TRANSISTOR 404 Search Results

BSY59

Abstract: TRANSISTOR W 59
Contextual Info: BSY59 Not for new developm ent PNP Transistor for switching applications The transistor B S Y 59 is an epitaxial silicon planar PNP transistor in a plastic case 11 A 3 DIN 41869 SO T-25 . The transistor is especially designed for use as switch of medium speed as well as for universal application.

NEC 2403

Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

A 564 transistor

Abstract: 3181 R33 transistor A 564
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

transistor NEC D 587

Abstract: 3181 R33 transistor c 3181
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

TRANSISTOR 404

Abstract: 14005 SFT4959
Contextual Info: PRELIMINARY SFT4959 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 30mA 18 VOLTS PNP TRANSISTOR Designer's Data Sheet FEATURES: • • • • PNP Silicon Annular Transistor High Speed High Frequency

TR0011A

Abstract: Motorolla transistor replacement book 400mAdc
Contextual Info: PRELIMINARY SFT10000/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR DESIGNER'S DATA SHEET APPLICATION NOTES: SFT10000 Darlington Transistor is direct replacement of Motorolla

2n3439ua

Abstract: SFT343 SMD.22
Contextual Info: SFT3439S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 A /450 Volts NPN Switching Transistor DESIGNER’S DATA SHEET SMD.22 Features: • Switching Transistor

SFT1192

Contextual Info: SFT6800S.5 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2 A /500 Volts NPN switching Transistor DESIGNER’S DATA SHEET Features: SMD.5 • Switching Transistor

NPN 1.5 AMPS POWER TRANSISTOR

Abstract: SFT1192
Contextual Info: SFT6800S.5 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2 A /500 Volts NPN switching Transistor DESIGNER’S DATA SHEET Features: SMD.5 • Switching Transistor

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

JLN 2003

Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
Contextual Info: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

transistor 1211

Abstract: transistor su 312 transistor zo 109
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

2SA1646

Contextual Info: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,

SN 4931

Abstract: 2sc 3476 2SC 1885 SN 4931 N
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the

TD2400

Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

TPM4040

Abstract: ITT 1N4007 BALLAST MOTOROLA TRANSISTOR UO 112 1N4007 motorola rf Power Transistor 1N4007, ITT 1N4007 DC COMPONENTS tantal PACKAGE 1N4007 itt
Contextual Info: MOT OROL A SC XSTRS/R F 4bE D • f c>3t , 72S4 GO^Sa^M fi « f l O T h ~T=-3 3 ~ 3 -~ l MOTOROLA m SEM ICO NDUCTOR TECHNICAL DATA TPM 4040 The RF Line UHF Power Transistor The TPM4040 is an internally matched transistor in a push-pull package specially

transistor NEC B 617

Abstract: nec. 5.5 473
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

2sc 103 transistor

Abstract: transistor BD 430
Contextual Info: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in

automotive ignition tip162

Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —

MJE15020

Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment

BUS48AP

Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

486DX-CPU

Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling

Contextual Info: Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100 Rev.1.00 Dec 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance