TRANSISTOR 400 VOLTS Search Results

MDS400

Contextual Info: MDS400 400 Watts Pk, 45 Volts, 32µs, 2% Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold

K105 transistor

Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Contextual Info: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

UMIL10P

Contextual Info: R.3.070799 UMIL10P 10 Watts, 28 Volts, Class AB UHF Communications 100 – 400 MHz CASE OUTLINE 55FU Style 2 GENERAL DESCRIPTION The UMIL10P is a COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in

UMIL10P

Contextual Info: R.3.070799 UMIL10P 10 Watts, 28 Volts, Class AB UHF Communications 100 – 400 MHz ADVANCED RELEASE GENERAL DESCRIPTION CASE OUTLINE 55FU Style 2 The UMIL10P is a COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in

UMIL10

Contextual Info: UMIL 10 100 Watts, 28 Volts, Class AB Defcom 100 - 400 MHz GENERAL DESCRIPTION CASE OUTLINE The UMIL10 is a COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused resistors ensure

Contextual Info: UMIL 3 3 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz GENERAL DESCRIPTION CASE OUTLINE The UMIL3 is a COMMON EMITTER broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused resistors ensure

transistor UMIL100A

Abstract: UMIL100A
Contextual Info: UMIL 100A 100 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz GENERAL DESCRIPTION CASE OUTLINE The UMIL100A is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

UMIL100

Contextual Info: UMIL 100 100 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz GENERAL DESCRIPTION CASE OUTLINE The UMIL100 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

UMIL70

Contextual Info: UMIL 70 70 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz GENERAL DESCRIPTION CASE OUTLINE The UMIL70 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

UMIL60

Contextual Info: UMIL 60 60 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz GENERAL DESCRIPTION CASE OUTLINE The UMIL60 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

UMIL60

Contextual Info: UMIL 60 60 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz CASE OUTLINE GENERAL DESCRIPTION 55HW, Style 2 The UMIL60 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

BUW12

Abstract: BUW12A
Contextual Info: Ü&MOSPEC HIGH VOLTAGE POWER TRANSISTOR The BUW12 and BUW12A Type are a fast switching high voltage transistor,more specially intended for operating in industrial. NPN BUW12 FEATURES: BUW12A * Collector-Emitter Sustaining Voltage VCEO 3US = 400 V (Min.) - BUW12

8204NG

Abstract: GB8204 NGB8204N NGB8204NT4 NGB8204NT4G GB8204NG
Contextual Info: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

18n40b

Abstract: GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D
Contextual Info: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses

NT 407 F TRANSISTOR TO 220

Abstract: MOTOROLA TRANSISTOR T2 NT 407 F MOSFET TRANSISTOR MGP20N40CL 632 transistor motorola mosfet ignition coil NT 407 F TRANSISTOR
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

IRFF312

Abstract: IRFF313
Contextual Info: FUT HELD EFFECT POWER TRANSISTOR IRFF312,313 1.15 AMPERES 400, 350 VOLTS Rd S ON = 5.0 Í1 Preliminar/ This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRF72

Abstract: IRF732 IRF733
Contextual Info: FUT IRF732,733 4.5 AMPERES 400, 350 VOLTS RlDS ON = 1-5 ft HELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.

NGB8202NT4G

Abstract: NGB8202AN NGB8202ANT4G NGB8202N NGB8202A
Contextual Info: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

B8202

Abstract: b820 NGB8202N NGB8202NT4
Contextual Info: NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

g18n40

Abstract: NGD18N40CLBT4G 350VVGE NGD18N40A Direct fuel injection
Contextual Info: NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

8J28

Abstract: MS2441
Contextual Info: MS2441 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS Features • • • • • • • 1025 – 1150 MHz 50 VOLTS POUT = 400 WATTS GP = 6.5 dB MINIMUM 30:1 VSWR CAPABILITY INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The MS2441 is a silicon NPN power transistor designed

730A-04

Abstract: C82-04
Contextual Info: MOTOROLA O rder this docum ent by M OC8204/D SEMICONDUCTOR TECHNICAL DATA TO VDE UL CSA SETI ® SEMKO DEMKO NEMKO BABT Global Optoisolator 6-Pin DIP Optoisolators High Voltage Transistor Output 400 Volts MOC8204* MOC8205 MOC8206 [C TR = 20% Min] [C TR = 10% Min]

SEC IRF730

Abstract: FET IRF730 oni 350 D84DQ2 IRF730 irf731
Contextual Info: [ H IRF730,731 D84DQ2,Q1 f F 5.5 AMPERES 400, 350 VOLTS RDS ON = 10 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

NTE362

Contextual Info: NTE362 Silicon NPN Transistor RF Power Description: The NTE362 is designed for 7.0 to 15 volts, UHF large signal amplifier applications required in industrial and commercial FM equipment operating in the 400 to 960MHz range. Features: D D D D Specified 12.5 Volt, 470MHz Characteristics Power Output = 2.0 Watts