement to KSB772 ABSOLUTE MAXIMUM RATINGS Ta= 25*C Characteristic Symbol ; Collector-Base Voltage Collector-Emitter Voltage

NDS9936

Abstract: Vi46 ab-1 national
Contextual Info: N at i o n a l tß May 1996 Semiconductor" NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

zener T 4148

Abstract: zener 1n 4148 1n 4148 zener diode RF154 zener 1n f154 749 MOSFET TRANSISTOR motorola Zener Diode 4148
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for linear large-signal output stages In the 2 .0 -1 0 0 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

PU1501

Abstract: PU4471 PU4135 PU7456 PU4000 PU4118 PU4128 apu4148 PU4444 PU3134
Contextual Info: Transistore Selection Guide by Applications and Functions IPower Transistor Arrays Series Name PU3000 Series Equivalent Circuit Package (No.) Equivalent Circuit I I I ^''''\_Structure A p p lic a tio n ^ ^ General Example (N P N ) TT 2 s 5 Low VcE(sat) PUA3000

CEPF640

Contextual Info: CEPF640/CEBF640 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V , 18A , RDS ON =180mΩ @VGS=10V Super high dense cell design for extremely low RDS(ON). D High power and current handling capability. TO-220 & TO-263 package. G D

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

Contextual Info: rrz SGS-THOMSON # f ¡L E O T @ « S T E A 2260 SWITCH MODE POWER SUPPLY PRIMARY CIRCUIT • POSITIVE AND NEGATIVE CURRENT UP TO 1,2A and - 2A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE POWER TRANSIS­ TOR ■ TW O LEVELS TRANSISTOR CURRENT LIMI­ TATION

c4100

Abstract: ic 4148 55FT TRANSISTOR 4148 UTV010 MJE 172
Contextual Info: UTV010 1 Watt, 20 Volts, Class A UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE The UTV 010 is a COMMON EMITTER transistor capable of providing 1 Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. Gold Metalization and Diffused Ballasting are used to provide high reliability and

4311 mosfet transistor

Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
Contextual Info: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.

B803A

Abstract: b-803a
Contextual Info: CEP803ALVCEB803AL March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 5 2 A , R ds o n =1 5m Q @ V g s =1 0V. RDS(ON)=25mfl @ V gs = 4 .5 V . • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability.