TRANSISTOR 3440 Search Results

2N3440

Abstract: j350 TRANSISTOR 2N3439 transistor 2N 3440 J350 transistor 3440 2N 3440 3439 1010J
Contextual Info: 2N3439 2N3440 NPN SILICON TRANSISTORS TRIPLE DIFFUSED MESA. TRANSISTORS SILICIUM, NPN MESA TRIPLE •DIFFUSES. - High voltage, high frequency response transistor Transistor haute tension à fréquence d'amplification élevée - High voltage, low current, switching applications

transistor C 2290

Abstract: td 1410 NP34N03HLD NP34N03ILD
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP34N03HLD,NP34N03ILD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION

C5750X7R1H106M

Abstract: 30RF35
Contextual Info: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 — 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1.

TRANSISTOR J601

Abstract: gp816 RF35 J2396 J249
Contextual Info: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

3440S

Abstract: 2N3440S hFE-10 G-2675
Contextual Info: 2N 3440S EPITAXIAL PLANAR NPN HIGH VOLTAGE AMPLIFIER The 2N 3440S is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, intended for high voltage sw itching and linear am plifier applications. The complementary PNP type is the 2N 5415S. ABSOLUTE MAXIMUM RATINGS

2N3440S

Contextual Info: 2N 3440S SILICON PLANAR NPN H IG H -V O LTA G E AM PLIFIER The 2N 3440S is a silicon planar epitaxial NPN transistor in Je d ecT O -39 metal case, intend­ ed fo r high voltage switching and linear am p lifie r applications. The com plementaryPNP type is 2N 5415S.

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET

5415S

Contextual Info: 2N 5415S SILICON PLANAR PNP H IG H - V O L T A G E A M P L IF IE R The 2N 5415S is a silicon planar epitaxial PNP transistor in Jed ecT O -39 metal case, intend­ ed fo r high voltage switching and linear am plifier applications. The com plementary NPN type is 2N 3440S.

Contextual Info: MOTOROLA Order this document by MHW7205C/D SEMICONDUCTOR TECHNICAL DATA The RF Line CATV Amplifier Module MHW7205C Features • • • • Specified for 77– and 110–Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology

226 35K capacitor

Abstract: MRF21120 z40 mosfet 226 35K capacitor 226 35K
Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110

motorola sps transistor

Abstract: MRF21010
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet

Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

CTB110

Abstract: MHW7292A XMD110
Contextual Info: MOTOROLA Order this document by MHW7292A/D SEMICONDUCTOR TECHNICAL DATA The RF Line CATV Amplifier Module MHW7292A Features • • • • Specified for 110–Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions

Contextual Info: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK ECL Pro SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143

AN211A

Abstract: AN215A AN721 MRF1517T1 J104 MOSFET capacitor 330
Contextual Info: MOTOROLA Order this document by MRF1517/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

L5N1

Contextual Info: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device

Contextual Info: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output

transistor L1A

Abstract: 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB
Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

transistor j352

Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

Contextual Info: rZ 7 SGS-THOMSON 2N3439 2N3440 Ä T # [MO gfô l[L[iera®*S SILICON NPN TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . NPN TRANSISTOR DESCRIPTION The 2N3439, 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial

Contextual Info: MOTOROLA Order this document by MRF9045M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045M MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device